Mais categorias de produtos

Transistores - Bipolar (BJT) - Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	TransistorType	Current-Collector(Ic)(Max)	Voltage-CollectorEmitterBreakdown(Max)	VceSaturation(Max)@IbIc	Current-CollectorCutoff(Max)	DCCurrentGain(hFE)(Min)@IcVce	Power-Max	Frequency-Transition	OperatingTemperature	MountingType
KSE210STU TRANS PNP 25V 5A TO126-3 Fairchild Semiconductor	3,266	-	RFQ	Ficha técnica	Bulk	-	Obsolete	PNP	5 A	25 V	1.8V @ 1A, 5A	100nA (ICBO)	45 @ 2A, 1V	15 W	65MHz	150°C (TJ)	Through Hole
BD239ATU TRANS NPN 60V 2A TO220-3 Fairchild Semiconductor	2,947	-	RFQ	Ficha técnica	Bulk	-	Obsolete	NPN	2 A	60 V	700mV @ 200mA, 1A	300µA	15 @ 1A, 4V	30 W	-	150°C (TJ)	Through Hole
TIP112 TRANS NPN DARL 100V 2A TO220-3 Fairchild Semiconductor	2,595	-	RFQ	Ficha técnica	Bulk	-	Active	NPN - Darlington	2 A	100 V	2.5V @ 8mA, 2A	2mA	1000 @ 1A, 4V	2 W	-	150°C (TJ)	Through Hole
2N5551TF 2N5551 - SMALL SIGNAL BIPOLAR TR Fairchild Semiconductor	3,882	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	600 mA	160 V	200mV @ 5mA, 50mA	50nA (ICBO)	80 @ 10mA, 5V	625 mW	100MHz	-55°C ~ 150°C (TJ)	Through Hole
BD436S TRANS PNP 32V 4A TO126-3 Fairchild Semiconductor	3,738	-	RFQ	Ficha técnica	Bulk	-	Active	PNP	4 A	32 V	500mV @ 200mA, 2A	100µA	40 @ 10mA, 5V	36 W	3MHz	150°C (TJ)	Through Hole
KSH44H11TF TRANS NPN 80V 8A TO252-3 Fairchild Semiconductor	3,044	-	RFQ	Ficha técnica	Bulk	-	Obsolete	NPN	8 A	80 V	1V @ 400mA, 8A	10µA	40 @ 4A, 1V	1.75 W	50MHz	150°C (TJ)	Surface Mount
KSD471ACYBU TRANS NPN 30V 1A TO92-3 Fairchild Semiconductor	2,491	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	1 A	30 V	500mV @ 100mA, 1A	100nA (ICBO)	120 @ 100mA, 1V	800 mW	130MHz	150°C (TJ)	Through Hole
KSD882YSTU TRANS NPN 30V 3A TO126-3 Fairchild Semiconductor	3,746	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	3 A	30 V	500mV @ 200mA, 2A	1µA (ICBO)	160 @ 1A, 2V	1 W	90MHz	-55°C ~ 150°C (TJ)	Through Hole
KSD560YTU TRANS NPN DARL 100V 5A TO220-3 Fairchild Semiconductor	3,257	-	RFQ	Ficha técnica	Bulk	-	Active	NPN - Darlington	5 A	100 V	1.5V @ 3mA, 3A	1µA (ICBO)	5000 @ 3A, 2V	1.5 W	-	150°C (TJ)	Through Hole
KSP13TA TRANS NPN DARL 30V 0.5A TO92-3 Fairchild Semiconductor	3,047	-	RFQ	Ficha técnica	Bulk	-	Active	NPN - Darlington	500 mA	30 V	1.5V @ 100µA, 100mA	100nA (ICBO)	10000 @ 100mA, 5V	625 mW	125MHz	150°C (TJ)	Through Hole
D45H8 TRANS PNP 60V 10A TO220-3 Fairchild Semiconductor	2,415	-	RFQ	Ficha técnica	Bulk	-	Obsolete	PNP	10 A	60 V	1V @ 400mA, 8A	10µA	40 @ 4A, 1V	2 W	40MHz	-55°C ~ 150°C (TJ)	Through Hole
BUT11 TRANS NPN 400V 5A TO220-3 Fairchild Semiconductor	3,077	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	5 A	400 V	1.5V @ 600mA, 3A	1mA	-	100 W	-	150°C (TJ)	Through Hole
FJE5304DTU TRANS NPN 400V 4A TO126-3 Fairchild Semiconductor	2,346	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	4 A	400 V	1.5V @ 500mA, 2.5A	100µA	8 @ 2A, 5V	30 W	-	-	Through Hole
BSR18A TRANS PNP 40V 0.2A SOT23-3 Fairchild Semiconductor	3,810	-	RFQ	Ficha técnica	Bulk	-	Obsolete	PNP	200 mA	40 V	400mV @ 5mA, 50mA	50nA (ICBO)	100 @ 10mA, 1V	350 mW	250MHz	-55°C ~ 150°C (TJ)	Surface Mount
2N6520TA TRANS PNP 350V 0.5A TO92-3 Fairchild Semiconductor	3,459	-	RFQ	Ficha técnica	Bulk	-	Active	PNP	500 mA	350 V	1V @ 5mA, 50mA	50nA (ICBO)	20 @ 50mA, 10V	625 mW	200MHz	150°C (TJ)	Through Hole
KS3302BU TRANS NPN 40V 0.2A TO92-3 Fairchild Semiconductor	2,161	-	RFQ		Bulk	-	Obsolete	NPN	200 mA	40 V	150mV @ 10mA, 100mA	-	-	-	-	-	Through Hole
FJAF4310OTU TRANS NPN 140V 10A TO3PF Fairchild Semiconductor	2,154	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	10 A	140 V	500mV @ 500mA, 5A	10µA (ICBO)	70 @ 3A, 4V	80 W	30MHz	150°C (TJ)	Through Hole
BD240B TRANS PNP 80V 2A TO220-3 Fairchild Semiconductor	3,967	-	RFQ	Ficha técnica	Bulk	-	Obsolete	PNP	2 A	80 V	700mV @ 200mA, 1A	300µA	15 @ 1A, 4V	30 W	-	150°C (TJ)	Through Hole
FJP5304DTU TRANS NPN 400V 4A TO220-3 Fairchild Semiconductor	2,034	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	4 A	400 V	1.5V @ 500mA, 2.5A	250mA	8 @ 2A, 5V	70 W	-	-	Through Hole
KSP42TA TRANS NPN 300V 0.5A TO92-3 Fairchild Semiconductor	3,233	-	RFQ	Ficha técnica	Bulk	-	Active	NPN	500 mA	300 V	500mV @ 2mA, 20mA	100nA (ICBO)	40 @ 30mA, 10V	625 mW	50MHz	150°C (TJ)	Through Hole