Transistores - FETs, MOSFETs - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
PMV280ENEA,215

PMV280ENEA,215

1.1A, 100V, N CHANNEL, SILICON

Nexperia USA Inc.
2,957 -

RFQ

PMV280ENEA,215

Ficha técnica

Bulk * Active - - - - - - - - - - -
PMV65XPEA,215

PMV65XPEA,215

2.8A, 20V, P CHANNEL, SILICON, M

Nexperia USA Inc.
3,780 -

RFQ

PMV65XPEA,215

Ficha técnica

Bulk * Active - - - - - - - - - - -
2SK3355-S-AZ

2SK3355-S-AZ

SWITCHING N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,027 -

RFQ

2SK3355-S-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - -
MAX620EJN/R70564

MAX620EJN/R70564

QUAD, HIGH-SIDE MOSFET DRIVER

Analog Devices Inc./Maxim Integrated
2,796 -

RFQ

Bulk * Active - - - - - - - - - - -
BUK7230-55A

BUK7230-55A

PFET, 38A I(D), 55V, 0.003OHM, 1

NXP USA Inc.
3,898 -

RFQ

BUK7230-55A

Ficha técnica

Bulk * Active - - - - - - - - - - -
IRF7807ZPBFPRO

IRF7807ZPBFPRO

HEXFET N-CHANNEL POWER MOSFET

International Rectifier
3,103 -

RFQ

Bulk * Active - - - - - - - - - - -
IPP60R380E6

IPP60R380E6

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,822 -

RFQ

IPP60R380E6

Ficha técnica

Bulk * Active - - - - - - - - - - -
IPI60R165CP

IPI60R165CP

COOLMOS N-CHANNEL POWER MOSFET

Infineon Technologies
3,800 -

RFQ

IPI60R165CP

Ficha técnica

Bulk * Active - - - - - - - - - - -
FDBL86210

FDBL86210

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,534 -

RFQ

Bulk * Active - - - - - - - - - - -
SP8M21HZGTB

SP8M21HZGTB

45V DUAL NCH+PCH POWER MOSFET. S

Rohm Semiconductor
2,268 -

RFQ

SP8M21HZGTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N and P-Channel Standard 45V 6A (Ta), 4A (Ta) 25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V 2.5V @ 1mA 21.6nC @ 5V, 28nC @ 5V 1400pF @ 10V, 2400pF @10V 2W (Ta) 150°C (TJ) Surface Mount
2SK3483-Z-E2-AZ

2SK3483-Z-E2-AZ

N-CHANNEL POWER MOSFET SWITCHING

Renesas Electronics America Inc
2,741 -

RFQ

2SK3483-Z-E2-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - -
IPA60R280E6

IPA60R280E6

600V 0.28OHM N-CHANNEL MOSFET

Infineon Technologies
2,902 -

RFQ

IPA60R280E6

Ficha técnica

Bulk * Active - - - - - - - - - - -
FCI17N60

FCI17N60

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,285 -

RFQ

Bulk * Active - - - - - - - - - - -
SSM6N37FE,LM

SSM6N37FE,LM

MOSFET 2N-CH 20V 0.25A 2-2N1D

Toshiba Semiconductor and Storage
2,719 -

RFQ

SSM6N37FE,LM

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active 2 N-Channel (Dual) Logic Level Gate 20V 250mA 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 150mW 150°C (TJ) Surface Mount
DMN31D5UDJ-7

DMN31D5UDJ-7

MOSFET BVDSS: 25V 30V SOT963 T&R

Diodes Incorporated
2,740 -

RFQ

DMN31D5UDJ-7

Ficha técnica

Tape & Reel (TR) * Active - - - - - - - - - - -
DMN33D8LDWQ-13

DMN33D8LDWQ-13

MOSFET BVDSS: 25V~30V SOT363 T&R

Diodes Incorporated
3,543 -

RFQ

DMN33D8LDWQ-13

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 Active 2 N-Channel (Dual) Standard 30V 250mA (Ta) 2.4Ohm @ 250mA, 10V 1.5V @ 100µA 1.23nC @ 10V 48pF @ 5V 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMN32D4SDW-13

DMN32D4SDW-13

MOSFET 2N-CH 30V 0.65A SOT363

Diodes Incorporated
3,493 -

RFQ

DMN32D4SDW-13

Ficha técnica

Tape & Reel (TR) - Active 2 N-Channel (Dual) Standard 30V 650mA 400mOhm @ 250mA, 10V 1.6V @ 250µA 1.3nC @ 10V 50pF @ 15V 290mW -55°C ~ 150°C (TJ) Surface Mount
DMN62D0UDW-13

DMN62D0UDW-13

MOSFET 2N-CH 60V 0.35A SOT363

Diodes Incorporated
2,839 -

RFQ

DMN62D0UDW-13

Ficha técnica

Tape & Reel (TR) - Active 2 N-Channel (Dual) Standard 60V 350mA 2Ohm @ 100mA, 4.5V 1V @ 250µA 0.5nC @ 4.5V 32pF @ 30V 320mW -55°C ~ 150°C (TJ) Surface Mount
DMP2110UFDB-7

DMP2110UFDB-7

MOSFET BVDSS: 8V~24V U-DFN2020-6

Diodes Incorporated
3,715 -

RFQ

DMP2110UFDB-7

Ficha técnica

Tape & Reel (TR) - Active 2 P-Channel (Dual) Standard 20V 3.2A (Ta) 75mOhm @ 2.8A, 4.5V 1V @ 250µA 12.7nC @ 8V 443pF @ 10V 820mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMC2053UFDB-7

DMC2053UFDB-7

MOSFET BVDSS: 8V~24V U-DFN2020-6

Diodes Incorporated
2,058 -

RFQ

DMC2053UFDB-7

Ficha técnica

Tape & Reel (TR) - Active N and P-Channel Complementary Standard 20V 4.6A (Ta), 3.1A (Ta) 35mOhm @ 5A, 4.5V, 75mOhm @ 3.5A, 4.5V 1V @ 250µA 7.7nC @ 10V, 12.7nC @ 8V 369pF @ 10V, 440pF @ 10V 820mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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