Transistores - FETs, MOSFETs - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
APTMC120TAM12CTPAG

APTMC120TAM12CTPAG

MOSFET 6N-CH 1200V 220A SP6P

Microchip Technology
3,777 -

RFQ

APTMC120TAM12CTPAG

Ficha técnica

Bulk - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 220A (Tc) 12mOhm @ 150A, 20V 2.4V @ 30mA (Typ) 483nC @ 20V 8400pF @ 1000V 925W -40°C ~ 150°C (TJ) Chassis Mount
APTMC120HM17CT3AG

APTMC120HM17CT3AG

POWER MODULE - SIC MOSFET

Microchip Technology
3,937 -

RFQ

APTMC120HM17CT3AG

Ficha técnica

Bulk - Active 4 N-Channel Silicon Carbide (SiC) 1200V (1.2kV) 147A (Tc) 17mOhm @ 100A, 20V 4V @ 30mA 332nC @ 5V 5576pF @ 1000V 750W -40°C ~ 175°C (TJ) Chassis Mount
APTMC120HR11CT3AG

APTMC120HR11CT3AG

POWER MODULE - SIC MOSFET

Microchip Technology
2,443 -

RFQ

APTMC120HR11CT3AG

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 26A (Tc) 98mOhm @ 20A, 20V 3V @ 5mA 62nC @ 20V 950pF @ 1000V 125W -40°C ~ 150°C (TJ) Chassis Mount
APTMC120HRM40CT3AG

APTMC120HRM40CT3AG

POWER MODULE - SIC MOSFET

Microchip Technology
2,402 -

RFQ

APTMC120HRM40CT3AG

Ficha técnica

Bulk - Active 2 N-Channel (Dual) Silicon Carbide (SiC) 1200V (1.2kV) 73A (Tc) 34mOhm @ 50A, 20V 3V @ 12.5mA 161nC @ 5V 2788pF @ 1000V 375W -40°C ~ 150°C (TJ) Chassis Mount
APTMC120TAM34CT3AG

APTMC120TAM34CT3AG

POWER MODULE - SIC MOSFET

Microchip Technology
2,681 -

RFQ

APTMC120TAM34CT3AG

Ficha técnica

Bulk - Active 6 N-Channel (3-Phase Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 74A (Tc) 34mOhm @ 50A, 20V 4V @ 15mA 161nC @ 5V 2788pF @ 1000V 375W -40°C ~ 175°C (TJ) Chassis Mount
MSCMC120AM02CT6LIAG

MSCMC120AM02CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,860 -

RFQ

MSCMC120AM02CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 742A (Tc) 2.85mOhm @ 600A, 20V 4V @ 180mA 1932nC @ 20V 33500pF @ 1000V 3200W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCMC120AM04CT6LIAG

MSCMC120AM04CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
3,827 -

RFQ

MSCMC120AM04CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 388A (Tc) 5.7mOhm @ 300A, 20V 4V @ 90mA 966nC @ 20V 16700pF @ 1000V 1754W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCMC120AM03CT6LIAG

MSCMC120AM03CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,555 -

RFQ

MSCMC120AM03CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 631A (Tc) 3.4mOhm @ 500A, 20V 4V @ 150mA 1610nC @ 20V 27900pF @ 1000V 2778W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCMC90AM12C3AG

MSCMC90AM12C3AG

PM-MOSFET-SIC-SBD~-SP3F

Microchip Technology
3,293 -

RFQ

MSCMC90AM12C3AG

Ficha técnica

Tube - Active - - 900V 110A (Tc) - - - - - - Chassis Mount
MSCMC120AM07CT6LIAG

MSCMC120AM07CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,800 -

RFQ

MSCMC120AM07CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 264A (Tc) 8.7mOhm @ 240A, 20V 4V @ 60mA 690nC @ 20V 11400pF @ 1000V 1350W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCMC170AM08CT6LIAG

MSCMC170AM08CT6LIAG

PM-MOSFET-SIC-SBD~-SP6C LI

Microchip Technology
2,123 -

RFQ

MSCMC170AM08CT6LIAG

Ficha técnica

Tube - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1700V (1.7kV) 280A (Tc) 11.7mOhm @ 300A, 20V 4V @ 108mA 1128nC @ 20V 22000pF @ 1000V 1780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
MSCSM120AM042T6AG

MSCSM120AM042T6AG

PM-MOSFET-SIC-SP6C

Microchip Technology
2,651 -

RFQ

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 18mA 1392nC @ 20V 18100pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) Chassis Mount
MSCSM120AM50T1AG

MSCSM120AM50T1AG

PM-MOSFET-SIC-SP1F

Microchip Technology
2,145 -

RFQ

Bulk - Active 2 N Channel (Phase Leg) Silicon Carbide (SiC) 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) Chassis Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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