Transistores - FETs, MOSFETs - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType FETFeature DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs InputCapacitance(Ciss)(Max)@Vds Power-Max OperatingTemperature MountingType
ALD1115SAL

ALD1115SAL

MOSFET N/P-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,063 -

RFQ

ALD1115SAL

Ficha técnica

Tube - Active N and P-Channel Complementary Standard 10.6V - 1800Ohm @ 5V 1V @ 1µA - 3pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
SLA5096

SLA5096

MOSFET 3N/3P-CH 55V 8A 15-SIP

Sanken
3,620 -

RFQ

SLA5096

Ficha técnica

Tube - Active 3 N and 3 P-Channel (3-Phase Bridge) Standard 55V 8A - - - - - - Through Hole
SLA5059

SLA5059

MOSFET 3N/3P-CH 60V 4A 12-SIP

Sanken
3,912 -

RFQ

SLA5059

Ficha técnica

Tube - Active 3 N and 3 P-Channel (3-Phase Bridge) Logic Level Gate 60V 4A 550mOhm @ 2A, 4V 2V @ 250µA - 150pF @ 10V 5W 150°C (TJ) Through Hole
FDMD8440L

FDMD8440L

FET ENGR DEV-NOT REL

onsemi
2,698 -

RFQ

FDMD8440L

Ficha técnica

Tape & Reel (TR),Tape & Reel (TR) PowerTrench® Active 2 N-Channel (Dual) Standard 40V 21A (Ta), 87A (Tc) 2.6mOhm @ 21A, 10V 3V @ 250µA 62nC @ 10V 4150pF @ 20V 2.1W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SLA5212

SLA5212

MOSFET 6N-CH 35V 8A 15-SIP

Sanken
3,757 -

RFQ

SLA5212

Ficha técnica

Tube - Active 6 N-Channel Standard 35V 8A - - - - - - Through Hole
ALD110904SAL

ALD110904SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,688 -

RFQ

ALD110904SAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110800SCL

ALD110800SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.
2,172 -

RFQ

ALD110800SCL

Ficha técnica

Tube EPAD®, Zero Threshold™ Active 4 N-Channel, Matched Pair Standard 10.6V - 500Ohm @ 4V 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110908SAL

ALD110908SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,794 -

RFQ

ALD110908SAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110914SAL

ALD110914SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
3,453 -

RFQ

ALD110914SAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110808SCL

ALD110808SCL

MOSFET 4N-CH 10.6V 16SOIC

Advanced Linear Devices Inc.
2,885 -

RFQ

ALD110808SCL

Ficha técnica

Tube EPAD® Active 4 N-Channel, Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD114935SAL

ALD114935SAL

MOSFET 2N-CH 10.6V 8SOIC

Advanced Linear Devices Inc.
2,064 -

RFQ

ALD114935SAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD110902PAL

ALD110902PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,667 -

RFQ

ALD110902PAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD110904PAL

ALD110904PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
2,143 -

RFQ

ALD110904PAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
NTMFD5C650NLT1G

NTMFD5C650NLT1G

T6 60V LL S08FL DS

onsemi
3,711 -

RFQ

NTMFD5C650NLT1G

Ficha técnica

Tape & Reel (TR) - Active 2 N-Channel (Dual) Standard 60V 21A (Ta), 111A (Tc) 4.2mOhm @ 20A, 10V 2.2V @ 98µA 37nC @ 10V 2546pF @ 25V 3.5W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ALD111933PAL

ALD111933PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
2,129 -

RFQ

ALD111933PAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Standard 10.6V - 500Ohm @ 5.9V 3.35V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114904PAL

ALD114904PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,512 -

RFQ

ALD114904PAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 360mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD114913PAL

ALD114913PAL

MOSFET 2N-CH 10.6V 8DIP

Advanced Linear Devices Inc.
3,174 -

RFQ

ALD114913PAL

Ficha técnica

Tube EPAD® Active 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) Through Hole
ALD212900SAL

ALD212900SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.
3,331 -

RFQ

ALD212900SAL

Ficha técnica

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 20mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) Surface Mount
ALD212902PAL

ALD212902PAL

MOSFET 2N-CH 10.6V 0.08A 8DIP

Advanced Linear Devices Inc.
3,136 -

RFQ

ALD212902PAL

Ficha técnica

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Through Hole
ALD212902SAL

ALD212902SAL

MOSFET 2N-CH 10.6V 0.08A 8SOIC

Advanced Linear Devices Inc.
3,688 -

RFQ

ALD212902SAL

Ficha técnica

Tube EPAD®, Zero Threshold™ Active 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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