Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR420TRR

IRFR420TRR

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
2,357 -

RFQ

IRFR420TRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5305TRL

IRFR5305TRL

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
2,087 -

RFQ

IRFR5305TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305TRR

IRFR5305TRR

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
3,365 -

RFQ

IRFR5305TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505TRL

IRFR5505TRL

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,564 -

RFQ

IRFR5505TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5505TRR

IRFR5505TRR

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,723 -

RFQ

IRFR5505TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR6215TRL

IRFR6215TRL

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,926 -

RFQ

IRFR6215TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TR

IRFR6215TR

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,459 -

RFQ

IRFR6215TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR6215TRR

IRFR6215TRR

MOSFET P-CH 150V 13A DPAK

Infineon Technologies
3,517 -

RFQ

IRFR6215TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR9010TRL

IRFR9010TRL

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,208 -

RFQ

IRFR9010TRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9010TRR

IRFR9010TRR

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,489 -

RFQ

IRFR9010TRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014N

IRFR9014N

MOSFET P-CH 60V 5.1A DPAK

Infineon Technologies
3,821 -

RFQ

IRFR9014N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Surface Mount
IRFR9014NTRL

IRFR9014NTRL

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,637 -

RFQ

IRFR9014NTRL

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014NTR

IRFR9014NTR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
3,724 -

RFQ

IRFR9014NTR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014NTRR

IRFR9014NTRR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,707 -

RFQ

IRFR9014NTRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014TRR

IRFR9014TRR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
2,364 -

RFQ

IRFR9014TRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9020TRL

IRFR9020TRL

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
3,699 -

RFQ

IRFR9020TRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FK4B01120L1

FK4B01120L1

MOSFET N-CH 12V 3.9A ULGA004

Panasonic Electronic Components
972 -

RFQ

FK4B01120L1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 12 V 3.9A (Ta) 1.5V, 4.5V 24mOhm @ 1.5A, 4.5V 1V @ 394µA 7 nC @ 4.5 V ±8V 490 pF @ 10 V - 370mW (Ta) -40°C ~ 85°C (TA) Surface Mount
CSD22202W15

CSD22202W15

MOSFET P-CH 8V 10A 9DSBGA

Texas Instruments
535 -

RFQ

CSD22202W15

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) NexFET™ Active P-Channel MOSFET (Metal Oxide) 8 V 10A (Ta) 2.5V, 4.5V 12.2mOhm @ 2A, 4.5V 1.1V @ 250µA 8.4 nC @ 4.5 V -6V 1390 pF @ 4 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6690A

FDS6690A

MOSFET N-CH 30V 11A 8SOIC

onsemi
2,053 -

RFQ

FDS6690A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 12.5mOhm @ 11A, 10V 3V @ 250µA 16 nC @ 5 V ±20V 1205 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RTQ025P02HZGTR

RTQ025P02HZGTR

MOSFET P-CH 20V 2.5A TSMT6

Rohm Semiconductor
364 -

RFQ

RTQ025P02HZGTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 100mOhm @ 2.5A, 4.5V 2V @ 1mA 6.4 nC @ 4.5 V ±12V 580 pF @ 10 V - 950mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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