Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RM180N100T2

RM180N100T2

MOSFET N-CH 100V 180A TO220-3

Rectron USA
3,117 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 3mOhm @ 100A, 10V 4.5V @ 250µA - ±20V 1150 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM17N800TI

RM17N800TI

MOSFET N-CHANNEL 800V 17A TO220F

Rectron USA
2,580 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800T2

RM17N800T2

MOSFET N-CH 800V 17A TO220-3

Rectron USA
3,549 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM17N800HD

RM17N800HD

MOSFET N-CH 800V 17A TO263-2

Rectron USA
2,004 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Ta) 10V 320mOhm @ 8.5A, 10V 4V @ 250µA - ±30V 2060 pF @ 50 V - 260W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM21N650T7

RM21N650T7

MOSFET N-CHANNEL 650V 21A TO247

Rectron USA
2,977 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 21A (Tc) 10V 180mOhm @ 10.5A, 10V 3.5V @ 250µA - ±30V 1950 pF @ 50 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
RM150N150HD

RM150N150HD

MOSFET N-CH 150V 150A TO263-2

Rectron USA
2,906 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 7.2mOhm @ 70A, 10V 4V @ 250µA - ±20V 5500 pF @ 75 V - 320W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM45N600T7

RM45N600T7

MOSFET N-CH 600V 44.5A TO247

Rectron USA
2,208 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 44.5A (Tj) 10V 90mOhm @ 15.6A, 10V 4V @ 250µA - ±30V 2808 pF @ 100 V - 431W -55°C ~ 150°C (TJ) Through Hole
RM47N600T7

RM47N600T7

MOSFET N-CHANNEL 600V 47A TO247

Rectron USA
2,032 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tj) 10V 81mOhm @ 15.6A, 10V 4V @ 250µA - ±20V 3111.9 pF @ 25 V - 417W -55°C ~ 150°C (TJ) Through Hole
RM47N650T7

RM47N650T7

MOSFET N-CHANNEL 650V 47A TO247

Rectron USA
2,414 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tj) 10V 81mOhm @ 15.6A, 10V 4V @ 250µA - ±20V 3111.9 pF @ 25 V - 417W -55°C ~ 150°C (TJ) Through Hole
RM130N200T2

RM130N200T2

MOSFET N-CH 200V 132A TO220-3

Rectron USA
2,269 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 11mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
RM130N200HD

RM130N200HD

MOSFET N-CH 200V 132A TO263-2

Rectron USA
2,254 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 10.7mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RM130N200T7

RM130N200T7

MOSFET N-CHANNEL 200V 132A TO247

Rectron USA
2,809 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 132A (Tc) 10V 10.9mOhm @ 20A, 10V 4V @ 250µA - ±20V 4970 pF @ 100 V - 429W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 232 Record«Prev1... 89101112Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário