Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix
2,047 -

RFQ

SIDR5102EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 28.2A (Ta), 126A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2850 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIJA54ADP-T1-GE3

SIJA54ADP-T1-GE3

N-CHANNEL 40 V (D-S) MOSFET POWE

Vishay Siliconix
2,934 -

RFQ

SIJA54ADP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 35.4A (Ta), 126A (Tc) 4.5V, 10V 2.3mOhm @ 15A, 10V 2.5V @ 250µA 70 nC @ 10 V +20V, -16V 3850 pF @ 20 V - 5.2W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4434DY-T1-E3

SI4434DY-T1-E3

MOSFET N-CH 250V 2.1A 8SO

Vishay Siliconix
3,652 -

RFQ

SI4434DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.1A (Ta) 6V, 10V 155mOhm @ 3A, 10V 4V @ 250µA 50 nC @ 10 V ±20V - - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7178DP-T1-GE3

SI7178DP-T1-GE3

MOSFET N-CH 100V 60A PPAK SO-8

Vishay Siliconix
2,717 -

RFQ

SI7178DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 60A (Tc) 10V 14mOhm @ 10A, 10V 4.5V @ 250µA 72 nC @ 10 V ±20V 2870 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630PBF-BE3

IRF630PBF-BE3

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
2,110 -

RFQ

IRF630PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJQ186E-T1_GE3

SQJQ186E-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
3,525 -

RFQ

SQJQ186E-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 245A (Tc) 10V 2.3mOhm @ 20A, 10V 3.5V @ 250µA 185 nC @ 10 V ±20V 10552 pF @ 25 V - 357W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR5102DP-T1-RE3

SIR5102DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
3,517 -

RFQ

SIR5102DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 27A (Ta), 110A (Tc) 7.5V, 10V 4.1mOhm @ 20A, 10V 4V @ 250µA 51 nC @ 10 V ±20V 2850 pF @ 50 V - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR510EP-T1-RE3

SIDR510EP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix
3,161 -

RFQ

SIDR510EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 100 V 33A (Ta), 148A (Tc) 7.5V, 10V 3.6mOhm @ 20A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 4980 pF @ 50 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIHA15N60E-GE3

SIHA15N60E-GE3

N-CHANNEL 600V

Vishay Siliconix
2,627 -

RFQ

SIHA15N60E-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 280mOhm @ 8A, 10V 4V @ 250µA 76 nC @ 10 V ±30V 1350 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQJQ144AER-T1_GE3

SQJQ144AER-T1_GE3

AUTOMOTIVE N-CHANNEL 40 V (D-S)

Vishay Siliconix
2,534 -

RFQ

SQJQ144AER-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 40 V 575A (Tc) 10V 0.9mOhm @ 20A, 10V 3.5V @ 250µA 145 nC @ 10 V ±20V 9020 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR626DP-T1-RE3

SIDR626DP-T1-RE3

N-CHANNEL 60-V (D-S) MOSFET

Vishay Siliconix
2,052 -

RFQ

SIDR626DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 42.8A (Ta), 100A (Tc) 6V, 10V 1.7mOhm @ 20A, 10V 3.4V @ 250µA 102 nC @ 10 V ±20V 5130 pF @ 30 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR512DP-T1-RE3

SIR512DP-T1-RE3

N-CHANNEL 100 V (D-S) MOSFET POW

Vishay Siliconix
2,552 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 25.1A (Ta), 100A (Tc) 7.5V, 10V 4.5mOhm @ 20A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 3400 pF @ 50 V - 6W (Ta), 96.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJQ186ER-T1_GE3

SQJQ186ER-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix
3,400 -

RFQ

SQJQ186ER-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 329A (Tc) 10V 2.3mOhm @ 20A, 10V 3.5V @ 250µA 185 nC @ 10 V ±20V 10552 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR680DP-T1-RE3

SIDR680DP-T1-RE3

N-CHANNEL 80-V (D-S) MOSFET

Vishay Siliconix
3,070 -

RFQ

SIDR680DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 80 V 32.8A (Ta), 100A (Tc) 7.5V, 10V 2.9mOhm @ 20A, 10V 3.4V @ 250µA 105 nC @ 10 V ±20V 5150 pF @ 40 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR578EP-T1-RE3

SIDR578EP-T1-RE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix
3,693 -

RFQ

SIDR578EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 17.4A (Ta), 78A (Tc) 7.5V, 10V 8.8mOhm @ 20A, 10V 4V @ 250µA 49 nC @ 10 V ±20V 2540 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR668DP-T1-RE3

SIDR668DP-T1-RE3

N-CHANNEL 100-V (D-S) MOSFET

Vishay Siliconix
2,283 -

RFQ

SIDR668DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 23.2A (Ta), 95A (Tc) 7.5V, 10V 4.8mOhm @ 20A, 10V 3.4V @ 250µA 108 nC @ 10 V ±20V 5400 pF @ 50 V - 6.25W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIDR570EP-T1-RE3

SIDR570EP-T1-RE3

N-CHANNEL 150 V (D-S) 175C MOSFE

Vishay Siliconix
2,560 -

RFQ

SIDR570EP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen V Active N-Channel MOSFET (Metal Oxide) 150 V 30.8A (Ta), 90.9A (Tc) 7.5V, 10V 7.9mOhm @ 20A, 10V 4V @ 250µA 71 nC @ 10 V ±20V 3740 pF @ 75 V - 7.5W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIDR104AEP-T1-RE3

SIDR104AEP-T1-RE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix
3,480 -

RFQ

SIDR104AEP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 21.1A (Ta), 90.5A (Tc) 7.5V, 10V 6.1mOhm @ 15A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 3250 pF @ 50 V - 6.5W (Ta), 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7002K-T1-E3

2N7002K-T1-E3

MOSFET N-CH 60V 300MA SOT23-3

Vishay Siliconix
212,894 -

RFQ

2N7002K-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA 0.6 nC @ 4.5 V ±20V 30 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF644PBF-BE3

IRF644PBF-BE3

MOSFET N-CH 250V 14A TO220AB

Vishay Siliconix
3,800 -

RFQ

IRF644PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) - 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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