Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9610L

IRF9610L

MOSFET P-CH 200V 1.8A I2PAK

Vishay Siliconix
3,419 -

RFQ

IRF9610L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF9610STRL

IRF9610STRL

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix
3,033 -

RFQ

IRF9610STRL

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9610STRR

IRF9610STRR

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix
2,907 -

RFQ

IRF9610STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9620L

IRF9620L

MOSFET P-CH 200V 3.5A I2PAK

Vishay Siliconix
3,439 -

RFQ

IRF9620L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF9620STRL

IRF9620STRL

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,472 -

RFQ

IRF9620STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIUD403ED-T1-GE3

SIUD403ED-T1-GE3

MOSFET P-CH 20V 500MA PPAK 0806

Vishay Siliconix
115 -

RFQ

SIUD403ED-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.5V, 4.5V 1.25Ohm @ 300mA, 4.5V 900mV @ 250µA 1 nC @ 4.5 V ±8V 31 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4774DY-T1-GE3

SI4774DY-T1-GE3

MOSFET N-CHANNEL 30V 16A 8SO

Vishay Siliconix
131 -

RFQ

SI4774DY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 16A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.3V @ 1mA 14.3 nC @ 4.5 V ±20V 1025 pF @ 15 V Schottky Diode (Body) 5W (Tc) -55°C ~ 150°C (TA) Surface Mount
SI8465DB-T2-E1

SI8465DB-T2-E1

MOSFET P-CH 20V 4MICROFOOT

Vishay Siliconix
490 -

RFQ

SI8465DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 104mOhm @ 1.5A, 4.5V 1.5V @ 250µA 18 nC @ 10 V ±12V 450 pF @ 10 V - 780mW (Ta), 1.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI8824EDB-T2-E1

SI8824EDB-T2-E1

MOSFET N-CH 20V 2.1A MICROFOOT

Vishay Siliconix
188 -

RFQ

SI8824EDB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 2.1A (Ta) 1.2V, 4.5V 75mOhm @ 1A, 4.5V 800mV @ 250µA 6 nC @ 4.5 V ±5V 400 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9620STRR

IRF9620STRR

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,046 -

RFQ

IRF9620STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9630L

IRF9630L

MOSFET P-CH 200V 6.5A I2PAK

Vishay Siliconix
2,811 -

RFQ

IRF9630L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF9630STRL

IRF9630STRL

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
3,917 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9630STRR

IRF9630STRR

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
3,152 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9640L

IRF9640L

MOSFET P-CH 200V 11A I2PAK

Vishay Siliconix
2,009 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640STRR

IRF9640STRR

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
2,590 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z14L

IRF9Z14L

MOSFET P-CH 60V 6.7A I2PAK

Vishay Siliconix
2,923 -

RFQ

IRF9Z14L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z14STRL

IRF9Z14STRL

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
2,846 -

RFQ

IRF9Z14STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z14STRR

IRF9Z14STRR

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
3,462 -

RFQ

IRF9Z14STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL214TR

IRFL214TR

MOSFET N-CH 250V 790MA SOT223

Vishay Siliconix
3,471 -

RFQ

IRFL214TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 790mA (Tc) 10V 2Ohm @ 470mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL31N20D

IRFL31N20D

MOSFET N-CH 200V 31A D2PAK

Vishay Siliconix
3,042 -

RFQ

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Ta) - - - - - - - - - Surface Mount
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1500+ Média diária de RFQ
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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