+86 075582561136
Carregar BOM
Transistores - FETs, MOSFETs - Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
G16P03SP30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor |
8,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A | - | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
5N20AN200V,RD(MAX)<650M@10V,VTH1V~3V Goford Semiconductor |
4,977 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A | - | 650mOhm @ 2.5A, 10V | 3V @ 250µA | 10.8 nC @ 10 V | ±20V | 255 pF @ 25 V | - | 78W | -55°C ~ 150°C (TJ) | |
|
GT060N04D3N40V,RD(MAX)<6.5M@10V,RD(MAX)<10 Goford Semiconductor |
9,978 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1282 pF @ 20 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G30N04D3MOSFET N-CH 40V 30A DFN33-8L Goford Semiconductor |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 30A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 1780 pF @ 20 V | Standard | 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G26P04KP-40V,RD(MAX)<18M@-10V,RD(MAX)<2 Goford Semiconductor |
5,394 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 18mOhm @ 10A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | - | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
GT110N06SN60V,RD(MAX)<[email protected],RD(MAX)<1 Goford Semiconductor |
6,727 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4.5V, 10V | 11mOhm @ 14A, 10V | 2.4V @ 250µA | 24 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G29P15V,RD(MAX)<[email protected],RD(MAX)<4 Goford Semiconductor |
1,475 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A | - | 30mOhm @ 3A, 4.5V | 900mV @ 250µA | 12.5 nC @ 10 V | ±12V | 1151 pF @ 10 V | - | 1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G06P01EP12V,RD(MAX)<[email protected],RD(MAX)<4 Goford Semiconductor |
1,322 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4A (Tc) | 1.8V, 4.5V | 28mOhm @ 3A, 4.5V | 1V @ 250µA | 14 nC @ 4.5 V | ±10V | 1087 pF @ 6 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
25P06P60V,RD(MAX)<45M@-10V,VTH2V~3V T Goford Semiconductor |
4,860 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 45mOhm @ 12A, 10V | 3V @ 250µA | 37 nC @ 10 V | ±20V | 3384 pF @ 30 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G70P02KP15V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
2,704 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 70A (Tc) | 2.5V, 4.5V | 8.5mOhm @ 20A, 4.5V | 1.5V @ 250µA | 55 nC @ 4.5 V | ±12V | 3500 pF @ 10 V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G1003BN100V,RD(MAX)<170M@10V,RD(MAX)<1 Goford Semiconductor |
2,352 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A | - | 130mOhm @ 1A, 10V | 2V @ 250µA | 30 nC @ 10 V | ±20V | 760 pF @ 50 V | - | 3.3W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
45P40P40V,RD(MAX)<14M@-10V,VTH2V~3V T Goford Semiconductor |
9,690 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 45A (Tc) | 10V | 14mOhm @ 20A, 10V | 2.5V @ 250µA | 42 nC @ 10 V | ±20V | 2960 pF @ 20 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
18N20N 200V, RD(MAX)<0.16@10V,VTH1.0V Goford Semiconductor |
2,500 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | 18N20 | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tj) | 10V | 160mOhm @ 9A, 10V | 3V @ 250µA | 17.7 nC @ 10 V | ±30V | 836 pF @ 25 V | - | 65.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G10N03SN30V,RD(MAX)<12M@10V,RD(MAX)<16M Goford Semiconductor |
3,955 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Tc) | 4.5V, 10V | 12mOhm @ 6A, 10V | 2.5V @ 250µA | 17 nC @ 4.5 V | ±20V | 839 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G40P03KP-30V,RD(MAX)<9.5M@-10V,RD(MAX)< Goford Semiconductor |
447 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 9.5mOhm @ 15A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | - | - | 138W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G02P06P60V,RD(MAX)<190M@-10V,RD(MAX)<2 Goford Semiconductor |
1,495 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A | - | 190mOhm @ 1A, 10V | 2.5V @ 250µA | 11.3 nC @ 10 V | ±20V | 573 pF @ 30 V | - | 1.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
2302MOSFET N-CH 20V 4.3A SOT-23 Goford Semiconductor |
2,027 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 2.5V, 4.5V | 27mOhm @ 2.2A, 4.5V | 1.1V @ 250µA | 10 nC @ 4.5 V | ±10V | 300 pF @ 10 V | Standard | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G2014N20V,RD(MAX)<[email protected],RD(MAX)<11M Goford Semiconductor |
2,980 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 14A (Tc) | 2.5V, 10V | 7mOhm @ 5A, 10V | 900mV @ 250µA | 17.5 nC @ 4.5 V | ±12V | 1710 pF @ 10 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G2312N20V,RD(MAX)<18M@10V,RD(MAX)<20M Goford Semiconductor |
2,990 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5A | - | 18mOhm @ 4.2A, 10V | 1V @ 250µA | 11 nC @ 4.5 V | ±12V | 780 pF @ 10 V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
3400N30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor |
2,976 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A | - | 59mOhm @ 2.8A, 2.5V | 1.4V @ 250µA | 9.5 nC @ 4.5 V | ±12V | 820 pF @ 15 V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
