Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK624R5-30C

BUK624R5-30C

PFET, 90A I(D), 30V, 0.0075OHM

Nexperia USA Inc.
10,000 -

RFQ

BUK624R5-30C

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
IPP230N06L3G

IPP230N06L3G

N-CHANNEL POWER MOSFET

Infineon Technologies
9,620 -

RFQ

IPP230N06L3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4.5V, 10V 23mOhm @ 30A, 10V 2.2V @ 11µA 10 nC @ 4.5 V ±20V 1600 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFD20N03SM

RFD20N03SM

N-CHANNEL POWER MOSFET

Harris Corporation
8,441 -

RFQ

RFD20N03SM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 10V 25mOhm @ 20A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1150 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76107P3

HUF76107P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
8,400 -

RFQ

HUF76107P3

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 10.3 nC @ 10 V ±16V 315 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSC150N03LD

BSC150N03LD

N-CHANNEL POWER MOSFET

Infineon Technologies
8,000 -

RFQ

BSC150N03LD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9514-55A,127

BUK9514-55A,127

PFET, 73A I(D), 55V, 0.015OHM, 1

NXP USA Inc.
7,857 -

RFQ

BUK9514-55A,127

Ficha técnica

Tube TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 73A (Tc) 4.5V, 10V 13mOhm @ 25A, 10V 2V @ 1mA - ±10V 3307 pF @ 25 V - 149W (Tc) -55°C ~ 175°C (TJ) Through Hole
SI4822DY

SI4822DY

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
7,709 -

RFQ

SI4822DY

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 9.5mOhm @ 12.5A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2180 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISL9N318AD3ST

ISL9N318AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
7,500 -

RFQ

ISL9N318AD3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 18mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) Surface Mount
2SK2624LS

2SK2624LS

N-CHANNEL SILICON MOSFET

onsemi
7,443 -

RFQ

2SK2624LS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTD5N50

NTD5N50

N-CHANNEL POWER MOSFET

onsemi
7,050 -

RFQ

NTD5N50

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF621R

IRF621R

N-CHANNEL POWER MOSFET

Harris Corporation
6,837 -

RFQ

IRF621R

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 5A (Tc) 10V 800mOhm @ 2.5A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 450 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSB053N03LPG

BSB053N03LPG

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSB053N03LPG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 71A (Tc) 4.5V, 10V 5.3mOhm @ 30A, 10V 2.2V @ 250µA 29 nC @ 10 V ±20V 2700 pF @ 15 V - 2.3W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
RFD15N06LESM

RFD15N06LESM

N-CHANNEL POWER MOSFET

Harris Corporation
4,077 -

RFQ

RFD15N06LESM

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A - - - - - - - - - Surface Mount
BSO303SP

BSO303SP

P-CHANNEL POWER MOSFET

Infineon Technologies
3,363 -

RFQ

BSO303SP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB45N04S4L-08

IPB45N04S4L-08

N-CHANNEL POWER MOSFET

Infineon Technologies
3,000 -

RFQ

IPB45N04S4L-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFU221

IRFU221

N-CHANNEL POWER MOSFET

Harris Corporation
2,419 -

RFQ

IRFU221

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4.6A (Tc) 10V 800mOhm @ 2.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 330 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUK7511-55B,127

BUK7511-55B,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
2,208 -

RFQ

BUK7511-55B,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 11mOhm @ 25A, 10V 4V @ 1mA 37 nC @ 10 V ±20V 2604 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB052N04NG

IPB052N04NG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,989 -

RFQ

IPB052N04NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDD5N53TM

FDD5N53TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,970 -

RFQ

FDD5N53TM

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 530 V 4A (Tc) 10V 1.5Ohm @ 2A, 10V 5V @ 250µA 15 nC @ 10 V ±30V 640 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75321D3S

HUF75321D3S

MOSFET N-CH 55V 20A TO252AA

Fairchild Semiconductor
1,818 -

RFQ

HUF75321D3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 36mOhm @ 20A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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