Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTP140N055T2

IXTP140N055T2

MOSFET N-CH 55V 140A TO220AB

IXYS
3,447 -

RFQ

IXTP140N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 140A (Tc) 10V 5.4mOhm @ 50A, 10V 4V @ 250µA 82 nC @ 10 V ±20V 4760 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R125C7XKSA1

IPW65R125C7XKSA1

MOSFET N-CH 650V 18A TO247-3

Infineon Technologies
2,521 -

RFQ

IPW65R125C7XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 125mOhm @ 8.9A, 10V 4V @ 440µA 35 nC @ 10 V ±20V 1670 pF @ 400 V - 101W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB36NM60N

STB36NM60N

MOSFET N-CH 600V 29A D2PAK

STMicroelectronics
2,264 -

RFQ

STB36NM60N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 105mOhm @ 14.5A, 10V 4V @ 250µA 83.6 nC @ 10 V ±25V 2722 pF @ 100 V - 210W (Tc) 150°C (TJ) Surface Mount
AUIRFSA8409-7TRL

AUIRFSA8409-7TRL

MOSFET N-CH 40V 523A D2PAK

Infineon Technologies
3,758 -

RFQ

AUIRFSA8409-7TRL

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT12M80B

APT12M80B

MOSFET N-CH 800V 13A TO247

Microchip Technology
3,997 -

RFQ

APT12M80B

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 13A (Tc) 10V 800mOhm @ 6A, 10V 5V @ 1mA 80 nC @ 10 V ±30V 2470 pF @ 25 V - 335W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK31V60W,LVQ

TK31V60W,LVQ

MOSFET N-CH 600V 30.8A 4DFN

Toshiba Semiconductor and Storage
2,710 -

RFQ

TK31V60W,LVQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DTMOSIV Active N-Channel MOSFET (Metal Oxide) 600 V 30.8A (Ta) 10V 98mOhm @ 15.4A, 10V 3.7V @ 1.5mA 86 nC @ 10 V ±30V 3000 pF @ 300 V Super Junction 240W (Tc) 150°C (TJ) Surface Mount
SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3

MOSFET N-CH 650V 19.8A PPAK 8X8

Vishay Siliconix
675 -

RFQ

SIHH21N65EF-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 650 V 19.8A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 102 nC @ 10 V ±30V 2396 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOTL66608

AOTL66608

MOSFET N-CH 60V 73.5A/400A TOLLA

Alpha & Omega Semiconductor Inc.
6,037 -

RFQ

AOTL66608

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) AlphaSGT™ Active N-Channel MOSFET (Metal Oxide) 60 V 73.5A (Ta), 400A (Tc) 6V, 10V 0.85mOhm @ 20A, 10V 3.3V @ 250µA 300 nC @ 10 V ±20V 14200 pF @ 30 V - 8.3W (Ta), 500W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL0065N40

FDBL0065N40

MOSFET N-CH 40V 300A 8HPSOF

onsemi
1,412 -

RFQ

FDBL0065N40

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 300A (Tc) 10V 0.65mOhm @ 80A, 10V 4V @ 250µA 296 nC @ 10 V ±20V 15900 pF @ 25 V - 429W (Tj) -55°C ~ 175°C (TJ) Surface Mount
STH360N4F6-2

STH360N4F6-2

MOSFET N-CH 40V 180A H2PAK-2

STMicroelectronics
919 -

RFQ

STH360N4F6-2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) DeepGATE™, STripFET™ VI Obsolete N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.25mOhm @ 60A, 10V 4.5V @ 250µA 340 nC @ 10 V ±20V 17930 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH25N60N

FCH25N60N

MOSFET N-CH 600V 25A TO247-3

onsemi
243 -

RFQ

FCH25N60N

Ficha técnica

Tube SupreMOS™ Last Time Buy N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 126mOhm @ 12.5A, 10V 4V @ 250µA 74 nC @ 10 V ±30V 3352 pF @ 100 V - 216W (Tc) -55°C ~ 150°C (TJ) Through Hole
EPC2071

EPC2071

TRANS GAN 100V .0022OHM 21BMPD

EPC
4,832 -

RFQ

EPC2071

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eGaN® Active N-Channel GaNFET (Gallium Nitride) 100 V 64A (Ta) 5V 2.2mOhm @ 30A, 5V 2.5V @ 13mA 26 nC @ 5 V +6V, -4V 3931 pF @ 50 V - - -40°C ~ 150°C (TJ) Surface Mount
STP36N55M5

STP36N55M5

MOSFET N-CH 550V 33A TO220

STMicroelectronics
245 -

RFQ

STP36N55M5

Ficha técnica

Tube MDmesh™ V Obsolete N-Channel MOSFET (Metal Oxide) 550 V 33A (Tc) 10V 80mOhm @ 16.5A, 10V 5V @ 250µA 62 nC @ 10 V ±25V 2670 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
STF16N90K5

STF16N90K5

MOSFET N-CH 900V 15A TO220FP

STMicroelectronics
125 -

RFQ

STF16N90K5

Ficha técnica

Tube MDmesh™ DK5 Active N-Channel MOSFET (Metal Oxide) 900 V 15A (Tc) 10V 330mOhm @ 7.5A, 10V 5V @ 100µA 29.7 nC @ 10 V ±30V 1027 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP36N60M6

STP36N60M6

MOSFET N-CHANNEL 600V 30A TO220

STMicroelectronics
162 -

RFQ

STP36N60M6

Ficha técnica

Tube MDmesh™ M6 Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 99mOhm @ 15A, 10V 4.75V @ 250µA 44.3 nC @ 10 V ±25V 1960 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
STW19NM50N

STW19NM50N

MOSFET N-CH 500V 14A TO247-3

STMicroelectronics
377 -

RFQ

STW19NM50N

Ficha técnica

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 14A (Tc) 10V 250mOhm @ 7A, 10V 4V @ 250µA 34 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) 150°C (TJ) Through Hole
STW28NM60ND

STW28NM60ND

MOSFET N-CH 600V 23A TO247

STMicroelectronics
127 -

RFQ

STW28NM60ND

Ficha técnica

Tube FDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 150mOhm @ 11.5A, 10V 5V @ 250µA 62.5 nC @ 10 V ±25V 2090 pF @ 100 V - 190W (Tc) 150°C (TJ) Through Hole
STL21N65M5

STL21N65M5

MOSFET N-CH 650V 17A PWRFLAT HV

STMicroelectronics
1,813 -

RFQ

STL21N65M5

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 179mOhm @ 8.5A, 10V 5V @ 250µA 50 nC @ 10 V ±25V 1950 pF @ 100 V - 3W (Ta), 125W (Tc) 150°C (TJ) Surface Mount
IXFP34N65X2M

IXFP34N65X2M

MOSFET N-CH 650V 34A TO220

IXYS
2,166 -

RFQ

IXFP34N65X2M

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 100mOhm @ 17A, 10V 5V @ 1.5mA 56 nC @ 10 V ±30V 3230 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC360SMA120S

MSC360SMA120S

MOSFET SIC 1200 V 360 MOHM TO-26

Microchip Technology
210 -

RFQ

Tube - Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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