Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
P3M12080K3

P3M12080K3

SICFET N-CH 1200V 47A TO-247-3

PN Junction Semiconductor
148 -

RFQ

P3M12080K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) Through Hole
P3M12080K4

P3M12080K4

SICFET N-CH 1200V 47A TO-247-4

PN Junction Semiconductor
140 -

RFQ

P3M12080K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A 15V 96mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +21V, -8V - - 221W -55°C ~ 175°C (TJ) Through Hole
P3M06040K4

P3M06040K4

SICFET N-CH 650V 68A TO247-4

PN Junction Semiconductor
150 -

RFQ

P3M06040K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) Through Hole
P3M06300K3

P3M06300K3

SICFET N-CH 650V 9A TO-247-3

PN Junction Semiconductor
2,095 -

RFQ

P3M06300K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA (Typ) 904 nC @ 15 V +20V, -8V 338 pF @ 400 V - 38W -55°C ~ 175°C (TJ) Through Hole
P1H06300D8

P1H06300D8

GANFET N-CH 650V 10A DFN 8X8

PN Junction Semiconductor
2,534 -

RFQ

P1H06300D8

Ficha técnica

Tape & Reel (TR) - Active N-Channel GaNFET (Gallium Nitride) 650 V 10A 6V 1.3V @ 1mA - - +10V, -20V - - 55.5W -55°C ~ 150°C (TJ) Surface Mount
P3M173K0F3

P3M173K0F3

SICFET N-CH 1700V 1.97A TO-220F-

PN Junction Semiconductor
3,131 -

RFQ

P3M173K0F3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 1.97A 15V 3.6Ohm @ 0.25A, 15V 2.2V @ 1.5mA (Typ) - +19V, -8V - - 19W -55°C ~ 175°C (TJ) Through Hole
P3M171K0F3

P3M171K0F3

SICFET N-CH 1700V 5.5A TO-220F-3

PN Junction Semiconductor
2,880 -

RFQ

P3M171K0F3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 5.5A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 51W -55°C ~ 175°C (TJ) Through Hole
P3M12160K3

P3M12160K3

SICFET N-CH 1200V 19A TO-247-3

PN Junction Semiconductor
2,066 -

RFQ

P3M12160K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) Through Hole
P3M06120T3

P3M06120T3

SICFET N-CH 650V 29A TO-220-3

PN Junction Semiconductor
2,658 -

RFQ

P3M06120T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 29A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA (Typ) - +20V, -8V - - 153W -55°C ~ 175°C (TJ) Through Hole
P3M06060G7

P3M06060G7

SICFET N-CH 650V 44A TO-263-7

PN Junction Semiconductor
2,542 -

RFQ

P3M06060G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 44A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 159W -55°C ~ 175°C (TJ) Surface Mount
P3M06060L8

P3M06060L8

SICFET N-CH 650V 40A TOLL

PN Junction Semiconductor
2,700 -

RFQ

P3M06060L8

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 40A 15V 79mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Surface Mount
P3M12080G7

P3M12080G7

SICFET N-CH 1200V 32A TO-263-7

PN Junction Semiconductor
3,143 -

RFQ

P3M12080G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 32A 15V 96mOhm @ 20A, 15V 2.2V @ 30mA (Typ) - +19V, -8V - - 136W -55°C ~ 175°C (TJ) Surface Mount
P3M06025K4

P3M06025K4

SICFET N-CH 650V 97A TO247-4

PN Junction Semiconductor
3,905 -

RFQ

P3M06025K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 97A 15V 34mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +20V, -8V - - 326W -55°C ~ 175°C (TJ) Through Hole
P3M12040G7

P3M12040G7

SICFET N-CH 1200V 69A TO-263-7

PN Junction Semiconductor
3,985 -

RFQ

P3M12040G7

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 69A 15V 53mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +19V, -8V - - 357W -55°C ~ 175°C (TJ) Surface Mount
P3M12040K4

P3M12040K4

SICFET N-CH 1200V 63A TO-247-3

PN Junction Semiconductor
2,209 -

RFQ

P3M12040K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A 15V 48mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +21V, -8V - - 349W -55°C ~ 175°C (TJ) Through Hole
P3M12025K3

P3M12025K3

SICFET N-CH 1200V 113A TO-247-3

PN Junction Semiconductor
3,872 -

RFQ

P3M12025K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 113A 15V 35mOhm @ 50A, 15V 2.4V @ 17.7mA (Typ) - +21V, -10V - - 524W -55°C ~ 175°C (TJ) Through Hole
P3M17040K3

P3M17040K3

SICFET N-CH 1700V 73A TO-247-3

PN Junction Semiconductor
2,743 -

RFQ

P3M17040K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 73A 15V 60mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 536W -55°C ~ 175°C (TJ) Through Hole
P3M12017K4

P3M12017K4

SICFET N-CH 1200V 151A TO-247-4

PN Junction Semiconductor
2,100 -

RFQ

P3M12017K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 151A 15V 24mOhm @ 75A, 15V 2.5V @ 75mA (Typ) - +25V, -10V - - 789W -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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