Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NVBG060N090SC1

NVBG060N090SC1

MOSFET N-CH 900V 5.8/44A D2PAK-7

onsemi
3,944 -

RFQ

Tape & Reel (TR) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 900 V 5.8A (Ta), 44A (Tc) 15V 84mOhm @ 20A, 15V 4.3V @ 5mA 88 nC @ 15 V +19V, -10V 1800 pF @ 450 V - 3.6W (Ta), 211W (Tc) -55°C ~ 175°C (TJ) Surface Mount
APT1003RBLLG

APT1003RBLLG

MOSFET N-CH 1000V 4A TO247

Microchip Technology
2,513 -

RFQ

APT1003RBLLG

Ficha técnica

Tube POWER MOS 7® Active N-Channel MOSFET (Metal Oxide) 1000 V 4A (Tc) 10V 3Ohm @ 2A, 10V 5V @ 1mA 34 nC @ 10 V ±30V 694 pF @ 25 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
APT14F100S

APT14F100S

MOSFET N-CH 1000V 14A D3PAK

Microchip Technology
2,731 -

RFQ

APT14F100S

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 1000 V 14A (Tc) 10V 980mOhm @ 7A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 3965 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT86N30T

IXFT86N30T

MOSFET N-CH 300V 86A TO268

IXYS
2,117 -

RFQ

IXFT86N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 86A (Tc) 10V 43mOhm @ 500mA, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 860W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFT1342-E

SFT1342-E

-60 V, -12 A, 62 MILLI OHM SINGL

onsemi
26,939 -

RFQ

SFT1342-E

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 4V, 10V 62mOhm @ 6A, 10V 2.6V @ 1mA 26 nC @ 10 V ±20V 1150 pF @ 20 V - 15W (Tc) 150°C (TJ) Through Hole
FDFS2P753Z

FDFS2P753Z

POWER FIELD-EFFECT TRANSISTOR, 3

onsemi
14,025 -

RFQ

FDFS2P753Z

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 115mOhm @ 3A, 10V 3V @ 250µA 9.3 nC @ 10 V ±25V 455 pF @ 10 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AO3400-5.8A

AO3400-5.8A

MOSFET SOT-23 N Channel 30V

MDD
249,000 -

RFQ

AO3400-5.8A

Ficha técnica

Tape & Reel (TR) SOT-23 Active N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 3.3V, 4.5V 32mOhm @ 5.8A, 10V 1.2V @ 250µA 10.5 nC @ 15 V ±12V 630 pF @ 15 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
TIP42CTU-T

TIP42CTU-T

TRANS BJTS PNP 100V 6A TO220-3 T

Fairchild Semiconductor
458,000 -

RFQ

TIP42CTU-T

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA1902TE-T1-AT

UPA1902TE-T1-AT

UPA1902TE-T1-AT - N-CHANNEL MOS

Renesas
114,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 22mOhm @ 3.5A, 10V 2.5V @ 1mA 8 nC @ 5 V ±20V 780 pF @ 10 V - 200mW (Ta) 150°C Surface Mount
ECH8664R-TL-H

ECH8664R-TL-H

ECH8664R - N-CHANNEL POWER MOSFE

onsemi
21,000 -

RFQ

ECH8664R-TL-H

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2N7000

2N7000

MOSFET, TO-92, 60V, 0.2A, N, 0.3

Diotec Semiconductor
2,454 -

RFQ

2N7000

Ficha técnica

Strip - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 60 pF @ 25 V - 350mW (Ta) 150°C (TJ) Through Hole
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

Fairchild Semiconductor
90,000 -

RFQ

FDMA7628

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V ±8V 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HAT2202C-EL-E

HAT2202C-EL-E

HAT2202C-EL-E - SILICON N CHANNE

Renesas
48,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 40mOhm @ 1.5A, 4.5V 1.4V @ 1mA 6 nC @ 4.5 V ±12V 520 pF @ 10 V - 200mW 150°C Surface Mount
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

onsemi
33,687 -

RFQ

FDMA7628

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V ±8V 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
G10N03S

G10N03S

N30V,RD(MAX)<12M@10V,RD(MAX)<16M

Goford Semiconductor
3,955 -

RFQ

G10N03S

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 10A (Tc) 4.5V, 10V 12mOhm @ 6A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 839 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PJE8439_R1_00001

PJE8439_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,800 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 2.5V, 10V 4Ohm @ 500mA, 10V 2.5V @ 250µA 1.1 nC @ 4.5 V ±20V 51 pF @ 25 V - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NTDV20P06LT4G-VF01

NTDV20P06LT4G-VF01

PFET DPAK 60V 15.5A 130R

onsemi
2,963 -

RFQ

NTDV20P06LT4G-VF01

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Obsolete P-Channel MOSFET (Metal Oxide) 60 V 15.5A (Tc) 5V 150mOhm @ 7.5A, 5V 2V @ 250µA 26 nC @ 5 V ±20V 1190 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMFS4823NT1G-IRH1

NTMFS4823NT1G-IRH1

MOSFET N-CH 30V 5DFN

onsemi
2,036 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
FDZ451PZ-P

FDZ451PZ-P

MOSFET P-CH 20V 6WLCSP

onsemi
3,291 -

RFQ

Tape & Reel (TR) * Obsolete - - - - - - - - - - - - - -
NVTFS012P03P8Z

NVTFS012P03P8Z

MOSFET P-CH 30V 8DFN

onsemi
2,348 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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