Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ZXMN3A02X8TA

ZXMN3A02X8TA

MOSFET N-CH 30V 5.3A 8MSOP

Diodes Incorporated
3,419 -

RFQ

ZXMN3A02X8TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 25mOhm @ 12A, 10V 1V @ 250µA 26.8 nC @ 10 V ±20V 1400 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZXMN3A02N8TA

ZXMN3A02N8TA

MOSFET N-CH 30V 7.3A 8SO

Diodes Incorporated
2,395 -

RFQ

ZXMN3A02N8TA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.3A (Ta) 4.5V, 10V 25mOhm @ 12A, 10V 1V @ 250µA 26.8 nC @ 10 V ±20V 1400 pF @ 25 V - 1.56W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PHB222NQ04LT,118

PHB222NQ04LT,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
3,719 -

RFQ

PHB222NQ04LT,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 2.8mOhm @ 25A, 10V 2V @ 1mA 93.6 nC @ 5 V ±15V 7880 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMF370XN,115

PMF370XN,115

MOSFET N-CH 30V 870MA SOT323

Nexperia USA Inc.
3,410 -

RFQ

PMF370XN,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 870mA (Tc) 4.5V 440mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.65 nC @ 4.5 V ±12V 37 pF @ 25 V - 560mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7506-75B,127

BUK7506-75B,127

MOSFET N-CH 75V 75A TO220AB

NXP USA Inc.
1,300 -

RFQ

BUK7506-75B,127

Ficha técnica

Tube,Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 5.6mOhm @ 25A, 10V 4V @ 1mA 91 nC @ 10 V ±20V 7446 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN005-55B,118

PSMN005-55B,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
3,891 -

RFQ

PSMN005-55B,118

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 5.8mOhm @ 25A, 10V 2V @ 1mA 103 nC @ 5 V ±15V 6500 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB110NQ06LT,118

PHB110NQ06LT,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
3,226 -

RFQ

PHB110NQ06LT,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 45 nC @ 5 V ±15V 3960 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHB101NQ04T,118

PHB101NQ04T,118

MOSFET N-CH 40V 75A D2PAK

NXP USA Inc.
2,456 -

RFQ

PHB101NQ04T,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 25A, 10V 4V @ 1mA 36.6 nC @ 10 V ±20V 2020 pF @ 25 V - 157W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PH5330E,115

PH5330E,115

MOSFET N-CH 30V 80A LFPAK56

NXP USA Inc.
2,601 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.7mOhm @ 15A, 10V 2.5V @ 1mA 21 nC @ 5 V ±20V 2010 pF @ 10 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSH111,235

BSH111,235

MOSFET N-CH 55V 335MA TO236AB

Nexperia USA Inc.
3,638 -

RFQ

BSH111,235

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 335mA (Ta) 1.8V, 4.5V 4Ohm @ 500mA, 4.5V 1.3V @ 1mA 1 nC @ 8 V ±10V 40 pF @ 10 V - 830mW (Tc) -65°C ~ 150°C (TJ) Surface Mount
BUK9615-100A,118

BUK9615-100A,118

MOSFET N-CH 100V 75A D2PAK

Nexperia USA Inc.
2,385 -

RFQ

BUK9615-100A,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 5V, 10V 14.4mOhm @ 25A, 10V 2V @ 1mA - ±10V 8600 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMV60EN,215

PMV60EN,215

MOSFET N-CH 30V 4.7A TO236AB

NXP USA Inc.
3,014 -

RFQ

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.7A (Tc) 4.5V, 10V 55mOhm @ 2A, 10V 2V @ 1mA 9.4 nC @ 10 V ±20V 350 pF @ 30 V - 280mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
PMV31XN,215

PMV31XN,215

MOSFET N-CH 20V 5.9A TO236AB

NXP USA Inc.
3,912 -

RFQ

PMV31XN,215

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 5.9A (Tc) 2.5V, 4.5V 37mOhm @ 1.5A, 4.5V 1.5V @ 1mA 5.8 nC @ 4.5 V ±12V 410 pF @ 20 V - 280mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
PMN23UN,165

PMN23UN,165

MOSFET N-CH 20V 6.3A 6TSOP

NXP USA Inc.
2,519 -

RFQ

PMN23UN,165

Ficha técnica

Tape & Reel (TR) TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.3A (Tc) 1.8V, 4.5V 28mOhm @ 2A, 4.5V 700mV @ 1mA (Typ) 10.6 nC @ 4.5 V ±8V 740 pF @ 10 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN23UN,135

PMN23UN,135

MOSFET N-CH 20V 6.3A 6TSOP

NXP USA Inc.
11,649 -

RFQ

PMN23UN,135

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.3A (Tc) 1.8V, 4.5V 28mOhm @ 2A, 4.5V 700mV @ 1mA (Typ) 10.6 nC @ 4.5 V ±8V 740 pF @ 10 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF510

IRF510

MOSFET N-CH 100V 5.6A TO220AB

Vishay Siliconix
2,860 -

RFQ

IRF510

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9510

IRF9510

MOSFET P-CH 100V 4A TO220AB

Vishay Siliconix
2,741 -

RFQ

IRF9510

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9220

IRFD9220

MOSFET P-CH 200V 560MA 4DIP

Vishay Siliconix
3,127 -

RFQ

IRFD9220

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 560mA (Ta) 10V 1.5Ohm @ 340mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 340 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
IRF840

IRF840

MOSFET N-CH 500V 8A TO220AB

Vishay Siliconix
3,411 -

RFQ

IRF840

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD110

IRFD110

MOSFET N-CH 100V 1A 4DIP

Vishay Siliconix
3,676 -

RFQ

IRFD110

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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