Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBG20

IRFBG20

MOSFET N-CH 1000V 1.4A TO220AB

Vishay Siliconix
3,899 -

RFQ

IRFBG20

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Tc) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBG30

IRFBG30

MOSFET N-CH 1000V 3.1A TO220AB

Vishay Siliconix
2,882 -

RFQ

IRFBG30

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 3.1A (Tc) 10V 5Ohm @ 1.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 980 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N90

IXFH12N90

MOSFET N-CH 900V 12A TO247AD

IXYS
2,712 -

RFQ

IXFH12N90

Ficha técnica

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 900 V 12A (Tc) 10V 900mOhm @ 6A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH6N100

IXFH6N100

MOSFET N-CH 1000V 6A TO247AD

IXYS
2,916 -

RFQ

IXFH6N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 6A (Tc) 10V 2Ohm @ 500mA, 10V 4.5V @ 2.5mA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N100

IXFH12N100

MOSFET N-CH 1000V 12A TO247AD

IXYS
2,442 -

RFQ

IXFH12N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 12A (Tc) 10V 1.05Ohm @ 6A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK110N07

IXFK110N07

MOSFET N-CH 70V 110A TO264AA

IXYS
3,464 -

RFQ

IXFK110N07

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 70 V 110A (Tc) 10V 6mOhm @ 55A, 10V 4V @ 8mA 480 nC @ 10 V ±20V 9000 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDP7050

NDP7050

MOSFET N-CH 50V 75A TO220-3

onsemi
3,994 -

RFQ

NDP7050

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 10V 13mOhm @ 40A, 10V 4V @ 250µA 115 nC @ 10 V ±20V 3600 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
NDP7050L

NDP7050L

MOSFET N-CH 50V 75A TO220-3

onsemi
3,576 -

RFQ

NDP7050L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 5V 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V ±20V 4000 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
NDP7060

NDP7060

MOSFET N-CH 60V 75A TO220-3

onsemi
3,900 -

RFQ

NDP7060

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 13mOhm @ 40A, 10V 4V @ 250µA 115 nC @ 10 V ±20V 3600 pF @ 25 V - 150W (Tc) -65°C ~ 175°C (TJ) Through Hole
NDP7060L

NDP7060L

MOSFET N-CH 60V 75A TO220-3

onsemi
2,771 -

RFQ

NDP7060L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) - 15mOhm @ 37.5A, 5V 2V @ 250µA 115 nC @ 5 V - 4000 pF @ 25 V - - - Through Hole
BSS100

BSS100

MOSFET N-CH 100V 220MA TO92-3

onsemi
2,156 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 220mA (Ta) - 6Ohm @ 220mA, 10V 2V @ 1mA 2 nC @ 10 V - 60 pF @ 25 V - - - Through Hole
IRL3103D1S

IRL3103D1S

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
2,465 -

RFQ

IRL3103D1S

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 14mOhm @ 34A, 10V 1V @ 250µA 43 nC @ 4.5 V ±16V 1900 pF @ 25 V - 3.1W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL3103S

IRL3103S

MOSFET N-CH 30V 64A D2PAK

Infineon Technologies
3,857 -

RFQ

IRL3103S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 64A (Tc) 4.5V, 10V 12mOhm @ 34A, 10V 1V @ 250µA 33 nC @ 4.5 V ±16V 1650 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3303S

IRL3303S

MOSFET N-CH 30V 38A D2PAK

Infineon Technologies
3,892 -

RFQ

IRL3303S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3803S

IRL3803S

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,886 -

RFQ

IRL3803S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFT58N20Q

IXFT58N20Q

MOSFET N-CH 200V 58A TO268

IXYS
3,756 -

RFQ

IXFT58N20Q

Ficha técnica

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 58A (Tc) 10V 40mOhm @ 29A, 10V 4V @ 4mA 140 nC @ 10 V ±20V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFI830G

IRFI830G

MOSFET N-CH 500V 3.1A TO220-3

Vishay Siliconix
3,122 -

RFQ

IRFI830G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 3.1A (Tc) 10V 1.5Ohm @ 1.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR9210

IRFR9210

MOSFET P-CH 200V 1.9A DPAK

Vishay Siliconix
2,343 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 1.9A (Tc) 10V 3Ohm @ 1.1A, 10V 4V @ 250µA 8.9 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FB180SA10

FB180SA10

MOSFET N-CH 100V 180A SOT-227

Vishay General Semiconductor - Diodes Division
2,350 -

RFQ

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6.5mOhm @ 108A, 10V 4V @ 250µA 380 nC @ 10 V ±20V 10700 pF @ 25 V - 480W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IRF614S

IRF614S

MOSFET N-CH 250V 2.7A D2PAK

Vishay Siliconix
2,720 -

RFQ

IRF614S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário