Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFIB7N50A

IRFIB7N50A

MOSFET N-CH 500V 6.6A TO220-3

Vishay Siliconix
2,697 -

RFQ

IRFIB7N50A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.6A (Tc) 10V 520mOhm @ 4A, 10V 4V @ 250µA 52 nC @ 10 V ±30V 1423 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC20G

IRFIBC20G

MOSFET N-CH 600V 1.7A TO220-3

Vishay Siliconix
3,111 -

RFQ

IRFIBC20G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.7A (Tc) 10V 4.4Ohm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC30G

IRFIBC30G

MOSFET N-CH 600V 2.5A TO220-3

Vishay Siliconix
3,463 -

RFQ

IRFIBC30G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.5A (Tc) 10V 2.2Ohm @ 1.5A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBC40G

IRFIBC40G

MOSFET N-CH 600V 3.5A TO220-3

Vishay Siliconix
3,982 -

RFQ

IRFIBC40G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 3.5A (Tc) 10V 1.2Ohm @ 2.1A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBE20G

IRFIBE20G

MOSFET N-CH 800V 1.4A TO220-3

Vishay Siliconix
3,520 -

RFQ

IRFIBE20G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.4A (Tc) 10V 6.5Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBE30G

IRFIBE30G

MOSFET N-CH 800V 2.1A TO220-3

Vishay Siliconix
3,654 -

RFQ

IRFIBE30G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 2.1A (Tc) 10V 3Ohm @ 1.3A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBF20G

IRFIBF20G

MOSFET N-CH 900V 1.2A TO220-3

Vishay Siliconix
3,710 -

RFQ

IRFIBF20G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.2A (Tc) 10V 8Ohm @ 720mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIBF30G

IRFIBF30G

MOSFET N-CH 900V 1.9A TO220-3

Vishay Siliconix
3,588 -

RFQ

IRFIBF30G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.9A (Tc) 10V 3.7Ohm @ 1.1A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIZ14G

IRFIZ14G

MOSFET N-CH 60V 8A TO220-3

Vishay Siliconix
2,811 -

RFQ

IRFIZ14G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 8A (Tc) 10V 200mOhm @ 4.8A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24G

IRFIZ24G

MOSFET N-CH 60V 14A TO220-3

Vishay Siliconix
3,292 -

RFQ

IRFIZ24G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ34G

IRFIZ34G

MOSFET N-CH 60V 20A TO220-3

Vishay Siliconix
2,028 -

RFQ

IRFIZ34G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 50mOhm @ 12A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFL014

IRFL014

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
2,262 -

RFQ

IRFL014

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 10V 200mOhm @ 1.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL014TR

IRFL014TR

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
3,228 -

RFQ

IRFL014TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 10V 200mOhm @ 1.6A, 10V 4V @ 250µA 11 nC @ 10 V ±20V 300 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL110

IRFL110

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
3,352 -

RFQ

IRFL110

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL110TR

IRFL110TR

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
3,079 -

RFQ

IRFL110TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 10V 540mOhm @ 900mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL210

IRFL210

MOSFET N-CH 200V 960MA SOT223

Vishay Siliconix
3,335 -

RFQ

IRFL210

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 960mA (Tc) 10V 1.5Ohm @ 580mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL210TR

IRFL210TR

MOSFET N-CH 200V 960MA SOT223

Vishay Siliconix
3,441 -

RFQ

IRFL210TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 960mA (Tc) 10V 1.5Ohm @ 580mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL214

IRFL214

MOSFET N-CH 250V 790MA SOT223

Vishay Siliconix
3,198 -

RFQ

IRFL214

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 790mA (Tc) 10V 2Ohm @ 470mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL9014

IRFL9014

MOSFET P-CH 60V 1.8A SOT223

Vishay Siliconix
3,666 -

RFQ

IRFL9014

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Tc) 10V 500mOhm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL9014TR

IRFL9014TR

MOSFET P-CH 60V 1.8A SOT223

Vishay Siliconix
2,736 -

RFQ

IRFL9014TR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.8A (Tc) 10V 500mOhm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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