Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6020JNJGTL

R6020JNJGTL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor
3,326 -

RFQ

R6020JNJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 252W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6024ENJTL

R6024ENJTL

MOSFET N-CH 600V 24A LPTS

Rohm Semiconductor
2,579 -

RFQ

R6024ENJTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
RSJ550N10TL

RSJ550N10TL

MOSFET N-CH 100V 55A LPTS

Rohm Semiconductor
2,144 -

RFQ

RSJ550N10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 55A (Ta) 4V, 10V 16.8mOhm @ 27.5A, 10V 2.5V @ 1mA 143 nC @ 10 V ±20V 6150 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
RJ1G12BGNTLL

RJ1G12BGNTLL

MOSFET N-CH 40V 120A LPTL

Rohm Semiconductor
2,642 -

RFQ

RJ1G12BGNTLL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 4.5V, 10V 1.86mOhm @ 50A, 10V 2.5V @ 2mA 165 nC @ 10 V ±20V 12500 pF @ 20 V - 178W (Tc) 150°C (TJ) Surface Mount
R8008ANJFRGTL

R8008ANJFRGTL

MOSFET N-CH 800V 8A LPTS

Rohm Semiconductor
3,273 -

RFQ

R8008ANJFRGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Surface Mount
RCJ700N20TL

RCJ700N20TL

MOSFET N-CH 200V 70A LPTS

Rohm Semiconductor
2,839 -

RFQ

RCJ700N20TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 70A (Tc) 10V 42.7mOhm @ 35A, 10V 5V @ 1mA 125 nC @ 10 V ±30V 6900 pF @ 25 V - 1.56W (Ta), 40W (Tc) 150°C (TJ) Surface Mount
R6020KNX

R6020KNX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
2,581 -

RFQ

R6020KNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) -55°C ~ 150°C (TJ) Through Hole
RCX511N25

RCX511N25

MOSFET N-CH 250V 51A TO220FM

Rohm Semiconductor
3,931 -

RFQ

RCX511N25

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 51A (Tc) 10V 65mOhm @ 25.5A, 10V 5V @ 1mA 120 nC @ 10 V ±30V 7000 pF @ 25 V - 2.23W (Ta), 40W (Tc) 150°C (TJ) Through Hole
R6011ENX

R6011ENX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor
3,187 -

RFQ

R6011ENX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
R6030KNXC7

R6030KNXC7

MOSFET N-CH 600V 30A TO220FM

Rohm Semiconductor
3,642 -

RFQ

R6030KNXC7

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) -55°C ~ 150°C (TJ) Through Hole
RSD200N10TL

RSD200N10TL

MOSFET N-CH 100V 20A CPT3

Rohm Semiconductor
2,356 -

RFQ

RSD200N10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Ta) 4V, 10V 52mOhm @ 10A, 10V 2.5V @ 1mA 48.5 nC @ 10 V ±20V 2200 pF @ 25 V - 20W (Tc) 150°C (TJ) Surface Mount
RDN050N20FU6

RDN050N20FU6

MOSFET N-CH 200V 5A TO220FN

Rohm Semiconductor
2,712 -

RFQ

RDN050N20FU6

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 5A (Ta) 10V 720mOhm @ 2.5A, 10V 4V @ 1mA 18.6 nC @ 10 V ±30V 292 pF @ 10 V - 30W (Tc) 150°C (TJ) Through Hole
RDN080N25FU6

RDN080N25FU6

MOSFET N-CH 250V 8A TO220FN

Rohm Semiconductor
3,106 -

RFQ

RDN080N25FU6

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8A (Ta) 10V 500mOhm @ 4A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 543 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
RDN100N20FU6

RDN100N20FU6

MOSFET N-CH 200V 10A TO220FN

Rohm Semiconductor
3,392 -

RFQ

RDN100N20FU6

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 10A (Ta) 10V 360mOhm @ 5A, 10V 4V @ 1mA 30 nC @ 10 V ±30V 543 pF @ 10 V - 35W (Tc) 150°C (TJ) Through Hole
RDN120N25FU6

RDN120N25FU6

MOSFET N-CH 250V 12A TO220FN

Rohm Semiconductor
3,643 -

RFQ

RDN120N25FU6

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 12A (Ta) 10V 210mOhm @ 6A, 10V 4V @ 1mA 62 nC @ 10 V ±30V 1224 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
RDN150N20FU6

RDN150N20FU6

MOSFET N-CH 200V 15A TO220FN

Rohm Semiconductor
2,040 -

RFQ

RDN150N20FU6

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 15A (Ta) 10V 160mOhm @ 7.5A, 10V 4V @ 1mA 64 nC @ 10 V ±30V 1224 pF @ 10 V - 40W (Tc) 150°C (TJ) Through Hole
BSM300C12P3E301

BSM300C12P3E301

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor
3,253 -

RFQ

BSM300C12P3E301

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 300A (Tc) - - 5.6V @ 80mA - +22V, -4V 1500 pF @ 10 V Standard 1360W (Tc) -40°C ~ 150°C (TJ) -
RQ6E035ATTCR

RQ6E035ATTCR

MOSFET P-CH 30V 3.5A TSMT6

Rohm Semiconductor
2,517 -

RFQ

RQ6E035ATTCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 4.5V, 10V 50mOhm @ 3.5A, 10V 2.5V @ 1mA 10 nC @ 10 V ±20V 475 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
RF4E080GNTR

RF4E080GNTR

MOSFET N-CH 30V 8A HUML2020L8

Rohm Semiconductor
2,850 -

RFQ

RF4E080GNTR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 8A (Ta) 4.5V, 10V 17.6mOhm @ 8A, 10V 2.5V @ 250µA 5.8 nC @ 10 V ±20V 295 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
RQ3E150BNTB

RQ3E150BNTB

MOSFET N-CH 30V 15A 8HSMT

Rohm Semiconductor
2,453 -

RFQ

RQ3E150BNTB

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 5.3mOhm @ 15A, 10V 2.5V @ 1mA 45 nC @ 10 V ±20V 3000 pF @ 15 V - 2W (Ta) 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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