Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6524ENZC17

R6524ENZC17

MOSFET N-CH 650V 24A TO3

Rohm Semiconductor
2,469 -

RFQ

R6524ENZC17

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
RSJ650N10TL

RSJ650N10TL

MOSFET N-CH 100V 65A LPTS

Rohm Semiconductor
665 -

RFQ

RSJ650N10TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 65A (Ta) 4V, 10V 9.1mOhm @ 32.5A, 10V 2.5V @ 1mA 260 nC @ 10 V ±20V 10780 pF @ 25 V - 100W (Tc) 150°C (TJ) Surface Mount
R6020PNJFRATL

R6020PNJFRATL

MOSFET N-CH 600V 20A LPTS

Rohm Semiconductor
922 -

RFQ

R6020PNJFRATL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 4.5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 304W (Tc) 150°C (TJ) Surface Mount
R6530KNZC17

R6530KNZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor
3,115 -

RFQ

R6530KNZC17

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 5V @ 960µA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
R6530ENZC17

R6530ENZC17

MOSFET N-CH 650V 30A TO3

Rohm Semiconductor
2,130 -

RFQ

R6530ENZC17

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 140mOhm @ 14.5A, 10V 4V @ 960µA 90 nC @ 10 V ±20V 2100 pF @ 25 V - 86W (Tc) 150°C (TJ) Through Hole
R6030KNZ4C13

R6030KNZ4C13

MOSFET N-CH 600V 30A TO247

Rohm Semiconductor
600 -

RFQ

R6030KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 5V @ 1mA 56 nC @ 10 V ±20V 2350 pF @ 25 V - 305W (Tc) 150°C (TJ) Through Hole
R6020FNX

R6020FNX

MOSFET N-CH 600V 20A TO220FM

Rohm Semiconductor
494 -

RFQ

R6020FNX

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 250mOhm @ 10A, 10V 5V @ 1mA 65 nC @ 10 V ±30V 2040 pF @ 25 V - 50W (Tc) 150°C (TJ) Through Hole
R6020JNZC17

R6020JNZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor
3,667 -

RFQ

R6020JNZC17

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 15V 234mOhm @ 10A, 15V 7V @ 3.5mA 45 nC @ 15 V ±30V 1500 pF @ 100 V - 76W (Tc) 150°C (TJ) Through Hole
R6035KNZ4C13

R6035KNZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor
600 -

RFQ

R6035KNZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 102mOhm @ 18.1A, 10V 5V @ 1mA 72 nC @ 10 V ±20V 3000 pF @ 25 V - 379W (Tc) 150°C (TJ) Through Hole
SCT3120AW7TL

SCT3120AW7TL

SICFET N-CH 650V 21A TO263-7

Rohm Semiconductor
858 -

RFQ

SCT3120AW7TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 21A (Tc) - 156mOhm @ 6.7A, 18V 5.6V @ 3.33mA 38 nC @ 18 V +22V, -4V 460 pF @ 500 V - 100W 175°C (TJ) Surface Mount
R6035ENZ4C13

R6035ENZ4C13

MOSFET N-CH 600V 35A TO247

Rohm Semiconductor
2,364 -

RFQ

R6035ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V, 15V 102mOhm @ 35A, 15V - - - - - 379W (Tc) - Through Hole
R6030ENZC17

R6030ENZC17

MOSFET N-CH 600V 30A TO3PF

Rohm Semiconductor
2,866 -

RFQ

R6030ENZC17

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 30A (Tc) 10V 130mOhm @ 14.5A, 10V 4V @ 1mA 85 nC @ 10 V ±20V 2100 pF @ 25 V - 120W (Tc) 150°C (TJ) Through Hole
R6025JNZC17

R6025JNZC17

MOSFET N-CH 600V 25A TO3PF

Rohm Semiconductor
2,247 -

RFQ

R6025JNZC17

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 15V 182mOhm @ 12.5A, 15V 7V @ 2.5mA 57 nC @ 15 V ±30V 1900 pF @ 100 V - 85W (Tc) 150°C (TJ) Through Hole
ES6U42FU7T2CR

ES6U42FU7T2CR

MOSFET/SCHOTTKY NCH SOT-563

Rohm Semiconductor
2,609 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
ES6M2T2CR

ES6M2T2CR

MOSFET/SCHOTTKY NCH SOT-563

Rohm Semiconductor
2,125 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
ES6U41FU7T2CR

ES6U41FU7T2CR

MOSFET/SCHOTTKY NCH SOT-563

Rohm Semiconductor
2,800 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
ES6U42FU7T2R

ES6U42FU7T2R

MOSFET/SCHOTTKY NCH SOT-563

Rohm Semiconductor
3,624 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
ES6U41FU7T2R

ES6U41FU7T2R

MOSFET/SCHOTTKY NCH SOT-563

Rohm Semiconductor
3,718 -

RFQ

Tape & Reel (TR) - Obsolete - - - - - - - - - - - - - -
SCT3080AW7TL

SCT3080AW7TL

SICFET N-CH 650V 29A TO263-7

Rohm Semiconductor
929 -

RFQ

SCT3080AW7TL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel SiCFET (Silicon Carbide) 650 V 29A (Tc) - 104mOhm @ 10A, 18V 5.6V @ 5mA 48 nC @ 18 V +22V, -4V 571 pF @ 500 V - 125W 175°C (TJ) Surface Mount
R6076MNZ1C9

R6076MNZ1C9

MOSFET N-CHANNEL 600V 76A TO247

Rohm Semiconductor
435 -

RFQ

R6076MNZ1C9

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 76A (Tc) 10V 55mOhm @ 38A, 10V 5V @ 1mA 115 nC @ 10 V ±30V 7000 pF @ 25 V - 740W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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