Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76429D3

HUF76429D3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,441 -

RFQ

HUF76429D3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76143S3ST

HUF76143S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,364 -

RFQ

HUF76143S3ST

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 5.5mOhm @ 75A, 10V 3V @ 250µA 114 nC @ 10 V ±20V 3900 pF @ 25 V - 225W (Tc) -40°C ~ 150°C (TJ) Surface Mount
HUF76639S3S

HUF76639S3S

MOSFET N-CH 100V 51A D2PAK

Fairchild Semiconductor
535 -

RFQ

HUF76639S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 51A (Tc) 4.5V, 10V 26mOhm @ 51A, 10V 3V @ 250µA 86 nC @ 10 V ±16V 2400 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJK03A4DPA-00#J53

RJK03A4DPA-00#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NTD6N40

NTD6N40

N-CHANNEL POWER MOSFET

onsemi
7,699 -

RFQ

NTD6N40

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
STP3N50E

STP3N50E

NFET T0220 SPCL 500V

onsemi
7,200 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
ON5278/C4127

ON5278/C4127

N CHANNEL TRENCHFET

Nexperia USA Inc.
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1728G(0)-E1-AY

UPA1728G(0)-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FDZ7296

FDZ7296

MOSFET N-CH 30V 11A 18BGA

Fairchild Semiconductor
4,835 -

RFQ

FDZ7296

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8.5mOhm @ 11A, 10V 3V @ 250µA 31 nC @ 10 V ±20V 1520 pF @ 15 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUF76423S3ST

HUF76423S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,000 -

RFQ

HUF76423S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUFA75329D3

HUFA75329D3

MOSFET N-CH 55V 20A IPAK

Fairchild Semiconductor
3,600 -

RFQ

HUFA75329D3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 26mOhm @ 20A, 10V 4V @ 250µA 65 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI16N25CTU

FQI16N25CTU

MOSFET N-CH 250V 15.6A I2PAK

Fairchild Semiconductor
3,589 -

RFQ

FQI16N25CTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 15.6A (Tc) 10V 270mOhm @ 7.8A, 10V 4V @ 250µA 53.5 nC @ 10 V ±30V 1080 pF @ 25 V - 3.13W (Ta), 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTD5N50-001

NTD5N50-001

NFET DPAK 500V 1.8R

onsemi
3,150 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1807GR-9JG-E1-A

UPA1807GR-9JG-E1-A

MOSFET N-CH 30V 12A 8TSSOP

Renesas Electronics America Inc
3,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) - 10mOhm @ 6A, 10V 2.5V @ 1mA 19 nC @ 10 V - 1000 pF @ 10 V - - - Surface Mount
RJK03K1DPA-00#J5A

RJK03K1DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF44N08T

FQPF44N08T

MOSFET N-CH 80V 25A TO-220F

Fairchild Semiconductor
2,667 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 34mOhm @ 12.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1430 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK954R4-40B127

BUK954R4-40B127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,000 -

RFQ

BUK954R4-40B127

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 4mOhm @ 25A, 10V 2V @ 1mA 64 nC @ 5 V ±15V 7124 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDB8453LZ

FDB8453LZ

MOSFET N-CH 40V 16.1A/50A TO263

Fairchild Semiconductor
1,734 -

RFQ

FDB8453LZ

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 16.1A (Ta), 50A (Tc) 4.5V, 10V 7mOhm @ 17.6A, 10V 3V @ 250µA 66 nC @ 10 V ±20V 3545 pF @ 20 V - 3.1W (Ta), 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PHB20NQ20T118

PHB20NQ20T118

N-CHANNEL POWER MOSFET

Nexperia USA Inc.
1,100 -

RFQ

PHB20NQ20T118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 4V @ 1mA 65 nC @ 10 V ±20V 2470 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB16N15TM

FQB16N15TM

MOSFET N-CH 150V 16.4A D2PAK

Fairchild Semiconductor
959 -

RFQ

FQB16N15TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 16.4A (Tc) 10V 160mOhm @ 8.2A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 910 pF @ 25 V - 3.75W (Ta), 108W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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