Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPW52N50C3FKSA1

SPW52N50C3FKSA1

MOSFET N-CH 560V 52A TO247-3

Infineon Technologies
2,379 -

RFQ

SPW52N50C3FKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 560 V 52A (Tc) 10V 70mOhm @ 30A, 10V 3.9V @ 2.7mA 290 nC @ 10 V ±20V 6800 pF @ 25 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF150P220AKMA1

IRF150P220AKMA1

MOSFET N-CH 150V 203A TO247-3

Infineon Technologies
2,076 -

RFQ

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 203A (Tc) 10V 2.7mOhm @ 100A, 10V 4.6V @ 265µA 200 nC @ 10 V ±20V 12000 pF @ 75 V - 3.8W (Ta), 556W (Tc) -55°C ~ 175°C (TJ) Through Hole
IMBG120R045M1HXTMA1

IMBG120R045M1HXTMA1

SICFET N-CH 1.2KV 47A TO263

Infineon Technologies
2,253 -

RFQ

IMBG120R045M1HXTMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 47A (Tc) - 63mOhm @ 16A, 18V 5.7V @ 7.5mA 46 nC @ 18 V +18V, -15V 1527 pF @ 800 V Standard 227W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPT60R040S7XTMA1

IPT60R040S7XTMA1

MOSFET N-CH 600V 13A 8HSOF

Infineon Technologies
3,829 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™S7 Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 12V 40mOhm @ 13A, 12V 4.5V @ 790µA 83 nC @ 12 V ±20V 3127 pF @ 300 V - 245W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP023NE7N3GXKSA1

IPP023NE7N3GXKSA1

MOSFET N-CH 75V 120A TO220-3

Infineon Technologies
2,692 -

RFQ

IPP023NE7N3GXKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.8V @ 273µA 206 nC @ 10 V ±20V 14400 pF @ 37.5 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AIMW120R060M1HXKSA1

AIMW120R060M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies
3,311 -

RFQ

AIMW120R060M1HXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 78mOhm @ 13A, 18V 5.7V @ 5.6mA 31 nC @ 18 V +23V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R024CFD7XKSA1

IPW60R024CFD7XKSA1

MOSFET N-CH 650V 77A TO247-3-41

Infineon Technologies
2,706 -

RFQ

IPW60R024CFD7XKSA1

Ficha técnica

Tube CoolMOS™ CFD7 Active N-Channel MOSFET (Metal Oxide) 650 V 77A (Tc) 10V 24mOhm @ 42.4A, 10V 4.5V @ 2.12mA 183 nC @ 10 V ±20V 7268 pF @ 400 V - 320W (Tc) -55°C ~ 150°C (TJ) Through Hole
AIMW120R035M1HXKSA1

AIMW120R035M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies
2,348 -

RFQ

AIMW120R035M1HXKSA1

Ficha técnica

Tube Automotive, AEC-Q101, CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 1200 V 52A (Tc) 18V 46mOhm @ 25A, 18V 5.7V @ 10mA 59 nC @ 18 V +23V, -7V 2130 pF @ 800 V - 228W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPZ65R019C7XKSA1

IPZ65R019C7XKSA1

MOSFET N-CH 650V 75A TO247-4

Infineon Technologies
3,511 -

RFQ

IPZ65R019C7XKSA1

Ficha técnica

Tube CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 75A (Tc) 10V 19mOhm @ 58.3A, 10V 4V @ 2.92mA 215 nC @ 10 V ±20V 9900 pF @ 400 V - 446W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA03N60C3XKSA1

SPA03N60C3XKSA1

MOSFET N-CH 650V 3.2A TO220-FP

Infineon Technologies
3,664 -

RFQ

SPA03N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 3.9V @ 135µA 17 nC @ 10 V ±20V 400 pF @ 25 V - 29.7W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA06N60C3XKSA1

SPA06N60C3XKSA1

MOSFET N-CH 650V 6.2A TO220-FP

Infineon Technologies
2,992 -

RFQ

SPA06N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA07N65C3XKSA1

SPA07N65C3XKSA1

MOSFET N-CH 650V 7.3A TO220-FP

Infineon Technologies
8,500 -

RFQ

SPA07N65C3XKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 27 nC @ 10 V ±20V 790 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSA223SP

BSA223SP

MOSFET P-CH 20V 390MA SC75

Infineon Technologies
3,969 -

RFQ

BSA223SP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Discontinued at Mosen P-Channel MOSFET (Metal Oxide) 20 V 390mA (Ta) 2.5V, 4.5V 1.2Ohm @ 390mA, 4.5V 1.2V @ 1.5µA 0.62 nC @ 4.5 V ±12V 56 pF @ 15 V - 250mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC020N025S G

BSC020N025S G

MOSFET N-CH 25V 30A/100A TDSON

Infineon Technologies
2,868 -

RFQ

BSC020N025S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 30A (Ta), 100A (Tc) 4.5V, 10V 2mOhm @ 50A, 10V 2V @ 110µA 66 nC @ 5 V ±20V 8290 pF @ 15 V - 2.8W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC029N025S G

BSC029N025S G

MOSFET N-CH 25V 24A/100A TDSON

Infineon Technologies
2,435 -

RFQ

BSC029N025S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.9mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5090 pF @ 15 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC048N025S G

BSC048N025S G

MOSFET N-CH 25V 19A/89A TDSON

Infineon Technologies
3,571 -

RFQ

BSC048N025S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 89A (Tc) 4.5V, 10V 4.8mOhm @ 50A, 10V 2V @ 35µA 21 nC @ 5 V ±20V 2670 pF @ 15 V - 2.8W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC059N03S G

BSC059N03S G

MOSFET N-CH 30V 17.5A/73A TDSON

Infineon Technologies
2,549 -

RFQ

BSC059N03S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 17.5A (Ta), 73A (Tc) 4.5V, 10V 5.5mOhm @ 50A, 10V 2V @ 35µA 21 nC @ 5 V ±20V 2670 pF @ 15 V - 17.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC119N03S G

BSC119N03S G

MOSFET N-CH 30V 11.9A/30A TDSON

Infineon Technologies
2,032 -

RFQ

BSC119N03S G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.9A (Ta), 30A (Tc) 4.5V, 10V 11.9mOhm @ 30A, 10V 2V @ 20µA 11 nC @ 5 V ±20V 1370 pF @ 15 V - 2.8W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSL211SPL6327HTSA1

BSL211SPL6327HTSA1

MOSFET P-CH 20V 4.7A TSOP-6

Infineon Technologies
2,513 -

RFQ

BSL211SPL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 2.5V, 4.5V 67mOhm @ 4.7A, 4.5V 1.2V @ 25µA 12.4 nC @ 4.5 V ±12V 654 pF @ 15 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSL307SPL6327HTSA1

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

Infineon Technologies
796,100 -

RFQ

BSL307SPL6327HTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.5A (Ta) 4.5V, 10V 43mOhm @ 5.5A, 10V 2V @ 40µA 29 nC @ 10 V ±20V 805 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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