Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSC886N03LS G

BSC886N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC886N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC886N03LSG

BSC886N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
4,609 -

RFQ

BSC886N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ101L

BUZ101L

N-CHANNEL POWER MOSFET

Infineon Technologies
5,075 -

RFQ

BUZ101L

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC8899N03MS

BSC8899N03MS

N-CHANNEL POWER MOSFET

Infineon Technologies
4,952 -

RFQ

BSC8899N03MS

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPD30N03S2L-20G

SPD30N03S2L-20G

N-CHANNEL POWER MOSFET

Infineon Technologies
8,367 -

RFQ

SPD30N03S2L-20G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPU60R1K4C6

IPU60R1K4C6

N-CHANNEL POWER MOSFET

Infineon Technologies
2,370 -

RFQ

IPU60R1K4C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP114N03LGHKSA1

IPP114N03LGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,642 -

RFQ

IPP114N03LGHKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSP125L6327

BSP125L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
9,915 -

RFQ

BSP125L6327

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP230N06L3GXKSA1

IPP230N06L3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
1,500 -

RFQ

IPP230N06L3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP065N03LG

IPP065N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
2,285 -

RFQ

IPP065N03LG

Ficha técnica

Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.5mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ73AIN

BUZ73AIN

N-CHANNEL POWER MOSFET

Infineon Technologies
966 -

RFQ

BUZ73AIN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC883N03LS G

BSC883N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC883N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP065N04NG

IPP065N04NG

N-CHANNEL POWER MOSFET

Infineon Technologies
5,952 -

RFQ

IPP065N04NG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 6.5mOhm @ 50A, 10V 4V @ 200µA 34 nC @ 10 V ±20V 2800 pF @ 20 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPD50N03S2L

SPD50N03S2L

N-CHANNEL POWER MOSFET

Infineon Technologies
1,600 -

RFQ

SPD50N03S2L

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSO203SP

BSO203SP

P-CHANNEL POWER MOSFET

Infineon Technologies
5,216 -

RFQ

BSO203SP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSF885N03LQ3G

BSF885N03LQ3G

N-CHANNEL POWER MOSFET

Infineon Technologies
10,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSF083N03LQG

BSF083N03LQG

N-CHANNEL POWER MOSFET

Infineon Technologies
6,000 -

RFQ

BSF083N03LQG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 53A (Tc) 4.5V, 10V 8.3mOhm @ 20A, 10V 2.2V @ 250µA 18 nC @ 10 V ±20V 1800 pF @ 15 V - 2.2W (Ta), 36W (Tc) -40°C ~ 150°C (TJ) Surface Mount
BSC882N03LSG

BSC882N03LSG

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC882N03LSG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC882N03LS G

BSC882N03LS G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,000 -

RFQ

BSC882N03LS G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPB10N10LG

SPB10N10LG

N-CHANNEL POWER MOSFET

Infineon Technologies
993 -

RFQ

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 100 V 10.3A (Tc) 10V 154mOhm @ 8.1A, 10V 2V @ 21µA 22 nC @ 10 V ±20V 444 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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