Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7821TR

IRF7821TR

MOSFET N-CH 30V 13.6A 8SO

Infineon Technologies
3,115 -

RFQ

IRF7821TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.6A (Ta) 4.5V, 10V 9.1mOhm @ 13A, 10V 1V @ 250µA 14 nC @ 4.5 V ±20V 1010 pF @ 15 V - 2.5W (Ta) -55°C ~ 155°C (TJ) Surface Mount
IRFR3707Z

IRFR3707Z

MOSFET N-CH 30V 56A DPAK

Infineon Technologies
2,346 -

RFQ

IRFR3707Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 56A (Tc) 4.5V, 10V 9.5mOhm @ 15A, 10V 2.25V @ 250µA 14 nC @ 4.5 V ±20V 1150 pF @ 15 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7833TR

IRLR7833TR

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,383 -

RFQ

IRLR7833TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7833TRL

IRLR7833TRL

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
2,880 -

RFQ

IRLR7833TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR7833TRR

IRLR7833TRR

MOSFET N-CH 30V 140A DPAK

Infineon Technologies
3,249 -

RFQ

IRLR7833TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8113

IRLR8113

MOSFET N-CH 30V 94A DPAK

Infineon Technologies
3,606 -

RFQ

IRLR8113

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 94A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.25V @ 250µA 32 nC @ 4.5 V ±20V 2920 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR8113TR

IRLR8113TR

MOSFET N-CH 30V 94A DPAK

Infineon Technologies
2,283 -

RFQ

IRLR8113TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 94A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.25V @ 250µA 32 nC @ 4.5 V ±20V 2920 pF @ 15 V - 89W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7492TR

IRF7492TR

MOSFET N-CH 200V 3.7A 8SO

Infineon Technologies
2,596 -

RFQ

IRF7492TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 79mOhm @ 2.2A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 1820 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7492

IRF7492

MOSFET N-CH 200V 3.7A 8SO

Infineon Technologies
2,131 -

RFQ

IRF7492

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3.7A (Ta) 10V 79mOhm @ 2.2A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 1820 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPI100N03S2L-03

SPI100N03S2L-03

MOSFET N-CH 30V 100A TO262-3

Infineon Technologies
3,124 -

RFQ

SPI100N03S2L-03

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 3mOhm @ 80A, 10V 2V @ 250µA 220 nC @ 10 V ±20V 8180 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7494TR

IRF7494TR

MOSFET N-CH 150V 5.2A 8-SOIC

Infineon Technologies
3,538 -

RFQ

IRF7494TR

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 5.2A (Ta) - 44mOhm @ 3.1A, 10V 4V @ 250µA 54 nC @ 10 V - 1750 pF @ 25 V - - - Surface Mount
SPU09P06PL

SPU09P06PL

MOSFET P-CH 60V 9.7A TO251-3

Infineon Technologies
2,347 -

RFQ

SPU09P06PL

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 9.7A (Tc) 4.5V, 10V 250mOhm @ 6.8A, 10V 2V @ 250µA 21 nC @ 10 V ±20V 450 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI04N03LA

IPI04N03LA

MOSFET N-CH 25V 80A TO262-3

Infineon Technologies
836 -

RFQ

IPI04N03LA

Ficha técnica

Tube,Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 4.2mOhm @ 55A, 10V 2V @ 60µA 32 nC @ 5 V ±20V 3877 pF @ 15 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP35N10

SPP35N10

MOSFET N-CH 100V 35A TO220-3

Infineon Technologies
33,068 -

RFQ

SPP35N10

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 35A (Tc) 10V 44mOhm @ 26.4A, 10V 4V @ 83µA 65 nC @ 10 V ±20V 1570 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPA11N60C3IN

SPA11N60C3IN

MOSFET N-CH 650V 11A TO220-3-31

Infineon Technologies
3,119 -

RFQ

SPA11N60C3IN

Ficha técnica

Tube CoolMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP21N10

SPP21N10

MOSFET N-CH 100V 21A TO220-3

Infineon Technologies
2,555 -

RFQ

SPP21N10

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 21A (Tc) 10V 80mOhm @ 15A, 10V 4V @ 44µA 38.4 nC @ 10 V ±20V 865 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI11N60C3XKSA1

SPI11N60C3XKSA1

MOSFET N-CH 650V 11A TO262-3

Infineon Technologies
3,419 -

RFQ

SPI11N60C3XKSA1

Ficha técnica

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP42N03S2L-13

SPP42N03S2L-13

MOSFET N-CH 30V 42A TO220-3

Infineon Technologies
3,430 -

RFQ

SPP42N03S2L-13

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 42A (Tc) 4.5V, 10V 12.9mOhm @ 21A, 10V 2V @ 37µA 30.5 nC @ 10 V ±20V 1130 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP73N03S2L08XK

SPP73N03S2L08XK

MOSFET N-CH 30V 73A TO220-3

Infineon Technologies
2,894 -

RFQ

SPP73N03S2L08XK

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8.4mOhm @ 36A, 10V 2V @ 55µA 46.2 nC @ 10 V ±20V 1710 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80P06PBKSA1

SPP80P06PBKSA1

MOSFET P-CH 60V 80A TO220-3

Infineon Technologies
2,178 -

RFQ

SPP80P06PBKSA1

Ficha técnica

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 10V 23mOhm @ 64A, 10V 4V @ 5.5mA 173 nC @ 10 V ±20V 5033 pF @ 25 V - 340W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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