Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BSS169H6906XTSA1

BSS169H6906XTSA1

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
47,588 -

RFQ

BSS169H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 0V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.8 nC @ 7 V ±20V 68 pF @ 10 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR120NTRLPBF

IRFR120NTRLPBF

MOSFET N-CH 100V 9.4A DPAK

Infineon Technologies
3,629 -

RFQ

IRFR120NTRLPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSS87H6327XTSA1

BSS87H6327XTSA1

MOSFET N-CH 240V 260MA SOT89-4

Infineon Technologies
3,970 -

RFQ

BSS87H6327XTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 240 V 260mA (Ta) 4.5V, 10V 6Ohm @ 260mA, 10V 1.8V @ 108µA 5.5 nC @ 10 V ±20V 97 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPS040N03LGAKMA1

IPS040N03LGAKMA1

MOSFET N-CH 30V 90A TO251-3

Infineon Technologies
3,708 -

RFQ

IPS040N03LGAKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 4mOhm @ 30A, 10V 2.2V @ 250µA 38 nC @ 10 V - 3900 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS050N03LGBKMA1

IPS050N03LGBKMA1

MOSFET N-CHANNEL 30V 50A TO251-3

Infineon Technologies
2,795 -

RFQ

IPS050N03LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V - 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS060N03LGBKMA1

IPS060N03LGBKMA1

MOSFET N-CHANNEL 30V 50A TO251-3

Infineon Technologies
2,850 -

RFQ

IPS060N03LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V - 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS075N03LGBKMA1

IPS075N03LGBKMA1

MOSFET N-CHANNEL 30V 50A TO251-3

Infineon Technologies
3,865 -

RFQ

IPS075N03LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.2V @ 250µA 18 nC @ 10 V - 1900 pF @ 15 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPS090N03LGBKMA1

IPS090N03LGBKMA1

MOSFET N-CHANNEL 30V 40A TO251-3

Infineon Technologies
2,774 -

RFQ

IPS090N03LGBKMA1

Ficha técnica

Tube OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7807ZTRPBF

IRF7807ZTRPBF

MOSFET N-CH 30V 11A 8SO

Infineon Technologies
15,947 -

RFQ

IRF7807ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 13.8mOhm @ 11A, 10V 2.25V @ 250µA 11 nC @ 4.5 V ±20V 770 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPD70R900P7SAUMA1

IPD70R900P7SAUMA1

MOSFET N-CH 700V 6A TO252-3

Infineon Technologies
2,400 -

RFQ

IPD70R900P7SAUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 6A (Tc) 10V 900mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8 nC @ 10 V ±16V 211 pF @ 400 V - 30.5W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD135N03LGATMA1

IPD135N03LGATMA1

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
11,322 -

RFQ

IPD135N03LGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 13.5mOhm @ 30A, 10V 2.2V @ 250µA 10 nC @ 10 V ±20V 1000 pF @ 15 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSC0904NSIATMA1

BSC0904NSIATMA1

MOSFET N-CH 30V 20A/78A TDSON

Infineon Technologies
34,696 -

RFQ

BSC0904NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 78A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2V @ 250µA 17 nC @ 10 V ±20V 1100 pF @ 15 V - 2.5W (Ta), 37W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPZ60R037P7XKSA1

IPZ60R037P7XKSA1

MOSFET N-CH 650V 76A TO247-4

Infineon Technologies
2,658 -

RFQ

Tube,Tube CoolMOS™ P7 Obsolete N-Channel MOSFET (Metal Oxide) 650 V 76A (Tc) 10V 37mOhm @ 29.5A, 10V 4V @ 1.48mA 121 nC @ 10 V ±20V 5243 pF @ 400 V - 255W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIPC30N60CFDX1SA1

SIPC30N60CFDX1SA1

MOSFET COOL MOS 600V

Infineon Technologies
3,603 -

RFQ

Box - Obsolete - - - - - - - - - - - - - -
SIPC26N60CFDX1SA1

SIPC26N60CFDX1SA1

MOSFET COOL MOS 600V

Infineon Technologies
2,347 -

RFQ

Box - Obsolete - - - - - - - - - - - - - -
IRFL4315TRPBF

IRFL4315TRPBF

MOSFET N-CH 150V 2.6A SOT223

Infineon Technologies
14,334 -

RFQ

IRFL4315TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.6A (Ta) 10V 185mOhm @ 1.6A, 10V 5V @ 250µA 19 nC @ 10 V ±30V 420 pF @ 25 V - 2.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP129H6327XTSA1

BSP129H6327XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
1,685 -

RFQ

BSP129H6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Active N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP372NH6327XTSA1

BSP372NH6327XTSA1

MOSFET N-CH 100V 1.8A SOT223-4

Infineon Technologies
14,633 -

RFQ

BSP372NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 1.8A (Ta) 4.5V, 10V 230mOhm @ 1.8A, 10V 1.8V @ 218µA 14.3 nC @ 10 V ±20V 329 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP373NH6327XTSA1

BSP373NH6327XTSA1

MOSFET N-CH 100V 1.8A SOT223-4

Infineon Technologies
9,254 -

RFQ

BSP373NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 1.8A (Ta) 10V 240mOhm @ 1.8A, 10V 4V @ 218µA 9.3 nC @ 10 V ±20V 265 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP129H6906XTSA1

BSP129H6906XTSA1

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
4,948 -

RFQ

BSP129H6906XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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