Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLHS6342TRPBF

IRLHS6342TRPBF

MOSFET N-CH 30V 8.7A/19A 6PQFN

Infineon Technologies
3,344 -

RFQ

IRLHS6342TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 8.7A (Ta), 19A (Tc) 2.5V, 4.5V 15.5mOhm @ 8.5A, 4.5V 1.1V @ 10µA 11 nC @ 4.5 V ±12V 1019 pF @ 25 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPL65R1K5C6SE8211ATMA1

IPL65R1K5C6SE8211ATMA1

IPL65R1K5 - 650V AND 700V COOLMO

Infineon Technologies
7,514 -

RFQ

IPL65R1K5C6SE8211ATMA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRLR3802PBF

IRLR3802PBF

IRLR3802 - 12V-300V N-CHANNEL PO

Infineon Technologies
2,596 -

RFQ

IRLR3802PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 12 V 84A (Tc) - 8.5mOhm @ 15A, 4.5V 1.9V @ 250µA 41 nC @ 5 V ±12V 2490 pF @ 6 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF5802TRPBF

IRF5802TRPBF

MOSFET N-CH 150V 900MA MICRO6

Infineon Technologies
6,490 -

RFQ

IRF5802TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 900mA (Ta) 10V 1.2Ohm @ 540mA, 10V 5.5V @ 250µA 6.8 nC @ 10 V ±30V 88 pF @ 25 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SPD100N03S2L-04

SPD100N03S2L-04

MOSFET N-CH 30V 100A TO252-5

Infineon Technologies
5,000 -

RFQ

SPD100N03S2L-04

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 4.2mOhm @ 50A, 10V 2V @ 100µA 89.7 nC @ 10 V ±20V 3320 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD11N10

SPD11N10

MOSFET N-CH 100V 10.5A TO252-3

Infineon Technologies
2,529 -

RFQ

SPD11N10

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10.5A (Tc) 10V 170mOhm @ 7.8A, 10V 4V @ 21µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30N03S2L-07

SPD30N03S2L-07

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
2,506 -

RFQ

SPD30N03S2L-07

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 6.7mOhm @ 30A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30N03S2L-10

SPD30N03S2L-10

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
3,572 -

RFQ

SPD30N03S2L-10

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V 2V @ 50µA 41.8 nC @ 10 V ±20V 1550 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30N03S2L-20

SPD30N03S2L-20

MOSFET N-CH 30V 30A TO252-3

Infineon Technologies
2,228 -

RFQ

SPD30N03S2L-20

Ficha técnica

Tape & Reel (TR) OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 20mOhm @ 18A, 10V 2V @ 23µA 19 nC @ 10 V ±20V 700 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD30P06P

SPD30P06P

MOSFET P-CH 60V 30A TO252-3

Infineon Technologies
2,425 -

RFQ

SPD30P06P

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 75mOhm @ 21.5A, 10V 4V @ 1.7mA 48 nC @ 10 V ±20V 1535 pF @ 25 V - 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD50N03S2L-06

SPD50N03S2L-06

MOSFET N-CH 30V 50A TO252-3

Infineon Technologies
2,500 -

RFQ

SPD50N03S2L-06

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6.4mOhm @ 50A, 10V 2V @ 85µA 68 nC @ 10 V ±20V 2530 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SPD50P03L

SPD50P03L

MOSFET PCH -30V -50A TO252-5-3

Infineon Technologies
3,440 -

RFQ

SPD50P03L

Ficha técnica

Bulk OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 7mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 10 V - 6880 pF @ 25 V - - - Surface Mount
IRF6618

IRF6618

MOSFET N-CH 30V 30A DIRECTFET

Infineon Technologies
3,923 -

RFQ

IRF6618

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.35V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6608

IRF6608

MOSFET N-CH 30V 13A DIRECTFET

Infineon Technologies
3,296 -

RFQ

IRF6608

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 55A (Tc) 4.5V, 10V 9mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 4.5 V ±12V 2120 pF @ 15 V - 2.1W (Ta), 42W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF1405Z

IRF1405Z

MOSFET N-CH 55V 75A TO220AB

Infineon Technologies
2,712 -

RFQ

IRF1405Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZL

IRF1405ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
3,673 -

RFQ

IRF1405ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1405ZS

IRF1405ZS

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
2,226 -

RFQ

IRF1405ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 4.9mOhm @ 75A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 4780 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF2807Z

IRF2807Z

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
2,112 -

RFQ

IRF2807Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZL

IRF2807ZL

MOSFET N-CH 75V 75A TO262

Infineon Technologies
3,884 -

RFQ

IRF2807ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807ZS

IRF2807ZS

MOSFET N-CH 75V 75A D2PAK

Infineon Technologies
3,081 -

RFQ

IRF2807ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 9.4mOhm @ 53A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3270 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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