Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP6676S

FDP6676S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
1,485 -

RFQ

FDP6676S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 76A (Ta) 4.5V, 10V 6.5mOhm @ 38A, 10V 3V @ 1mA 56 nC @ 5 V ±16V 4853 pF @ 15 V - 70W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK3570-ZK-E1-AZ

2SK3570-ZK-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
800 -

RFQ

2SK3570-ZK-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NP40N055KHE-E1-AZ

NP40N055KHE-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
800 -

RFQ

NP40N055KHE-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQI9N50TU

FQI9N50TU

MOSFET N-CH 500V 9A I2PAK

Fairchild Semiconductor
756 -

RFQ

FQI9N50TU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75842S3S

HUFA75842S3S

MOSFET N-CH 150V 43A D2PAK

Fairchild Semiconductor
542 -

RFQ

HUFA75842S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB9N50TM

FQB9N50TM

MOSFET N-CH 500V 9A D2PAK

Fairchild Semiconductor
485 -

RFQ

FQB9N50TM

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 730mOhm @ 4.5A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 3.13W (Ta), 147W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPAN60R360P7SXKSA1

IPAN60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

Infineon Technologies
500 -

RFQ

IPAN60R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IRL6283MTRPBF

IRL6283MTRPBF

DIRECTFET N-CHANNEL POWER MOSFET

International Rectifier
4,800 -

RFQ

IRL6283MTRPBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 20 V 38A (Ta), 211A (Tc) 2.5V, 4.5V 0.75mOhm @ 50A, 10V 1.1V @ 100µA 158 nC @ 4.5 V ±12V 8292 pF @ 10 V - 2.1W (Ta), 63W (Tc) -40°C ~ 150°C (TJ) Surface Mount
2SJ529-91L-E

2SJ529-91L-E

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,387 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FSS163-TL-E

FSS163-TL-E

4V DRIVE SERIES

onsemi
6,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFD16N05

RFD16N05

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,936 -

RFQ

RFD16N05

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76432S3ST

HUF76432S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,124 -

RFQ

HUF76432S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 59A (Tc) 4.5V, 10V 17mOhm @ 59A, 10V 3V @ 250µA 53 nC @ 10 V ±16V 1765 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU120ATU

IRFU120ATU

MOSFET N-CH 100V 8.4A IPAK

Fairchild Semiconductor
2,580 -

RFQ

IRFU120ATU

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.4A (Tc) 10V 200mOhm @ 4.2A, 10V 4V @ 250µA 22 nC @ 10 V - 480 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD311

IRFD311

N-CHANNEL POWER MOSFET

Harris Corporation
1,332 -

RFQ

IRFD311

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 3.6Ohm @ 200mA, 10V 4V @ 250µA 7.5 nC @ 10 V ±20V 135 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S530

RF1S530

N-CHANNEL POWER MOSFET

Harris Corporation
1,190 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB03N03LAG

IPB03N03LAG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

IPB03N03LAG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 55A, 10V 2V @ 100µA 57 nC @ 5 V ±20V 7027 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF234

IRF234

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
789 -

RFQ

IRF234

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

NTE Electronics, Inc
639 -

RFQ

BS170

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
IRF843

IRF843

N-CHANNEL POWER MOSFET

Harris Corporation
700 -

RFQ

IRF843

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 7A (Tc) 10V 1.1Ohm @ 4.4A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1225 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF232

IRFF232

N-CHANNEL POWER MOSFET

Harris Corporation
341 -

RFQ

IRFF232

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 4.5A (Tc) - - - - - - - 25W - Through Hole
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1500+ Média diária de RFQ
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1800+
1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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