Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFD310

IRFD310

0.4A 400V 3.600 OHM N-CHANNEL

Harris Corporation
3,189 -

RFQ

IRFD310

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 350mA (Ta) 10V 3.6Ohm @ 210mA, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
RQM2201DNSWS#P1

RQM2201DNSWS#P1

N CH MOS FET POWER SWITCHING

Renesas Electronics America Inc
1,970 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FQPF34N20L

FQPF34N20L

MOSFET N-CH 200V 17.5A TO220F

Fairchild Semiconductor
764 -

RFQ

FQPF34N20L

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 17.5A (Tc) 5V, 10V 75mOhm @ 8.75A, 10V 2V @ 250µA 72 nC @ 5 V ±20V 3900 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF360N65S3R0L-F154

FCPF360N65S3R0L-F154

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
769 -

RFQ

FCPF360N65S3R0L-F154

Ficha técnica

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 10A (Tj) 10V 360mOhm @ 5A, 10V 4.5V @ 200µA 18 nC @ 10 V ±30V 730 pF @ 400 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI034NE7N3G

IPI034NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
7,234 -

RFQ

IPI034NE7N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF431

IRF431

MOSFET N-CH 450V 4.5A TO3

International Rectifier
1,201 -

RFQ

IRF431

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 4.5A - 1.5Ohm @ 2.5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 800 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP89N06PDK-E1-AY

NP89N06PDK-E1-AY

P-TRS2 AUTOMOTIVE MOS

Renesas Electronics America Inc
768 -

RFQ

NP89N06PDK-E1-AY

Ficha técnica

Tray Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tc) 4.5V, 10V 5.3mOhm @ 45A, 10V 2.5V @ 250µA 95 nC @ 10 V ±20V 6000 pF @ 25 V - 1.8W (Ta), 147W (Tc) 175°C Surface Mount
R8002KNXC7G

R8002KNXC7G

800V 1.6A, TO-220FM, HIGH-SPEED

Rohm Semiconductor
965 -

RFQ

R8002KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.6A (Ta) 10V 4.2Ohm @ 800mA, 10V 4.5V @ 150µA 7.5 nC @ 10 V ±20V 140 pF @ 100 V - 28W (Tc) 150°C (TJ) Through Hole
STF16N60M2

STF16N60M2

MOSFET N-CH 600V 12A TO220FP

STMicroelectronics
231 -

RFQ

STF16N60M2

Ficha técnica

Tube MDmesh™ M2 Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 19 nC @ 10 V ±25V 700 pF @ 100 V - 25W (Tc) 150°C (TJ) Through Hole
HUF76437P3

HUF76437P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,200 -

RFQ

HUF76437P3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 71A (Tc) 4.5V, 10V 14mOhm @ 71A, 10V 3V @ 250µA 71 nC @ 10 V ±16V 2230 pF @ 25 V - 155W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75339P3

HUFA75339P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
2,440 -

RFQ

HUFA75339P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80N06S-08

SPP80N06S-08

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

SPP80N06S-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK0380DPA-WS#J53

RJK0380DPA-WS#J53

POWER TRANSISTOR, MOSFET

Renesas Electronics America Inc
320 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HAT2201WP-EL-E

HAT2201WP-EL-E

15A, 100V, N-CHANNEL MOSFET

Renesas Electronics America Inc
2,500 -

RFQ

HAT2201WP-EL-E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta) - 43mOhm @ 7.5A, 10V - 21 nC @ 10 V - 1450 pF @ 10 V - - 150°C (TJ) Surface Mount
IPA040N06NM5SXKSA1

IPA040N06NM5SXKSA1

MOSFET N-CH 60V 72A TO220

Infineon Technologies
495 -

RFQ

IPA040N06NM5SXKSA1

Ficha técnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 6V, 10V 4mOhm @ 72A, 10V 3.3V @ 50µA 50 nC @ 10 V ±20V 3500 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1335-90L

2SK1335-90L

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,970 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2803T1L-E2-AY

UPA2803T1L-E2-AY

MOSFET N-CH 20V 20A 8DFN

Renesas Electronics America Inc
9,000 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Ta) - 5.8mOhm @ 20A, 4.5V 1.5V @ 1mA 20 nC @ 4 V - 2450 pF @ 10 V - - - Surface Mount
NTD6N40-001

NTD6N40-001

NFET DPAK 400V 1.1R

onsemi
6,300 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK03P6DPA-WS#J5A

RJK03P6DPA-WS#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,750 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK0226DNS-WS#J5

RJK0226DNS-WS#J5

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 42446 Record«Prev1... 5354555657585960...2123Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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