Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDPF12N50T

FDPF12N50T

MOSFET N-CH 500V 11.5A TO220F

onsemi
1,000 -

RFQ

FDPF12N50T

Ficha técnica

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1315 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75332P3

HUF75332P3

MOSFET N-CH 55V 60A TO220-3

onsemi
562 -

RFQ

HUF75332P3

Ficha técnica

Tube UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP380N60

FCP380N60

MOSFET N-CH 600V 10.2A TO220-3

onsemi
2,644 -

RFQ

FCP380N60

Ficha técnica

Tube,Tube SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 40 nC @ 10 V ±20V 1665 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF13N50FT

FDPF13N50FT

MOSFET N-CH 500V 12A TO220F

onsemi
915 -

RFQ

FDPF13N50FT

Ficha técnica

Tube UniFET™ Last Time Buy N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 540mOhm @ 6A, 10V 5V @ 250µA 39 nC @ 10 V ±30V 1930 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF27N25

FQPF27N25

MOSFET N-CH 250V 14A TO220F

onsemi
1,000 -

RFQ

FQPF27N25

Ficha técnica

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 110mOhm @ 7A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 2450 pF @ 25 V - 55W (Tc) -55°C ~ 150°C (TJ) Through Hole
TF412T5G

TF412T5G

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,581 -

RFQ

TF412T5G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQP13N50C-G

FQP13N50C-G

N-CHANNEL QFET MOSFET 500V, 13A

onsemi
2,573 -

RFQ

Tube QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 480mOhm @ 6.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 195W (Tc) -55°C ~ 150°C (TJ)
FDS4470

FDS4470

POWER FIELD-EFFECT TRANSISTOR, 1

onsemi
2,699 -

RFQ

FDS4470

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 12.5A (Ta) 10V 9mOhm @ 12.5A, 10V 5V @ 250µA 63 nC @ 10 V +30V, -20V 2659 pF @ 20 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
3LN01S-TL-E

3LN01S-TL-E

3LN01 - 30 VOLT, 0.15 A, 3.7 OHM

onsemi
3,181 -

RFQ

3LN01S-TL-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDS8984-F085

FDS8984-F085

N-CHANNEL POWERTRENCH MOSFET 30V

onsemi
3,502 -

RFQ

FDS8984-F085

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NTPF110N65S3HF

NTPF110N65S3HF

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
3,425 -

RFQ

NTPF110N65S3HF

Ficha técnica

Bulk FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 30A (Tc) 10V 110mOhm @ 15A, 10V 5V @ 740µA 62 nC @ 10 V ±30V 2635 pF @ 400 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
NVMFD5852NLT1G

NVMFD5852NLT1G

POWER MOSFET 40V, 44A, 6.9 MOHM

onsemi
3,432 -

RFQ

NVMFD5852NLT1G

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
FDMC7200

FDMC7200

SMALL SIGNAL FIELD-EFFECT TRANSI

onsemi
3,520 -

RFQ

FDMC7200

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMC6696P

FDMC6696P

FDMC6696 - P-CHANNEL POWERTRENCH

onsemi
2,089 -

RFQ

FDMC6696P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS86500DC

FDMS86500DC

N-CHANNEL DUAL COOLTM 56 POWER T

onsemi
3,887 -

RFQ

FDMS86500DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 29A (Ta), 108A (Tc) 8V, 10V 2.3mOhm @ 29A, 10V 4.5V @ 250µA 107 nC @ 10 V ±20V 7680 pF @ 30 V - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CPH3360-TL-W

CPH3360-TL-W

CPH3360 - P-CHANNEL POWER MOSFET

onsemi
3,168 -

RFQ

CPH3360-TL-W

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4V, 10V 303mOhm @ 800mA, 10V 2.6V @ 1mA 2.2 nC @ 10 V ±20V 82 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ECH8654-TL-HQ

ECH8654-TL-HQ

ECH8654 - MOSFET 2 P-CHANNEL ARR

onsemi
2,180 -

RFQ

ECH8654-TL-HQ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FCB199N65S3

FCB199N65S3

POWER MOSFET, N-CHANNEL, SUPERFE

onsemi
2,009 -

RFQ

FCB199N65S3

Ficha técnica

Bulk SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 14A (Tc) 10V 199mOhm @ 7A, 10V 4.5V @ 1.4mA 30 nC @ 10 V ±30V 1225 pF @ 400 V - 98W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NVMFD5C478NLWFT1G

NVMFD5C478NLWFT1G

DUAL N-CHANNEL POWER MOSFET 40 V

onsemi
3,607 -

RFQ

NVMFD5C478NLWFT1G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NVMFS6B05NLWFT3G

NVMFS6B05NLWFT3G

NVMFS6B05 - SINGLE N-CHANNEL POW

onsemi
2,445 -

RFQ

NVMFS6B05NLWFT3G

Ficha técnica

Bulk Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 100 V 114A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 3V @ 250µA 6.8 nC @ 10 V ±16V 3980 pF @ 25 V - 3.8W (Ta), 165W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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