Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLR3114ZPBF

IRLR3114ZPBF

MOSFET N-CH 40V 42A DPAK

International Rectifier
2,281 -

RFQ

IRLR3114ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 4.5V, 10V 4.9mOhm @ 42A, 10V 2.5V @ 100µA 56 nC @ 4.5 V ±16V 3810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6724MTRPBF

IRF6724MTRPBF

MOSFET N-CH 30V 27A/150A DIRECT

International Rectifier
3,407 -

RFQ

IRF6724MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Ta), 150A (Tc) 4.5V, 10V 2.5mOhm @ 27A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 4404 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF4905

AUIRF4905

AUIRF4905 - 20V-150V P-CHANNEL A

International Rectifier
2,370 -

RFQ

AUIRF4905

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR1205TRPBF

IRFR1205TRPBF

IRFR1205 - 12V-300V N-CHANNEL PO

International Rectifier
2,023 -

RFQ

IRFR1205TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS6535TRL

AUIRFS6535TRL

MOSFET N-CH 300V 19A D2PAK

International Rectifier
2,874 -

RFQ

AUIRFS6535TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU7843PBF

IRLU7843PBF

MOSFET N-CH 30V 161A IPAK

International Rectifier
3,806 -

RFQ

IRLU7843PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 161A (Tc) - 3.3mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4380 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7736M2TR

AUIRF7736M2TR

MOSFET N-CH 40V 22A/108A DIRECT

International Rectifier
2,145 -

RFQ

AUIRF7736M2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 22A (Ta), 108A (Tc) 10V 3mOhm @ 65A, 10V 4V @ 150µA 108 nC @ 10 V ±20V 4267 pF @ 25 V - 2.5W (Ta), 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFB8407

AUIRFB8407

MOSFET N-CH 40V 195A TO220AB

International Rectifier
2,985 -

RFQ

AUIRFB8407

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 100A, 10V 4V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLS3036TRL

AUIRLS3036TRL

MOSFET N-CH 60V 195A D2PAK

International Rectifier
3,507 -

RFQ

AUIRLS3036TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF6215

AUIRF6215

MOSFET P-CH 150V 13A TO220AB

International Rectifier
2,025 -

RFQ

AUIRF6215

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR120NTRRPBF

IRFR120NTRRPBF

MOSFET N-CH 100V 9.4A DPAK

International Rectifier
2,566 -

RFQ

IRFR120NTRRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Tc) 10V 210mOhm @ 5.6A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 48W (Tc) - Surface Mount
IRFR1010ZTRLPBF

IRFR1010ZTRLPBF

MOSFET N-CH 55V 42A DPAK

International Rectifier
2,446 -

RFQ

IRFR1010ZTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3006TRLPBF

IRFS3006TRLPBF

IRFS3006 - HEXFET N-CHANNEL POWE

International Rectifier
2,531 -

RFQ

IRFS3006TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 10V 2.5mOhm @ 170A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 8970 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFSL3207ZPBF

IRFSL3207ZPBF

IRFSL3207 - 12V-300V N-CHANNEL P

International Rectifier
3,317 -

RFQ

IRFSL3207ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 4.1mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6920 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR4104TRLPBF

IRFR4104TRLPBF

MOSFET N-CH 40V 42A DPAK

International Rectifier
2,691 -

RFQ

IRFR4104TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 5.5mOhm @ 42A, 10V 4V @ 250µA 89 nC @ 10 V ±20V 2950 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFH8337TRPBF

IRFH8337TRPBF

MOSFET N-CH 30V 12A/35A PQFN

International Rectifier
2,617 -

RFQ

IRFH8337TRPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) 4.5V, 10V 12.8mOhm @ 16.2A, 10V 2.35V @ 25µA 10 nC @ 10 V ±20V 790 pF @ 10 V - 3.2W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7833TRLPBF

IRLR7833TRLPBF

MOSFET N-CH 30V 140A DPAK

International Rectifier
2,623 -

RFQ

IRLR7833TRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLZ44Z

AUIRLZ44Z

MOSFET N-CH 55V 51A TO220AB

International Rectifier
3,686 -

RFQ

AUIRLZ44Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 4.5V, 10V 13.5mOhm @ 31A, 10V 3V @ 250µA 36 nC @ 5 V ±16V 1620 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF8788PBF

IRF8788PBF

MOSFET N-CH 30V 24A 8SO

International Rectifier
2,439 -

RFQ

IRF8788PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta) 4.5V, 10V 2.8mOhm @ 24A, 10V 2.35V @ 100µA 66 nC @ 4.5 V ±20V 5720 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRF4905STRL

AUIRF4905STRL

AUIRF4905S - 20V-150V P-CHANNEL

International Rectifier
2,107 -

RFQ

AUIRF4905STRL

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 20mOhm @ 42A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3500 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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