Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RJK1001DPN-E0#T2

RJK1001DPN-E0#T2

MOSFET N-CH 100V 80A TO220AB

Renesas Electronics America Inc
3,363 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 80A (Ta) - 5.5mOhm @ 40A, 10V - 147 nC @ 10 V - 10 pF @ 10 V - 200W (Tc) 150°C (TJ) Through Hole
NP161N04TUG-E1-AY

NP161N04TUG-E1-AY

MOSFET N-CH 40V 160A TO263-7

Renesas Electronics America Inc
3,200 -

RFQ

NP161N04TUG-E1-AY

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) - 1.8mOhm @ 80A, 10V 4V @ 250µA 345 nC @ 10 V - 20.25 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) Surface Mount
2SK3299B-S19-AY

2SK3299B-S19-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
22,000 -

RFQ

2SK3299B-S19-AY

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NE5550279A-T1A-A

NE5550279A-T1A-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
40,000 -

RFQ

NE5550279A-T1A-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NE5550779A-T1A-A

NE5550779A-T1A-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
29,836 -

RFQ

NE5550779A-T1A-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
H7N0608LS90TL

H7N0608LS90TL

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
11,980 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
H7N0608LS90TL-E

H7N0608LS90TL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
2,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJL5012DPP-00#T2

RJL5012DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
28,718 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP36P06SLG-E1-AY

NP36P06SLG-E1-AY

MOSFET P-CH 60V 36A TO252

Renesas Electronics America Inc
2,913 -

RFQ

NP36P06SLG-E1-AY

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 60 V 36A (Tc) 4.5V, 10V 30mOhm @ 18A, 10V - 52 nC @ 10 V ±20V 3200 pF @ 10 V - 1.2W (Ta), 56W (Tc) 175°C (TJ) Surface Mount
2SK1401A-E

2SK1401A-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,991 -

RFQ

2SK1401A-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK60S4DPP-E0#T2

RJK60S4DPP-E0#T2

MOSFET N-CH 600V 16A TO220FP

Renesas Electronics America Inc
114,548 -

RFQ

RJK60S4DPP-E0#T2

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) - 290mOhm @ 8A, 10V - 18 nC @ 10 V - 988 pF @ 25 V Super Junction 29.9W (Tc) 150°C (TJ) Through Hole
2SK1567-04-E

2SK1567-04-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
16,233 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HAF2012-92L

HAF2012-92L

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,881 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA1556AH-AZ

UPA1556AH-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
22,351 -

RFQ

UPA1556AH-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK1620L-E

2SK1620L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,289 -

RFQ

2SK1620L-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HAF1002-92L

HAF1002-92L

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,163 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP100N04PUK(1)-E1-AY

NP100N04PUK(1)-E1-AY

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,600 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RJK6013DPP-00#T2

RJK6013DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
36,564 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1636L-E

2SK1636L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,015 -

RFQ

2SK1636L-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK2729-E

2SK2729-E

MOSFET N-CH 500V 20A TO3P

Renesas Electronics America Inc
1,337 -

RFQ

2SK2729-E

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Ta) - 290mOhm @ 10A, 10V 3.5V @ 1mA 55 nC @ 10 V ±30V 3300 pF @ 10 V - 150W (Ta) 150°C Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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