Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TSM9435CS RLG

TSM9435CS RLG

MOSFET P-CHANNEL 30V 5.3A 8SOP

Taiwan Semiconductor Corporation
1,381 -

RFQ

TSM9435CS RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Tc) 4.5V, 10V 60mOhm @ 5.3A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 551.57 pF @ 15 V - 5.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N1R2CH C5G

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation
3,474 -

RFQ

TSM80N1R2CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V 4V @ 250µA 19.4 nC @ 10 V ±30V 685 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM4800N15CX6 RFG

TSM4800N15CX6 RFG

MOSFET N-CH 150V 1.4A SOT26

Taiwan Semiconductor Corporation
2,420 -

RFQ

TSM4800N15CX6 RFG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 150 V 1.4A (Tc) 6V, 10V 480mOhm @ 1.1A, 10V 3.5V @ 250µA 8 nC @ 10 V ±20V 332 pF @ 10 V - 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM80N950CH C5G

TSM80N950CH C5G

MOSFET N-CHANNEL 800V 6A TO251

Taiwan Semiconductor Corporation
3,701 -

RFQ

TSM80N950CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 950mOhm @ 3A, 10V 4V @ 250µA 19.6 nC @ 10 V ±30V 691 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM080N03PQ56 RLG

TSM080N03PQ56 RLG

MOSFET N-CH 30V 73A 8PDFN

Taiwan Semiconductor Corporation
2,475 -

RFQ

TSM080N03PQ56 RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 73A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V 2.5V @ 250µA 14.4 nC @ 10 V ±20V 843 pF @ 15 V - 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM018NA03CR RLG

TSM018NA03CR RLG

MOSFET N-CH 30V 185A 8PDFN

Taiwan Semiconductor Corporation
2,238 -

RFQ

TSM018NA03CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 185A (Tc) 4.5V, 10V 1.8mOhm @ 29A, 10V 2.5V @ 250µA 56 nC @ 10 V ±20V 3479 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM150NB04LCR RLG

TSM150NB04LCR RLG

MOSFET N-CH 40V 10A/41A 8PDFN

Taiwan Semiconductor Corporation
1,876 -

RFQ

TSM150NB04LCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 10A (Ta), 41A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 18 nC @ 10 V ±20V 966 pF @ 20 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM055N03PQ56 RLG

TSM055N03PQ56 RLG

MOSFET N-CH 30V 80A 8PDFN

Taiwan Semiconductor Corporation
2,344 -

RFQ

TSM055N03PQ56 RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 5.5mOhm @ 20A, 10V 2.5V @ 250µA 11.1 nC @ 4.5 V ±20V 1160 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM090N03CP ROG

TSM090N03CP ROG

MOSFET N-CHANNEL 30V 50A TO252

Taiwan Semiconductor Corporation
2,314 -

RFQ

TSM090N03CP ROG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V 2.5V @ 250µA 45 nC @ 4.5 V ±20V 750 pF @ 25 V - 40W (Tc) 150°C (TJ) Surface Mount
TSM024NA04LCR RLG

TSM024NA04LCR RLG

MOSFET N-CH 40V 170A 8PDFN

Taiwan Semiconductor Corporation
2,126 -

RFQ

TSM024NA04LCR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 170A (Tc) 4.5V, 10V 2.4mOhm @ 25A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 4224 pF @ 20 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM060N03PQ33 RGG

TSM060N03PQ33 RGG

MOSFET N-CH 30V 62A 8PDFN

Taiwan Semiconductor Corporation
3,760 -

RFQ

TSM060N03PQ33 RGG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.5V @ 250µA 25.4 nC @ 10 V ±20V 1342 pF @ 15 V - 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM300NB06CR RLG

TSM300NB06CR RLG

MOSFET N-CH 60V 6A/27A 8PDFN

Taiwan Semiconductor Corporation
4,666 -

RFQ

TSM300NB06CR RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 6A (Ta), 27A (Tc) 10V 30mOhm @ 6A, 10V 4.5V @ 250µA 18 nC @ 10 V ±20V 1110 pF @ 30 V - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TSM080N03EPQ56 RLG

TSM080N03EPQ56 RLG

MOSFET N-CH 30V 55A 8PDFN

Taiwan Semiconductor Corporation
4,505 -

RFQ

TSM080N03EPQ56 RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Tc) 4.5V, 10V 8mOhm @ 16A, 10V 2.5V @ 250µA 7.5 nC @ 4.5 V ±20V 750 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM70N600CI C0G

TSM70N600CI C0G

MOSFET N-CH 700V 8A ITO220AB

Taiwan Semiconductor Corporation
2,066 -

RFQ

TSM70N600CI C0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 4A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM950N10CW RPG

TSM950N10CW RPG

MOSFET N-CH 100V 6.5A SOT223

Taiwan Semiconductor Corporation
1,415 -

RFQ

TSM950N10CW RPG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 4.5V, 10V 95mOhm @ 5A, 10V 2.5V @ 250µA 9.3 nC @ 10 V ±20V 1480 pF @ 50 V - 9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TSM70N600ACL X0G

TSM70N600ACL X0G

MOSFET N-CH 700V 8A TO262S

Taiwan Semiconductor Corporation
2,807 -

RFQ

TSM70N600ACL X0G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 700 V 8A (Tc) 10V 600mOhm @ 2.4A, 10V 4V @ 250µA 12.6 nC @ 10 V ±30V 743 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM1NB60CH C5G

TSM1NB60CH C5G

MOSFET N-CHANNEL 600V 1A TO251

Taiwan Semiconductor Corporation
1,550 -

RFQ

TSM1NB60CH C5G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 1A (Tc) 10V 10Ohm @ 500mA, 10V 4.5V @ 250µA 6.1 nC @ 10 V ±30V 138 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
TSM16ND50CI C0G

TSM16ND50CI C0G

MOSFET N-CH 500V 16A ITO220

Taiwan Semiconductor Corporation
2,651 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 350mOhm @ 4A, 10V 4.5V @ 250µA 53 nC @ 10 V ±30V 2551 pF @ 50 V - 59.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
TQM250NB06CR RLG

TQM250NB06CR RLG

MOSFET N-CH 60V 7A/32A 8PDFNU

Taiwan Semiconductor Corporation
2,436 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta), 32A (Tc) 7V, 10V 25mOhm @ 7A, 10V 3.8V @ 250µA 24 nC @ 10 V ±20V 1396 pF @ 30 V - 3.1W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount, Wettable Flank
TSM120N06LCS RLG

TSM120N06LCS RLG

MOSFET N-CHANNEL 60V 23A 8SOP

Taiwan Semiconductor Corporation
1,329 -

RFQ

TSM120N06LCS RLG

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 23A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 37 nC @ 10 V ±20V 2193 pF @ 30 V - 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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