Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TK190A65Z,S4X

TK190A65Z,S4X

MOSFET N-CH 650V 15A TO220SIS

Toshiba Semiconductor and Storage
175 -

RFQ

TK190A65Z,S4X

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 190mOhm @ 7.5A, 10V 4V @ 610µA 25 nC @ 10 V ±30V 1370 pF @ 300 V - 40W (Tc) 150°C Through Hole
FDS7060N7

FDS7060N7

MOSFET N-CH 30V 19A 8SO

Fairchild Semiconductor
8,663 -

RFQ

FDS7060N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta) 4.5V, 10V 5mOhm @ 19A, 10V 3V @ 250µA 56 nC @ 5 V ±20V 3274 pF @ 15 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF542

IRF542

N-CHANNEL POWER MOSFET

Harris Corporation
7,679 -

RFQ

IRF542

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP246

IRFP246

N-CHANNEL POWER MOSFET

Harris Corporation
5,674 -

RFQ

IRFP246

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 15A (Tc) 10V 280mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF12N60C-FS

FQPF12N60C-FS

12A, 600V, 0.65OHM, N-CHANNEL

Fairchild Semiconductor
2,700 -

RFQ

FQPF12N60C-FS

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 2290 pF @ 25 V - 51W (Tc) -55°C ~ 150°C (TJ)
IRF3808PBF

IRF3808PBF

MOSFET N-CH 75V 140A TO220AB

Infineon Technologies
206 -

RFQ

IRF3808PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
STP150NF04

STP150NF04

MOSFET N-CH 40V 80A TO220AB

STMicroelectronics
826 -

RFQ

STP150NF04

Ficha técnica

Tube STripFET™ II Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 7mOhm @ 40A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3650 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S70N03

RF1S70N03

MOSFET N-CH 30V 70A TO262AA

Harris Corporation
789 -

RFQ

RF1S70N03

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V ±20V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTP190N65S3HF

NTP190N65S3HF

MOSFET N-CH 650V 20A TO220-3

onsemi
312 -

RFQ

NTP190N65S3HF

Ficha técnica

Tube FRFET®, SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 430µA 34 nC @ 10 V ±30V 1610 pF @ 400 V - 162W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA7N90

FQA7N90

MOSFET N-CH 900V 7.4A TO3P

Fairchild Semiconductor
939 -

RFQ

FQA7N90

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 900 V 7.4A (Tc) 10V 1.55Ohm @ 3.7A, 10V 5V @ 250µA 59 nC @ 10 V ±30V 2280 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SJ350

2SJ350

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
652 -

RFQ

2SJ350

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDB8442-F085-FS

FDB8442-F085-FS

28A, 40V, 0.0029OHM, N-CHANNEL

Fairchild Semiconductor
351 -

RFQ

FDB8442-F085-FS

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 28A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V 4V @ 250µA 235 nC @ 10 V ±20V 12200 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ)
IRFB9N60APBF-BE3

IRFB9N60APBF-BE3

MOSFET N-CH 600V 9.2A TO220AB

Vishay Siliconix
3,606 -

RFQ

IRFB9N60APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) - 750mOhm @ 5.5A, 10V 4V @ 250µA 49 nC @ 10 V ±30V 1400 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
R8008ANJGTL

R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Rohm Semiconductor
1,000 -

RFQ

R8008ANJGTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 1.03Ohm @ 4A, 10V 5V @ 1mA 38 nC @ 10 V ±30V 1100 pF @ 25 V - 195W (Tc) 150°C (TJ) Surface Mount
2SK3225-Z-AZ

2SK3225-Z-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics America Inc
761 -

RFQ

2SK3225-Z-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFF9232

IRFF9232

P-CHANNEL POWER MOSFET

Harris Corporation
582 -

RFQ

IRFF9232

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - - - - - - - 25W - Through Hole
RFM12P08

RFM12P08

P-CHANNEL POWER MOSFET

Harris Corporation
358 -

RFQ

RFM12P08

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK155A65Z,S4X

TK155A65Z,S4X

MOSFET N-CH 650V 18A TO220SIS

Toshiba Semiconductor and Storage
2,633 -

RFQ

TK155A65Z,S4X

Ficha técnica

Tube DTMOSVI Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Ta) 10V 155mOhm @ 9A, 10V 4V @ 730µA 29 nC @ 10 V ±30V 1635 pF @ 300 V - 40W (Tc) 150°C Through Hole
2SK3814-AZ

2SK3814-AZ

MOSFET N-CH 60V 60A TO251

Renesas Electronics America Inc
6,430 -

RFQ

2SK3814-AZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) - 8.7mOhm @ 30A, 10V - 95 nC @ 10 V - 5450 pF @ 10 V - 1W (Ta), 84W (Tc) 150°C (TJ) Through Hole
IPB051NE8NG

IPB051NE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies
775 -

RFQ

IPB051NE8NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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