+86 075582561136
Carregar BOM
Transistores - IGBTs - Módulos
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | IGBTType | Configuration | Voltage-CollectorEmitterBreakdown(Max) | Current-Collector(Ic)(Max) | Power-Max | Vce(on)(Max)@VgeIc | Current-CollectorCutoff(Max) | InputCapacitance(Cies)@Vce | Input | NTCThermistor | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FMG1G150US60HIGBT, 150A, 600V, N-CHANNEL Fairchild Semiconductor |
2,213 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | - | Single | 600 V | 150 A | 595 W | 2.7V @ 15V, 150A | 250 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
FMG1G150US60LIGBT, 150A, 600V, N-CHANNEL Fairchild Semiconductor |
2,441 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | - | Single | 600 V | 150 A | 595 W | 2.7V @ 15V, 150A | 250 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
MID100-12A3IGBT MODULE 1200V 135A 560W Y4M5 IXYS |
2,110 | - |
RFQ |
Ficha técnica |
Box | - | Active | NPT | Single | 1200 V | 135 A | 560 W | 2.7V @ 15V, 75A | 5 mA | 5.5 nF @ 25 V | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
|
F3L75R12W1H3BPSA1LOW POWER EASY AG-EASY1B-311 Infineon Technologies |
3,070 | - |
RFQ |
Tray | - | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
BSM50GP60B2BOSA1IGBT MODULE Infineon Technologies |
3,914 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
NXH80B120MNQ0SNGPIM POWER MODULE onsemi |
3,019 | - |
RFQ |
Ficha técnica |
Tray | - | Active | - | Dual Boost Chopper | - | - | 69 W | - | - | - | Standard | Yes | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
VS-ENY050C60POWER MODULE Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Ficha técnica |
Box | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
VS-40MT120PHAPBFMTP - HALF BRIDGE IGBT Vishay General Semiconductor - Diodes Division |
3,885 | - |
RFQ |
Ficha técnica |
Tube | - | Active | Trench Field Stop | Half Bridge | 1200 V | 75 A | 305 W | 2.65V @ 15V, 40A | 50 µA | 3.2 nF @ 25 V | Standard | No | -40°C ~ 150°C (TJ) | Through Hole |
|
|
FMG1G200US60HIGBT, 200A, 600V, N-CHANNEL Fairchild Semiconductor |
3,004 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | - | Single | 600 V | 200 A | 695 W | 2.7V @ 15V, 200A | 250 µA | - | Standard | No | -40°C ~ 150°C (TJ) | Chassis Mount |
|
VS-GT140DA60UIGBT MOD 600V 200A 652W SOT227 Vishay General Semiconductor - Diodes Division |
160 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | Trench | Single | 600 V | 200 A | 652 W | 2V @ 15V, 100A | 100 µA | - | Standard | No | -40°C ~ 175°C (TJ) | Chassis Mount |
|
FS50R12W1T7BOMA1LOW POWER EASY AG-EASY1B-1 Infineon Technologies |
2,994 | - |
RFQ |
Ficha técnica |
Tray | EasyPACK™ | Active | Trench Field Stop | Three Phase Inverter | 1200 V | 50 A | 20 mW | - | 7.9 µA | 11.1 nF @ 25 V | Standard | Yes | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
MIXA40W1200TEDIGBT MODULE 1200V 60A 195W E2 IXYS |
2,794 | - |
RFQ |
Ficha técnica |
Box | - | Active | PT | Three Phase Inverter with Brake | 1200 V | 60 A | 195 W | 2.1V @ 15V, 35A | 2.1 mA | - | Standard | Yes | -40°C ~ 125°C (TJ) | Chassis Mount |
|
|
FS50R12W1T7PB11BPSA1LOW POWER EASY AG-EASY1B-711 Infineon Technologies |
2,369 | - |
RFQ |
Tray | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | |
|
|
FP35R12W2T7BPSA1LOW POWER EASY AG-EASY2B-711 Infineon Technologies |
2,190 | - |
RFQ |
Ficha técnica |
Tray | EasyPIM™ | Active | Trench Field Stop | Three Phase Inverter | 1200 V | 35 A | 20 mW | - | 5.8 µA | 6.62 nF @ 25 V | Three Phase Bridge Rectifier | Yes | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
NXH50M65L4C2SG650V 50A CONVERTER-INVERTER-PFCS onsemi |
3,844 | - |
RFQ |
Ficha técnica |
Tube | - | Active | - | Three Phase Inverter | 650 V | 50 A | 20 mW | 2.2V @ 15V, 75A | 250 µA | 4.877 nF @ 20 V | Single Phase Bridge Rectifier | Yes | -40°C ~ 150°C (TJ) | Through Hole |
|
|
FS50R12W2T7BPSA1LOW POWER EASY AG-EASY2B-711 Infineon Technologies |
2,649 | - |
RFQ |
Ficha técnica |
Tray | EasyPACK™, TRENCHSTOP™ | Active | Trench Field Stop | Three Phase Inverter | 1200 V | 50 A | 20 mW | - | 7.9 µA | 11.1 nF @ 25 V | Standard | Yes | -40°C ~ 175°C (TJ) | Chassis Mount |
|
|
VS-ENM040M60PPOWER MODULE Vishay General Semiconductor - Diodes Division |
2,999 | - |
RFQ |
Ficha técnica |
Box | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
VS-ENZ025C60NPOWER MODULE Vishay General Semiconductor - Diodes Division |
3,924 | - |
RFQ |
Ficha técnica |
Box | * | Active | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
MUBW10-12A7IGBT MODULE 1200V 20A 105W E2 IXYS |
3,711 | - |
RFQ |
Ficha técnica |
Bulk | - | Active | NPT | Three Phase Inverter with Brake | 1200 V | 20 A | 105 W | 2.7V @ 15V, 10A | 600 µA | 600 pF @ 25 V | Three Phase Bridge Rectifier | Yes | -40°C ~ 125°C (TJ) | Chassis Mount |
|
|
NXH50M65L4C2ESG650V 50A CONVERTER-INVERTER-PFCS onsemi |
2,610 | - |
RFQ |
Ficha técnica |
Tube | - | Active | - | Three Phase Inverter | 650 V | 50 A | 20 mW | 2.2V @ 15V, 75A | 250 µA | 2.608 nF @ 20 V | Single Phase Bridge Rectifier | Yes | -40°C ~ 150°C (TJ) | Through Hole |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
