Transistores - IGBTs - Módulos

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
APTGT75H60T1G

APTGT75H60T1G

IGBT MODULE 600V 100A 250W SP1

Microchip Technology
2,060 -

RFQ

APTGT75H60T1G

Ficha técnica

Bulk - Active Trench Field Stop Full Bridge Inverter 600 V 100 A 250 W 1.9V @ 15V, 75A 250 µA 4.62 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
APTGT30X60T3G

APTGT30X60T3G

IGBT MODULE 600V 50A 90W SP3

Microchip Technology
2,922 -

RFQ

APTGT30X60T3G

Ficha técnica

Bulk - Active Trench Field Stop Three Phase Inverter 600 V 50 A 90 W 1.9V @ 15V, 30A 250 µA 1.6 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
FS3L25R12W2H3B11BPSA1

FS3L25R12W2H3B11BPSA1

IGBT MOD 1200V 40A 175W

Infineon Technologies
2,430 -

RFQ

FS3L25R12W2H3B11BPSA1

Ficha técnica

Tray EasyPACK™ Active - Three Level Inverter 1200 V 40 A 175 W 2.4V @ 15V, 25A 1 mA 1.45 nF @ 25 V Standard Yes -40°C ~ 150°C Chassis Mount
NXH027B120MNF2PTG

NXH027B120MNF2PTG

IGBT MODULE 1200V

onsemi
3,386 -

RFQ

Tape & Reel (TR) - Active - - - - - - - - - - - -
APTGT50DDA120T3G

APTGT50DDA120T3G

IGBT MODULE 1200V 75A 270W SP3

Microchip Technology
3,637 -

RFQ

APTGT50DDA120T3G

Ficha técnica

Bulk - Active Trench Field Stop Dual Boost Chopper 1200 V 75 A 270 W 2.1V @ 15V, 50A 250 µA 3.6 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
FS25R12YT3BOMA1

FS25R12YT3BOMA1

IGBT MOD 1200V 40A 165W

Infineon Technologies
2,027 -

RFQ

Tray - Not For New Designs - Three Phase Inverter 1200 V 40 A 165 W 2.15V @ 15V, 25A 5 mA 1.8 nF @ 25 V Standard Yes -40°C ~ 125°C Chassis Mount
NXH50C120L2C2ES1G

NXH50C120L2C2ES1G

IGBT MOD 1200V 50A 26DIP

onsemi
3,225 -

RFQ

Tube - Active - Three Phase Inverter with Brake 1200 V 50 A 20 mW 2.4V @ 15V, 50A 250 µA 11.89 nF @ 20 V Three Phase Bridge Rectifier Yes -40°C ~ 150°C (TJ) Through Hole
BSM15GD120DN2E3224BOSA1

BSM15GD120DN2E3224BOSA1

IGBT MOD 1200V 25A 145W

Infineon Technologies
2,046 -

RFQ

Tray - Last Time Buy - Full Bridge 1200 V 25 A 145 W 3V @ 15V, 15A 500 µA 1 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
DF225R12W2H3FB11BPSA1

DF225R12W2H3FB11BPSA1

LOW POWER EASY AG-EASY2B-2

Infineon Technologies
2,552 -

RFQ

Tray * Active - - - - - - - - - - - -
FS25R12KT3BPSA1

FS25R12KT3BPSA1

LOW POWER ECONO AG-ECONO2B-311

Infineon Technologies
2,625 -

RFQ

FS25R12KT3BPSA1

Ficha técnica

Tray EconoPACK™ 2 Active Trench Field Stop Full Bridge Inverter 1200 V 40 A 145 W 2.15V @ 15V, 25A 5 mA 1.8 nF @ 25 V Standard Yes -40°C ~ 125°C (TJ) Chassis Mount
APTGT50TL60T3G

APTGT50TL60T3G

IGBT MODULE 600V 80A 176W SP3

Microchip Technology
3,467 -

RFQ

APTGT50TL60T3G

Ficha técnica

Bulk - Active Trench Field Stop Three Level Inverter 600 V 80 A 176 W 1.9V @ 15V, 50A 250 µA 3.15 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
APTGT75A120T1G

APTGT75A120T1G

IGBT MODULE 1200V 110A 357W SP1

Microchip Technology
3,462 -

RFQ

APTGT75A120T1G

Ficha técnica

Bulk - Active Trench Field Stop Half Bridge 1200 V 110 A 357 W 2.1V @ 15V, 75A 250 µA 5.34 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-GT100TP60N

VS-GT100TP60N

IGBT MOD 600V 160A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,910 -

RFQ

VS-GT100TP60N

Ficha técnica

Bulk - Active Trench Half Bridge 600 V 160 A 417 W 2.1V @ 15V, 100A 5 mA 7.71 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
APTCV60TLM99T3G

APTCV60TLM99T3G

IGBT MODULE 600V 50A 90W SP3

Microchip Technology
2,163 -

RFQ

APTCV60TLM99T3G

Ficha técnica

Bulk - Active Trench Field Stop Three Level Inverter - IGBT, FET 600 V 50 A 90 W 1.9V @ 15V, 30A 250 µA 1.6 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
MIXA41W1200ED

MIXA41W1200ED

NPT IGBT MODULE

IXYS
2,083 -

RFQ

Box - Active - - - - - - - - - - - -
FS50R06YE3BOMA1

FS50R06YE3BOMA1

IGBT MODULE 600V 60A 160W

Infineon Technologies
3,927 -

RFQ

Tray - Not For New Designs - Full Bridge Inverter 600 V 60 A 160 W 1.9V @ 15V, 50A 1 mA 3.1 nF @ 25 V Standard Yes -40°C ~ 125°C Chassis Mount
APTGT50A170T1G

APTGT50A170T1G

IGBT MODULE 1700V 75A 312W SP1

Microchip Technology
3,388 -

RFQ

APTGT50A170T1G

Ficha técnica

Bulk - Active Trench Field Stop Half Bridge 1700 V 75 A 312 W 2.4V @ 15V, 50A 250 µA 4.4 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
FS3L25R12W2H3PB11BPSA1

FS3L25R12W2H3PB11BPSA1

LOW POWER EASY

Infineon Technologies
3,156 -

RFQ

Tray * Active - - - - - - - - - - - -
APTGLQ50H65T3G

APTGLQ50H65T3G

IGBT MODULE 650V 70A 175W SP3F

Microchip Technology
3,616 -

RFQ

APTGLQ50H65T3G

Ficha técnica

Bulk - Active Trench Field Stop Full Bridge 650 V 70 A 175 W 2.3V @ 15V, 50A 50 µA 3.1 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Chassis Mount
APTGT100BB60T3G

APTGT100BB60T3G

IGBT MODULE 600V 150A 340W SP3

Microchip Technology
2,612 -

RFQ

APTGT100BB60T3G

Ficha técnica

Bulk - Active Trench Field Stop Half Bridge 600 V 150 A 340 W 1.9V @ 15V, 100A 250 µA 6.1 nF @ 25 V Standard Yes -40°C ~ 175°C (TJ) Through Hole
Total 3931 Record«Prev1... 4647484950515253...197Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário