Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
MGP4N60E

MGP4N60E

IGBT, 6A, 600V, N-CHANNEL

onsemi
2,263 -

RFQ

MGP4N60E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SGP6N60UFDTU

SGP6N60UFDTU

N-CHANNEL IGBT

Fairchild Semiconductor
869 -

RFQ

SGP6N60UFDTU

Ficha técnica

Tube - Obsolete - 600 V 6 A 25 A 2.6V @ 15V, 3A 30 W 57µJ (on), 25µJ (off) Standard 15 nC 15ns/60ns 300V, 3A, 80Ohm, 15V 52 ns -55°C ~ 150°C (TJ) Through Hole
IRG4RC20FTRPBF

IRG4RC20FTRPBF

FAST SPEED IGBT

International Rectifier
2,661 -

RFQ

IRG4RC20FTRPBF

Ficha técnica

Bulk - Active - 600 V 22 A 44 A 2.1V @ 15V, 12A 66 W 190µJ (on), 920µJ (off) Standard 27 nC 26ns/194ns 480V, 12A, 50Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
SGD02N60

SGD02N60

IGBT, 6A, 600V, N-CHANNEL

Infineon Technologies
2,515 -

RFQ

SGD02N60

Ficha técnica

Bulk - Active NPT 600 V 6 A 12 A 2.4V @ 15V, 2A 30 W - Standard 14 nC 20ns/259ns 400V, 2A, 118Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
FGB20N6S2

FGB20N6S2

N-CHANNEL IGBT

Fairchild Semiconductor
2,591 -

RFQ

FGB20N6S2

Ficha técnica

Tube - Obsolete - 600 V 28 A 40 A 2.7V @ 15V, 7A 125 W 25µJ (on), 58µJ (off) Standard 30 nC 7.7ns/87ns 390V, 7A, 25Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IGP10N60TATMA1

IGP10N60TATMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
500 -

RFQ

IGP10N60TATMA1

Ficha técnica

Bulk * Active NPT, Trench Field Stop 600 V 24 A 30 A 2.05V @ 15V, 10A 110 W - Standard 62 nC 12ns/215ns 400V, 10A, 23Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
HGTP6N40E1D

HGTP6N40E1D

7.5A, 400V, N-CHANNEL IGBT

Harris Corporation
3,413 -

RFQ

HGTP6N40E1D

Ficha técnica

Bulk - Active - 400 V 7.5 A 7.5 A 2.5V @ 10V, 3A 75 W - Standard 6.9 nC - - - -55°C ~ 150°C (TJ) Through Hole
HGTP6N40EID

HGTP6N40EID

7.5A, 400V, N-CHANNEL IGBT

Harris Corporation
800 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
FGB20N6S2D

FGB20N6S2D

N-CHANNEL IGBT

Fairchild Semiconductor
3,289 -

RFQ

FGB20N6S2D

Ficha técnica

Tube - Obsolete - 600 V 28 A 40 A 2.7V @ 15V, 7A 125 W 25µJ (on), 58µJ (off) Standard 30 nC 7.7ns/87ns 390V, 7A, 25Ohm, 15V 31 ns -55°C ~ 150°C (TJ) Surface Mount
NGB8206ANSL3G

NGB8206ANSL3G

IGBT

onsemi
2,207 -

RFQ

NGB8206ANSL3G

Ficha técnica

Bulk - Active - 390 V 20 A 50 A 1.9V @ 4.5V, 20A 150 W - Logic - -/5µs 300V, 9A, 1kOhm, 5V - -55°C ~ 175°C (TJ) Surface Mount
HGTD7N60B3

HGTD7N60B3

14A, 600V, N-CHANNEL IGBT

Harris Corporation
900 -

RFQ

HGTD7N60B3

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2.1V @ 15V, 7A 60 W 160µJ (on), 120µJ (off) Standard 30 nC 26ns/130ns 480V, 7A, 50Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
HGTD7N60B3S

HGTD7N60B3S

14A, 600V, UFS N-CHANNEL IGBT

Harris Corporation
703 -

RFQ

HGTD7N60B3S

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2.1V @ 15V, 7A 60 W 72µJ (on), 120µJ (off) Standard 37 nC 26ns/130ns 480V, 7A, 50Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IRG4RC20FPBF

IRG4RC20FPBF

FAST SPEED IGBT

International Rectifier
3,168 -

RFQ

IRG4RC20FPBF

Ficha técnica

Bulk - Active - 600 V 22 A 44 A 2.1V @ 15V, 12A 66 W 190µJ (on), 920µJ (off) Standard 27 nC 26ns/194ns 480V, 12A, 50Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
HGTP7N60C3

HGTP7N60C3

14A, 600V, UFS SERIES N-CHANNEL

Harris Corporation
450 -

RFQ

HGTP7N60C3

Ficha técnica

Bulk - Active - 600 V 14 A 56 A 2V @ 15V, 7A 60 W - Standard 30 nC - - - -40°C ~ 150°C (TJ) Through Hole
HGTD8P50G1S

HGTD8P50G1S

8A, 500V P-CHANNEL IGBT

Harris Corporation
3,221 -

RFQ

HGTD8P50G1S

Ficha técnica

Bulk - Active - 500 V 12 A 18 A 2.9V @ 15V, 3A 66 W - Standard 30 nC - - - -55°C ~ 150°C (TJ) Surface Mount
FGPF4633TU

FGPF4633TU

IGBT, 330V, N-CHANNEL, TO-220AB

Fairchild Semiconductor
2,599 -

RFQ

FGPF4633TU

Ficha técnica

Bulk - Active Trench 330 V - 300 A 1.8V @ 15V, 70A 30.5 W - Standard 60 nC 8ns/52ns 200V, 20A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
MGP15N60U

MGP15N60U

IGBT, 26A, 600V, N-CHANNEL

onsemi
3,334 -

RFQ

MGP15N60U

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGPF4533

FGPF4533

IGBT

Fairchild Semiconductor
2,871 -

RFQ

FGPF4533

Ficha técnica

Bulk - Active Trench 330 V - 200 A 1.8V @ 15V, 50A 28.4 W - Standard 44 nC - - - - Through Hole
IGTP10N40

IGTP10N40

N CHANNEL IGBT FOR SWITCHING APP

Harris Corporation
934 -

RFQ

IGTP10N40

Ficha técnica

Bulk - Active - 400 V 10 A - - - - Standard - - - - - Through Hole
IRGS8B60KPBF

IRGS8B60KPBF

IGBT, 11A, 600V, N-CHANNEL

International Rectifier
2,352 -

RFQ

IRGS8B60KPBF

Ficha técnica

Bulk - Active NPT 600 V 28 A 34 A 2.2V @ 15V, 8A 167 W 160µJ (on), 160µJ (off) Standard 29 nC 23ns/140ns 400V, 8A, 50Ohm, 15V - -55°C ~ 175°C (TJ) Surface Mount
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1800+
1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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