Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXYX120N120B3

IXYX120N120B3

IGBT

IXYS
2,018 -

RFQ

IXYX120N120B3

Ficha técnica

Tube XPT™, GenX3™ Active - 1200 V 320 A 800 A 2.2V @ 15V, 100A 1500 W 9.7mJ (on), 21.5mJ (off) Standard 400 nC 30ns/340ns 960V, 100A, 1Ohm, 15V 54 ns -55°C ~ 175°C (TJ) Through Hole
IXXX300N60C3

IXXX300N60C3

IGBT 600V 510A 2300W TO247

IXYS
2,702 -

RFQ

IXXX300N60C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 510 A 1075 A 2V @ 15V, 100A 2300 W 3.35mJ (on), 1.9mJ (off) Standard 438 nC 50ns/160ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXXK300N60C3

IXXK300N60C3

IGBT 600V 510A 2300W TO264

IXYS
3,456 -

RFQ

IXXK300N60C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 510 A 1075 A 2V @ 15V, 100A 2300 W 3.35mJ (on), 1.9mJ (off) Standard 438 nC 50ns/160ns 400V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXGK120N120B3

IXGK120N120B3

IGBT 1200V 200A 830W TO264

IXYS
3,171 -

RFQ

IXGK120N120B3

Ficha técnica

Tube GenX3™ Active PT 1200 V 200 A 370 A 3V @ 15V, 100A 830 W 5.5mJ (on), 5.8mJ (off) Standard 470 nC 36ns/275ns 600V, 100A, 2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYK300N65A3

IXYK300N65A3

DISC IGBT XPT-GENX3 TO-264(3)

IXYS
3,489 -

RFQ

Tube XPT™, GenX3™ Active PT 650 V 600 A 1460 A 1.6V @ 15V, 100A 2300 W 7.8mJ (on), 4.7mJ (off) Standard 565 nC 42ns/190ns 400V, 100A, 1Ohm, 15V 125 ns -55°C ~ 175°C (TJ) Through Hole
IXYX300N65A3

IXYX300N65A3

DISC IGBT XPT-GENX3 TO-247AD

IXYS
3,930 -

RFQ

Tube XPT™, GenX3™ Active PT 650 V 600 A 1460 A 1.6V @ 15V, 100A 2300 W 7.8mJ (on), 4.7mJ (off) Standard 565 nC 42ns/190ns 400V, 100A, 1Ohm, 15V 125 ns -55°C ~ 175°C (TJ) Through Hole
IXGX100N170

IXGX100N170

IGBT 1700V 170A 830W PLUS247

IXYS
3,184 -

RFQ

IXGX100N170

Ficha técnica

Tube - Active NPT 1700 V 170 A 600 A 3V @ 15V, 100A 830 W - Standard 425 nC - - - -55°C ~ 150°C (TJ) Through Hole
IXYN150N60B3

IXYN150N60B3

IGBT

IXYS
2,131 -

RFQ

IXYN150N60B3

Ficha técnica

Tube XPT™, GenX3™ Active - 600 V 250 A 750 A 2.2V @ 15V, 150A 830 W 4.2mJ (on), 2.6mJ (off) Standard 260 nC 27ns/167ns 400V, 75A, 2Ohm, 15V 88 ns -55°C ~ 175°C (TJ) Chassis Mount
MMIX1X200N60B3

MMIX1X200N60B3

IGBT 600V 223A 625W SMPD

IXYS
3,104 -

RFQ

MMIX1X200N60B3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 223 A 1000 A 1.7V @ 15V, 100A 625 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Surface Mount
IXBA16N170AHV-TRL

IXBA16N170AHV-TRL

DISC IGBT BIMOSFET-HIGH VOLT TO-

IXYS
3,125 -

RFQ

Tape & Reel (TR) BIMOSFET™ Active - 1700 V 16 A 40 A 6V @ 15V, 10A 150 W 1.2mJ (off) Standard 65 nC 15ns/160ns 1360V, 10A, 10Ohm, 15V 360 ns -55°C ~ 150°C (TJ) Surface Mount
IXYN120N65C3D1

IXYN120N65C3D1

IGBT MOD DISC XPT-GENX3 SOT227UI

IXYS
2,315 -

RFQ

Tube GenX3™, XPT™ Active PT 650 V 190 A 620 A 2.8V @ 15V, 100A 830 W 1.25mJ (on), 500µJ (off) Standard 265 nC 28ns/127ns 400V, 50A, 2Ohm, 15V 29 ns -55°C ~ 175°C (TJ) Chassis Mount
IXYN120N65B3D1

IXYN120N65B3D1

IGBT MODULE DISC IGBT SOT-227UI

IXYS
2,200 -

RFQ

Tube GenX3™, XPT™ Active PT 650 V 250 A 770 A 1.9V @ 15V, 100A 830 W 1.34mJ (on), 1.5mJ (off) Standard 250 nC 30ns/168ns 400V, 50A, 2Ohm, 15V 28 ns -55°C ~ 175°C (TJ) Chassis Mount
MMIX1Y82N120C3H1

MMIX1Y82N120C3H1

DISC IGBT SMPD PKG-STANDARD SMPD

IXYS
2,056 -

RFQ

Tube - Active PT 1200 V 78 A 320 A 3.4V @ 15V, 82A 320 W 4.95mJ (on), 2.78mJ (off) Standard 215 nC 29ns/192ns 600V, 80A, 2Ohm, 15V 78 ns -55°C ~ 150°C (TJ) Surface Mount
IXGA20N250HV-TRL

IXGA20N250HV-TRL

DISC IGBT NPT VERY HI VOLTAGE TO

IXYS
3,681 -

RFQ

Tape & Reel (TR) - Active - 2500 V 30 A 105 A 3.1V @ 15V, 20A 150 W - Standard 53 nC - - - -55°C ~ 150°C (TJ) Surface Mount
MMIX1X340N65B4

MMIX1X340N65B4

MOSFET N-CH

IXYS
2,234 -

RFQ

MMIX1X340N65B4

Ficha técnica

Tube XPT™, GenX4™ Active - 650 V 450 A 1200 A 1.7V @ 15V, 160A 1200 W 4.4mJ (on), 3.5mJ (off) Standard 553 nC 62ns/245ns 400V, 100A, 1Ohm, 15V 76 ns -55°C ~ 175°C (TJ) Surface Mount
IXYT12N250CV1HV

IXYT12N250CV1HV

DISC IGBT XPT-HI VOLTAGE TO-268A

IXYS
2,128 -

RFQ

Tube XPT™ Active - 2500 V 28 A 80 A 4.5V @ 15V, 12A 310 W 3.56mJ (on), 1.7mJ (off) Standard 56 nC 12ns/167ns 1250V, 12A, 10Ohm, 15V 16 ns -55°C ~ 175°C (TJ) Surface Mount
IXGH25N250

IXGH25N250

IGBT 2500V 60A 250W TO247

IXYS
3,936 -

RFQ

Tube - Active NPT 2500 V 60 A 200 A 5.2V @ 15V, 75A 250 W - Standard 75 nC - - - - Through Hole
IXGH30N120B3

IXGH30N120B3

DISC IGBT PT-MID FREQUENCY TO-24

IXYS
3,298 -

RFQ

Tube GenX3™ Active PT 1200 V 60 A 150 A 3.5V @ 15V, 30A 300 W 3.47mJ (on), 2.16mJ (off) Standard 87 nC 16ns/127ns 960V, 30A, 5Ohm, 15V 37 ns -55°C ~ 150°C (TJ) Through Hole
IXGA20N250HV

IXGA20N250HV

DISC IGBT NPT-VERY HI VOLTAGE TO

IXYS
2,681 -

RFQ

Tube - Active - 2500 V 30 A 105 A 3.1V @ 15V, 20A 150 W - Standard 53 nC - - - -55°C ~ 150°C (TJ) Surface Mount
IXBF20N300

IXBF20N300

IGBT 3000V 34A 150W ISOPLUSI4

IXYS
3,512 -

RFQ

IXBF20N300

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 34 A 150 A 3.2V @ 15V, 20A 150 W - Standard 105 nC - - 1.35 µs -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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