Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
P3M171K0K3

P3M171K0K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor
3,654 -

RFQ

P3M171K0K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) Through Hole
P3M06120K3

P3M06120K3

SICFET N-CH 650V 27A TO-247-3

PN Junction Semiconductor
3,935 -

RFQ

P3M06120K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
P3M06120K4

P3M06120K4

SICFET N-CH 650V 27A TO-247-4

PN Junction Semiconductor
2,662 -

RFQ

P3M06120K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 27A 15V 158mOhm @ 10A, 15V 2.2V @ 5mA - +20V, -8V - - 131W -55°C ~ 175°C (TJ) Through Hole
P3M06060T3

P3M06060T3

SICFET N-CH 650V 46A TO220-3

PN Junction Semiconductor
2,150 -

RFQ

P3M06060T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 46A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 170W -55°C ~ 175°C (TJ) Through Hole
P3M06060K3

P3M06060K3

SICFET N-CH 650V 48A TO247-3

PN Junction Semiconductor
2,150 -

RFQ

P3M06060K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.2V @ 20mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
P3M06060K4

P3M06060K4

SICFET N-CH 650V 48A TO247-4

PN Junction Semiconductor
3,790 -

RFQ

P3M06060K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 48A 15V 79mOhm @ 20A, 15V 2.4V @ 5mA (Typ) - +20V, -8V - - 188W -55°C ~ 175°C (TJ) Through Hole
P3M06040K3

P3M06040K3

SICFET N-CH 650V 68A TO247-3

PN Junction Semiconductor
138 -

RFQ

P3M06040K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 68A 15V 50mOhm @ 40A, 15V 2.4V @ 7.5mA (Typ) - +20V, -8V - - 254W -55°C ~ 175°C (TJ) Through Hole
P3M171K0G7

P3M171K0G7

SICFET N-CH 1700V 7A TO-263-7

PN Junction Semiconductor
100 -

RFQ

P3M171K0G7

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 7A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 100W -55°C ~ 175°C (TJ) Surface Mount
P3M12040K3

P3M12040K3

SICFET N-CH 1200V 63A TO-247-3

PN Junction Semiconductor
2,962 -

RFQ

P3M12040K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 63A 15V 48mOhm @ 40A, 15V 2.2V @ 40mA (Typ) - +21V, -8V - - 349W -55°C ~ 175°C (TJ) Through Hole
P3M12025K4

P3M12025K4

SICFET N-CH 1200V 112A TO-247-4

PN Junction Semiconductor
2,623 -

RFQ

P3M12025K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 112A 15V 35mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 577W -55°C ~ 175°C (TJ) Through Hole
P3M07013K4

P3M07013K4

SICFET N-CH 750V 140A TO-247-4

PN Junction Semiconductor
2,423 -

RFQ

P3M07013K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 750 V 140A 15V 16mOhm @ 75A, 15V 2.2V @ 75mA (Typ) - +19V, -8V - - 428W -55°C ~ 175°C (TJ) Through Hole
P3M17040K4

P3M17040K4

SICFET N-CH 1700V 73A TO-247-4

PN Junction Semiconductor
3,811 -

RFQ

P3M17040K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 73A 15V 60mOhm @ 50A, 15V 2.2V @ 50mA (Typ) - +19V, -8V - - 536W -55°C ~ 175°C (TJ) Through Hole
P3M06300T3

P3M06300T3

SICFET N-CH 650V 9A TO-220-3

PN Junction Semiconductor
2,000 -

RFQ

P3M06300T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 35W -55°C ~ 175°C (TJ) Through Hole
P3M06300D5

P3M06300D5

SICFET N-CH 650V 9A DFN5*6

PN Junction Semiconductor
1,000 -

RFQ

P3M06300D5

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 26W -55°C ~ 175°C (TJ) Surface Mount
P3M06300D8

P3M06300D8

SICFET N-CH 650V 9A DFN8*8

PN Junction Semiconductor
200 -

RFQ

P3M06300D8

Ficha técnica

Tape & Reel (TR) P3M Active N-Channel SiCFET (Silicon Carbide) 650 V 9A 15V 500mOhm @ 4.5A, 15V 2.2V @ 5mA - +20V, -8V - - 32W -55°C ~ 175°C (TJ) Surface Mount
P3M173K0K3

P3M173K0K3

SICFET N-CH 1700V 4A TO-247-3

PN Junction Semiconductor
1,000 -

RFQ

P3M173K0K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 3.6Ohm @ 0.6A, 15V 2.2V @ 0.6mA (Typ) - +19V, -8V - - 63W -55°C ~ 175°C (TJ) Through Hole
P3M173K0T3

P3M173K0T3

SICFET N-CH 1700V 4A TO-220-3

PN Junction Semiconductor
275 -

RFQ

P3M173K0T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 4A 15V 2.6Ohm @ 0.6A, 15V 2.2V @ 0.6mA (Typ) - +19V, -8V - - 75W -55°C ~ 175°C (TJ) Through Hole
P3M171K2K3

P3M171K2K3

SICFET N-CH 1700V 6A TO-247-3

PN Junction Semiconductor
300 -

RFQ

P3M171K2K3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 68W -55°C ~ 175°C (TJ) Through Hole
P3M171K0T3

P3M171K0T3

SICFET N-CH 1700V 6A TO-220-3

PN Junction Semiconductor
300 -

RFQ

P3M171K0T3

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1700 V 6A 15V 1.4Ohm @ 2A, 15V 2.2V @ 2mA (Typ) - +19V, -8V - - 100W -55°C ~ 175°C (TJ) Through Hole
P3M12160K4

P3M12160K4

SICFET N-CH 1200V 19A TO-247-4

PN Junction Semiconductor
200 -

RFQ

P3M12160K4

Ficha técnica

Tube P3M Active N-Channel SiCFET (Silicon Carbide) 1200 V 19A 15V 192mOhm @ 10A, 15V 2.4V @ 2.5mA (Typ) - +21V, -8V - - 110W -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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