| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
                     
                    
                     
                     
                    
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                    IRFI614BTUFP001N-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                3,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.8A (Tc) | 10V | 2Ohm @ 1.4A, 10V | 4V @ 250µA | 10.5 nC @ 10 V | ±30V | 275 pF @ 25 V | - | 3.13W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SSS1N60BN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                3,684 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tj) | 10V | 12Ohm @ 500mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SI3447DVP-CHANNEL MOSFET Fairchild Semiconductor |  
                9,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | PowerTrench® | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 5.5A (Ta) | 1.8V, 4.5V | 33mOhm @ 5.5A, 4.5V | 1.5V @ 250µA | 30 nC @ 4.5 V | ±8V | 1926 pF @ 10 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    SSP1N60BN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                3,644 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1A (Tc) | 10V | 12Ohm @ 500mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRLI610ATUMOSFET N-CH 200V 3.3A I2PAK Fairchild Semiconductor |  
                3,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 5V | 1.5Ohm @ 1.65A, 5V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 240 pF @ 25 V | - | 3.1W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    NDTL01N60ZT1GMOSFET N-CH 600V 250MA SOT223 Fairchild Semiconductor |  
                6,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 250mA (Tc) | - | 15Ohm @ 400mA, 10V | 4.5V @ 50µA | 4.9 nC @ 10 V | ±30V | 92 pF @ 25 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    SFI9Z14TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                3,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6.7A (Tc) | 10V | 500mOhm @ 3.4A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 3.8W (Ta), 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFS720BN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                2,317 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 3.3A (Tj) | 10V | 1.75Ohm @ 1.65A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    FQU1N50TUMOSFET N-CH 500V 1.1A IPAK Fairchild Semiconductor |  
                2,056 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 1.1A (Tc) | 10V | 9Ohm @ 550mA, 10V | 5V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFR220BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                1,760 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Tc) | 10V | 800mOhm @ 2.3A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±30V | 390 pF @ 25 V | - | 2.5W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    IRFS820BN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                4,853 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.5A (Tj) | 10V | 2.6Ohm @ 1.25A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±30V | 610 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SSS2N60BN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                3,094 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2A (Tj) | 10V | 5Ohm @ 1A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SSR1N60BTM-WSMOSFET N-CH 600V 900MA DPAK Fairchild Semiconductor |  
                2,350 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 900mA (Tc) | 10V | 12Ohm @ 450mA, 10V | 4V @ 250µA | 7.7 nC @ 10 V | ±30V | 215 pF @ 25 V | - | 2.5W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    RFD3055MOSFET N-CH 60V 12A IPAK Fairchild Semiconductor |  
                2,302 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 12A (Tc) | 10V | 150mOhm @ 12A, 10V | 4V @ 250µA | 23 nC @ 20 V | ±20V | 300 pF @ 25 V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    HUFA76609D3ST_NLN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                2,281 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | UltraFET® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 4.5V, 10V | 160mOhm @ 10A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±16V | 425 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    SFI9Z24TUP-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                2,000 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 9.7A (Tc) | 10V | 280mOhm @ 4.9A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±30V | 600 pF @ 25 V | - | 3.8W (Ta), 49W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRL610AMOSFET N-CH 200V 3.3A TO220-3 Fairchild Semiconductor |  
                1,744 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 5V | 1.5Ohm @ 1.65A, 5V | 2V @ 250µA | 9 nC @ 5 V | ±20V | 240 pF @ 25 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    SFR9014TFMOSFET P-CH 60V 5.3A DPAK Fairchild Semiconductor |  
                5,740 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.3A (Tc) | 10V | 500mOhm @ 2.7A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 2.5W (Ta), 24W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 
                     
                    
                     
                     
                    
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                    FQNL1N50BBUMOSFET N-CH 500V 270MA TO92-3 Fairchild Semiconductor |  
                2,115 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 270mA (Tc) | 10V | 9Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 
                     
                    
                     
                     
                    
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                    IRFW630BTMN-CHANNEL POWER MOSFET Fairchild Semiconductor |  
                1,600 | - | 
                    
                    RFQ | 
                   
                
                  
                    
                 
                     Ficha técnica  | 
				 
                Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 720 pF @ 25 V | - | 3.13W (Ta), 72W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |