Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF47P06YDTU

FQPF47P06YDTU

MOSFET P-CH 60V 30A TO220F-3

Fairchild Semiconductor
3,851 -

RFQ

FQPF47P06YDTU

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 26mOhm @ 15A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP190N60-GF102

FCP190N60-GF102

MOSFET N-CH 600V 20.2A TO220-3

Fairchild Semiconductor
2,628 -

RFQ

FCP190N60-GF102

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 199mOhm @ 10A, 10V 3.5V @ 250µA 74 nC @ 10 V ±20V 2950 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP86363_F085

FDP86363_F085

110A, 80V, 0.0028OHM, N-CHANNEL

Fairchild Semiconductor
3,235 -

RFQ

FDP86363_F085

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 10000 pF @ 40 V - 300W (Tj) -55°C ~ 175°C (TJ) Through Hole
FDP86363-F085

FDP86363-F085

MOSFET N-CH 80V 110A TO220-3

Fairchild Semiconductor
2,637 -

RFQ

FDP86363-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 110A (Tc) 10V 2.8mOhm @ 80A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 10 pF @ 40 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCP130N60

FCP130N60

MOSFET N-CH 600V 28A TO220-3

Fairchild Semiconductor
2,913 -

RFQ

FCP130N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP400N80Z

FCP400N80Z

MOSFET N-CH 800V 14A TO220-3

Fairchild Semiconductor
2,653 -

RFQ

FCP400N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 14A (Tc) 10V 400mOhm @ 5.5A, 10V 4.5V @ 1.1mA 56 nC @ 10 V ±20V 2350 pF @ 1 V - 195W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP045N10AF102

FDP045N10AF102

120A, 100V, N-CHANNEL POWER MOSF

Fairchild Semiconductor
3,614 -

RFQ

FDP045N10AF102

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 100A, 10V 4V @ 250µA 74 nC @ 10 V ±20V 5270 pF @ 50 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH110N65F-F155

FCH110N65F-F155

MOSFET N-CH 650V 35A TO247

Fairchild Semiconductor
3,463 -

RFQ

FCH110N65F-F155

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 35A (Tc) 10V 110mOhm @ 17.5A, 10V 5V @ 3.5mA 145 nC @ 10 V ±20V 4895 pF @ 100 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB0300N1007L

FDB0300N1007L

MOSFET N-CH 100V 200A TO263-7

Fairchild Semiconductor
3,280 -

RFQ

FDB0300N1007L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 6V, 10V 3mOhm @ 26A, 10V 4V @ 250µA 113 nC @ 10 V ±20V 8295 pF @ 50 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMT800152DC

FDMT800152DC

MOSFET N-CH 150V 13A/72A 8DLCOOL

Fairchild Semiconductor
3,167 -

RFQ

FDMT800152DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 13A (Ta), 72A (Tc) 6V, 10V 9mOhm @ 13A, 10V 4V @ 250µA 83 nC @ 10 V ±20V 5875 pF @ 75 V - 3.2W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCH077N65F-F155

FCH077N65F-F155

MOSFET N-CH 650V 54A TO247

Fairchild Semiconductor
2,376 -

RFQ

FCH077N65F-F155

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 5.4mA 164 nC @ 10 V ±20V 7109 pF @ 100 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA8440

FDA8440

MOSFET N-CH 40V 30A/100A TO3PN

Fairchild Semiconductor
2,775 -

RFQ

FDA8440

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Ta), 100A (Tc) 4.5V, 10V 2.1mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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