Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDB045AN08A0

FDB045AN08A0

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,660 -

RFQ

FDB045AN08A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 19A (Ta), 90A (Tc) 6V, 10V 4.5mOhm @ 80A, 10V 4V @ 250µA 138 nC @ 10 V ±20V 6600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDPF17N60NT

FDPF17N60NT

MOSFET N-CH 600V 17A TO220F

Fairchild Semiconductor
3,357 -

RFQ

FDPF17N60NT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 340mOhm @ 8.5A, 10V 5V @ 250µA 65 nC @ 10 V ±30V 3040 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMA530PZ

FDMA530PZ

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
3,295 -

RFQ

FDMA530PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 6.8A (Ta) 4.5V, 10V 35mOhm @ 6.8A, 10V 3V @ 250µA 24 nC @ 10 V ±25V 1070 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8588

FDMC8588

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,656 -

RFQ

FDMC8588

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 16.5A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 17A, 10V 1.8V @ 250µA 12 nC @ 4.5 V ±12V 1228 pF @ 13 V - 2.4W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDME910PZT

FDME910PZT

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,394 -

RFQ

FDME910PZT

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 1.8V, 4.5V 24mOhm @ 8A, 4.5V 1.5V @ 250µA 21 nC @ 4.5 V ±8V 2110 pF @ 10 V - 2.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD6N50TM

FDD6N50TM

MOSFET N-CH 500V 6A DPAK

Fairchild Semiconductor
2,831 -

RFQ

FDD6N50TM

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 900mOhm @ 3A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 9400 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP3P50

FQP3P50

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,766 -

RFQ

FQP3P50

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 500 V 2.7A (Tc) 10V 4.9Ohm @ 1.35A, 10V 5V @ 250µA 23 nC @ 10 V ±30V 660 pF @ 25 V - 85W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF18N20FT

FDPF18N20FT

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,654 -

RFQ

FDPF18N20FT

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 140mOhm @ 9A, 10V 5V @ 250µA 26 nC @ 10 V ±30V 1180 pF @ 25 V - 41W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP3632

FDP3632

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,268 -

RFQ

FDP3632

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 80A (Tc) 6V, 10V 9mOhm @ 80A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 6000 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB8N90CTM

FQB8N90CTM

MOSFET N-CH 900V 6.3A D2PAK

Fairchild Semiconductor
3,200 -

RFQ

FQB8N90CTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 171W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8896

FDS8896

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,800 -

RFQ

FDS8896

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) 4.5V, 10V 6mOhm @ 15A, 10V 2.5V @ 250µA 67 nC @ 10 V ±20V 2525 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA8884

FDMA8884

MOSFET N-CH 30V 6.5/8A 6MICROFET

Fairchild Semiconductor
2,723 -

RFQ

FDMA8884

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 8A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 7.5 nC @ 10 V ±20V 450 pF @ 15 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQA9P25

FQA9P25

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,378 -

RFQ

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 250 V 10.5A (Tc) 10V 620mOhm @ 5.25A, 10V 5V @ 250µA 38 nC @ 10 V ±30V 1180 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC8015L

FDMC8015L

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,482 -

RFQ

FDMC8015L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7A (Ta), 18A (Tc) 4.5V, 10V 26mOhm @ 7A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 945 pF @ 20 V - 2.3W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC86320

FDMC86320

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,238 -

RFQ

FDMC86320

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.7A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.7A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC8327L

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,745 -

RFQ

FDMC8327L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 12A (Ta), 14A (Tc) 4.5V, 10V 9.7mOhm @ 12A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1850 pF @ 20 V - 2.3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB8P10TM

FQB8P10TM

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,013 -

RFQ

FQB8P10TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 530mOhm @ 4A, 10V 4V @ 250µA 15 nC @ 10 V ±30V 470 pF @ 25 V - 3.75W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDS9435A

FDS9435A

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,112 -

RFQ

FDS9435A

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 50mOhm @ 5.3A, 10V 3V @ 250µA 14 nC @ 10 V ±25V 528 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMS7558S

FDMS7558S

MOSFET N-CH 25V 32A/49A 8PQFN

Fairchild Semiconductor
3,069 -

RFQ

FDMS7558S

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 49A (Tc) 4.5V, 10V 1.25mOhm @ 32A, 10V 3V @ 1mA 119 nC @ 10 V ±20V 7770 pF @ 13 V - 2.5W (Ta), 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP11P06

FQP11P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,009 -

RFQ

FQP11P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 1812 Record«Prev1... 8485868788899091Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário