Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP20N06

FQP20N06

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,759 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 10V 60mOhm @ 10A, 10V 4V @ 250µA 15 nC @ 10 V ±25V 590 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSS123L

BSS123L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,860 -

RFQ

BSS123L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2V @ 1mA 2.5 nC @ 10 V ±20V 21.5 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB52N20TM

FDB52N20TM

POWER FIELD-EFFECT TRANSISTOR, 5

Fairchild Semiconductor
3,757 -

RFQ

FDB52N20TM

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 52A (Tc) 10V 49mOhm @ 26A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 2900 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS86267P

FDS86267P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,641 -

RFQ

FDS86267P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 150 V 2.2A (Ta) 6V, 10V 255mOhm @ 2.2A, 10V 4V @ 250µA 16 nC @ 10 V ±25V 1130 pF @ 75 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS9431A

FDS9431A

P-CHANNEL 2.5V SPECIFIED MOSFET

Fairchild Semiconductor
3,344 -

RFQ

FDS9431A

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 130mOhm @ 3.5A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±8V 405 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDT3612

FDT3612

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,942 -

RFQ

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 3.7A (Ta) 6V, 10V 120mOhm @ 3.7A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 632 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP20N06L

FQP20N06L

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,327 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 21A (Tc) 5V, 10V 55mOhm @ 10.5A, 10V 2.5V @ 250µA 13 nC @ 5 V ±20V 630 pF @ 25 V - 53W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS86320

FDMS86320

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,992 -

RFQ

FDMS86320

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 10.5A (Ta), 22A (Tc) 8V, 10V 11.7mOhm @ 10.5A, 10V 4.5V @ 250µA 41 nC @ 10 V ±20V 2640 pF @ 40 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN308P

FDN308P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,255 -

RFQ

FDN308P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 125mOhm @ 1.5A, 4.5V 1.5V @ 250µA 5.4 nC @ 4.5 V ±12V 341 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8588DC

FDMC8588DC

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,736 -

RFQ

FDMC8588DC

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 40A (Tc) 4.5V, 10V 5mOhm @ 18A, 10V 1.8V @ 250µA 12 nC @ 4.5 V ±12V 1695 pF @ 13 V - 3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP190N65F

FCP190N65F

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,328 -

RFQ

FCP190N65F

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDBL9403-F085

FDBL9403-F085

MOSFET N-CH 40V 240A 8HPSOF

Fairchild Semiconductor
2,736 -

RFQ

FDBL9403-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.9mOhm @ 80A, 10V 4V @ 250µA 188 nC @ 10 V ±20V 12000 pF @ 25 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FQPF5P20

FQPF5P20

MOSFET P-CH 200V 3.4A TO220F

Fairchild Semiconductor
3,141 -

RFQ

FQPF5P20

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 200 V 3.4A (Tc) 10V 1.4Ohm @ 1.7A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 430 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDN327N

FDN327N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,061 -

RFQ

FDN327N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 6.3 nC @ 4.5 V ±8V 423 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB070AN06A0

FDB070AN06A0

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,881 -

RFQ

FDB070AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Ta), 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 3000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP8N50NZ

FDP8N50NZ

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,187 -

RFQ

FDP8N50NZ

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4A, 10V 5V @ 250µA 18 nC @ 10 V ±25V 735 pF @ 25 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCP850N80Z

FCP850N80Z

MOSFET N-CH 800V 8A TO220-3

Fairchild Semiconductor
3,631 -

RFQ

FCP850N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 850mOhm @ 3A, 10V 4.5V @ 600µA 29 nC @ 10 V ±20V 1315 pF @ 100 V - 136W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDA38N30

FDA38N30

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,436 -

RFQ

FDA38N30

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 85mOhm @ 19A, 10V 5V @ 250µA 60 nC @ 10 V ±30V 2600 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQU1N80TU

FQU1N80TU

MOSFET N-CH 800V 1A I-PAK

Fairchild Semiconductor
2,858 -

RFQ

FQU1N80TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 1A (Tc) 10V 20Ohm @ 500mA, 10V 5V @ 250µA 7.2 nC @ 10 V ±30V 195 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQT3P20TF_SB82100

FQT3P20TF_SB82100

1-ELEMENT, P-CHANNEL POWER MOSFE

Fairchild Semiconductor
2,089 -

RFQ

FQT3P20TF_SB82100

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 200 V 670mA (Tc) 10V 2.7Ohm @ 335mA, 10V 5V @ 250µA 8 nC @ 10 V ±30V 250 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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