Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BS170

BS170

MOSFET N-CH 60V 300MA TO92-3

Fairchild Semiconductor
2,378 -

RFQ

BS170

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) - 5Ohm @ 200mA, 10V 3V @ 1mA - - 60 pF @ 10 V - - - Through Hole
FDC638P

FDC638P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,201 -

RFQ

FDC638P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 4.5A (Ta) 2.5V, 4.5V 48mOhm @ 4.5A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 1160 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQI7N80TU

FQI7N80TU

MOSFET N-CH 800V 6.6A I2PAK

Fairchild Semiconductor
2,569 -

RFQ

FQI7N80TU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS3662

FDMS3662

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,349 -

RFQ

FDMS3662

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 8.9A (Ta), 39A (Tc) 10V 14.8mOhm @ 8.9A, 10V 4.5V @ 250µA 75 nC @ 10 V ±20V 4620 pF @ 50 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB13AN06A0

FDB13AN06A0

POWER FIELD-EFFECT TRANSISTOR, 6

Fairchild Semiconductor
2,111 -

RFQ

FDB13AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD5N50NZFTM

FDD5N50NZFTM

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,214 -

RFQ

FDD5N50NZFTM

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 3.7A (Tc) 10V 1.75Ohm @ 1.85A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76407D3ST

HUF76407D3ST

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
3,540 -

RFQ

HUF76407D3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

Fairchild Semiconductor
2,814 -

RFQ

FDH210N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V - 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639S3STNL

HUF75639S3STNL

56A, 100V, 0.025OHM, N-CHANNEL P

Fairchild Semiconductor
3,463 -

RFQ

HUF75639S3STNL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP50N06_F102

RFP50N06_F102

1-ELEMENT, N-CHANNEL POWER MOSFE

Fairchild Semiconductor
2,649 -

RFQ

RFP50N06_F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 10V 22mOhm @ 50A, 10V 4V @ 250µA 150 nC @ 20 V ±20V 2020 pF @ 25 V - 131W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD4N60NZ

FDD4N60NZ

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,437 -

RFQ

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 3.4A (Tc) 10V 2.5Ohm @ 1.7A, 10V 5V @ 250µA 10.8 nC @ 10 V ±25V 510 pF @ 25 V - 114W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP3651U

FDP3651U

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,638 -

RFQ

FDP3651U

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 10V 18mOhm @ 80A, 10V 5.5V @ 250µA 69 nC @ 10 V ±20V 5522 pF @ 25 V - 255W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N312AD3STNL

ISL9N312AD3STNL

MOSFET N-CH 30V 50A TO252AA

Fairchild Semiconductor
2,574 -

RFQ

ISL9N312AD3STNL

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMA291P

FDMA291P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,124 -

RFQ

FDMA291P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6.6A (Ta) 1.8V, 4.5V 42mOhm @ 6.6A, 4.5V 1V @ 250µA 14 nC @ 4.5 V ±8V 1000 pF @ 10 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5670

FDS5670

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,425 -

RFQ

FDS5670

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 10A (Ta) 6V, 10V 14mOhm @ 10A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 2900 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS6673BZ

FDMS6673BZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,931 -

RFQ

FDMS6673BZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 15.2A (Ta), 28A (Tc) 4.5V, 10V 6.8mOhm @ 15.2A, 10V 3V @ 250µA 130 nC @ 10 V ±25V 5915 pF @ 15 V - 2.5W (Ta), 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC6683

FDMC6683

14A, 20V, 0.0084OHM, P-CHANNEL P

Fairchild Semiconductor
2,208 -

RFQ

FDMC6683

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 12A (Ta), 18A (Tc) 1.8V, 5V 8.3mOhm @ 12A, 4.5V 1V @ 250µA 114 nC @ 4.5 V ±8V 7835 pF @ 10 V - 2.3W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQB19N20LTM

FQB19N20LTM

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
2,641 -

RFQ

FQB19N20LTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 5V, 10V 140mOhm @ 10.5A, 10V 2V @ 250µA 35 nC @ 5 V ±20V 2200 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2610

FDMC2610

N-CHANNEL ULTRAFET TRENCH MOSFET

Fairchild Semiconductor
2,580 -

RFQ

FDMC2610

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 2.2A (Ta), 9.5A (Tc) 6V, 10V 200mOhm @ 2.2A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 960 pF @ 100 V - 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC2523P

FDMC2523P

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,137 -

RFQ

FDMC2523P

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 150 V 3A (Tc) 10V 1.5Ohm @ 1.5A, 10V 5V @ 250µA 9 nC @ 10 V ±30V 270 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 1812 Record«Prev1... 8283848586878889...91Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário