Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDD6530A

FDD6530A

MOSFET N-CH 20V 21A TO252

Fairchild Semiconductor
2,823 -

RFQ

FDD6530A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 21A (Ta) 2.5V, 4.5V 32mOhm @ 8A, 4.5V 1.2V @ 250µA 9 nC @ 4.5 V ±8V 710 pF @ 10 V - 3.3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76629D3STNL

HUF76629D3STNL

N-CHANNEL LOGIC LEVEL ULTRAFET P

Fairchild Semiconductor
3,892 -

RFQ

HUF76629D3STNL

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 1285 pF @ 25 V - 150W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDMC7582

FDMC7582

MOSFET N-CH 25V 16.7A/49A PWR33

Fairchild Semiconductor
2,530 -

RFQ

FDMC7582

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 16.7A (Ta), 49A (Tc) 4.5V, 10V 5mOhm @ 16.7A, 10V 2.5V @ 250µA 28 nC @ 10 V ±20V 1795 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMC8878

FDMC8878

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
2,125 -

RFQ

FDMC8878

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 16.5A (Tc) 4.5V, 10V 14mOhm @ 9.6A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1230 pF @ 15 V - 2.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQL40N50F

FQL40N50F

MOSFET N-CH 500V 40A TO264-3

Fairchild Semiconductor
2,808 -

RFQ

FQL40N50F

Ficha técnica

Bulk FRFET® Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 110mOhm @ 20A, 10V 5V @ 250µA 200 nC @ 10 V ±30V 7500 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
MTD3055V

MTD3055V

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,206 -

RFQ

MTD3055V

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 150mOhm @ 6A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 500 pF @ 25 V - 3.9W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL0120N40

FDBL0120N40

MOSFET N-CH 40V 240A 8HPSOF

Fairchild Semiconductor
2,767 -

RFQ

FDBL0120N40

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.2mOhm @ 80A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 7735 pF @ 25 V - 300W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FQD13N10LTM

FQD13N10LTM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,006 -

RFQ

FQD13N10LTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 5V, 10V 180mOhm @ 5A, 10V 2V @ 250µA 12 nC @ 5 V ±20V 520 pF @ 25 V - 2.5W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQD2N60CTM

FQD2N60CTM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,730 -

RFQ

FQD2N60CTM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 1.9A (Tc) 10V 4.7Ohm @ 950mA, 10V 4V @ 250µA 12 nC @ 10 V ±30V 235 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS2572

FDMS2572

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,956 -

RFQ

FDMS2572

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta), 27A (Tc) 6V, 10V 47mOhm @ 4.5A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 2610 pF @ 75 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC604P

FDC604P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,305 -

RFQ

FDC604P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 33mOhm @ 5.5A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 1926 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000-D26Z

2N7000-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,736 -

RFQ

2N7000-D26Z

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 200mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 1mA - ±20V 50 pF @ 25 V - 400mW (Ta) -55°C ~ 150°C (TJ) Through Hole
FDD050N03B

FDD050N03B

MOSFET N-CH 30V 50A DPAK

Fairchild Semiconductor
2,762 -

RFQ

FDD050N03B

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 25A, 10V 3V @ 250µA 43 nC @ 10 V ±16V 2875 pF @ 15 V - 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQB6N40CTM

FQB6N40CTM

MOSFET N-CH 400V 6A D2PAK

Fairchild Semiconductor
3,606 -

RFQ

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 400 V 6A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 625 pF @ 25 V - 73W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP12N50NZ

FDP12N50NZ

MOSFET N-CH 500V 11.5A TO220-3

Fairchild Semiconductor
3,457 -

RFQ

FDP12N50NZ

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 11.5A (Tc) 10V 520mOhm @ 5.75A, 10V 5V @ 250µA 30 nC @ 10 V ±25V 1235 pF @ 25 V - 170W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP3652

FDP3652

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
3,741 -

RFQ

FDP3652

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 9A (Ta), 61A (Tc) 6V, 10V 16mOhm @ 61A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 2880 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS7676

FDMS7676

MOSFET N-CH 30V 16A/28A 8PQFN

Fairchild Semiconductor
2,340 -

RFQ

FDMS7676

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 28A (Tc) 4.5V, 10V 5.5mOhm @ 19A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 2960 pF @ 15 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN306P

FDN306P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,783 -

RFQ

FDN306P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 12 V 2.6A (Ta) 1.8V, 4.5V 40mOhm @ 2.6A, 4.5V 1.5V @ 250µA 17 nC @ 4.5 V ±8V 1138 pF @ 6 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDC5661N

FDC5661N

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
2,034 -

RFQ

FDC5661N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 4.3A (Ta) 4.5V, 10V 47mOhm @ 4.3A, 10V 3V @ 250µA 19 nC @ 10 V ±20V 763 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS86569-F085

FDMS86569-F085

MOSFET N-CH 60V 65A POWER56

Fairchild Semiconductor
3,823 -

RFQ

FDMS86569-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 5.6mOhm @ 65A, 10V 4V @ 250µA 54 nC @ 10 V ±20V 2560 pF @ 30 V - 100W (Tj) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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