Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDU7N60NZTU

FDU7N60NZTU

MOSFET N-CH 600V 5.5A I-PAK

Fairchild Semiconductor
2,713 -

RFQ

FDU7N60NZTU

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 5.5A (Tc) 10V 1.25Ohm @ 2.75A, 10V 5V @ 250µA 17 nC @ 10 V ±25V 730 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB110N15A

FDB110N15A

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
2,530 -

RFQ

FDB110N15A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 92A (Tc) 10V 11mOhm @ 92A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 4510 pF @ 75 V - 234W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N7002W

2N7002W

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,753 -

RFQ

2N7002W

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Ta) 5V, 10V 7.5Ohm @ 50mA, 5V 2V @ 250µA - ±20V 50 pF @ 25 V - 200mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP8N90C

FQP8N90C

MOSFET N-CH 900V 6.3A TO220-3

Fairchild Semiconductor
2,288 -

RFQ

FQP8N90C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 900 V 6.3A (Tc) 10V 1.9Ohm @ 3.15A, 10V 5V @ 250µA 45 nC @ 10 V ±30V 2080 pF @ 25 V - 171W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF12N60NZ

FDPF12N60NZ

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,686 -

RFQ

FDPF12N60NZ

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) 10V 650mOhm @ 6A, 10V 5V @ 250µA 34 nC @ 10 V ±30V 1676 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH190N65F-F155

FCH190N65F-F155

MOSFET N-CH 650V 20.6A TO247

Fairchild Semiconductor
2,453 -

RFQ

FCH190N65F-F155

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF220N80

FCPF220N80

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
3,157 -

RFQ

FCPF220N80

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 23A (Tc) 10V 220mOhm @ 11.5A, 10V 4.5V @ 2.3mA 105 nC @ 10 V ±20V 4560 pF @ 100 V - 44W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS4672A

FDS4672A

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,428 -

RFQ

FDS4672A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 11A (Ta) 4.5V 13mOhm @ 11A, 4.5V 2V @ 250µA 49 nC @ 4.5 V ±12V 4766 pF @ 20 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDMS7680

FDMS7680

MOSFET N-CH 30V 14A/28A 8PQFN

Fairchild Semiconductor
2,050 -

RFQ

FDMS7680

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 28A (Tc) 4.5V, 10V 6.9mOhm @ 14A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1850 pF @ 15 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB8443

FDB8443

MOSFET N-CH 40V 25A/120A TO263AB

Fairchild Semiconductor
2,250 -

RFQ

FDB8443

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 25A (Ta), 120A (Tc) 10V 3mOhm @ 80A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 9310 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMC2674

FDMC2674

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,748 -

RFQ

FDMC2674

Ficha técnica

Bulk UniFET™ Active N-Channel MOSFET (Metal Oxide) 220 V 1A (Ta), 7A (Tc) 10V 366mOhm @ 1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 1180 pF @ 100 V - 2.1W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN358P

FDN358P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,462 -

RFQ

FDN358P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 125mOhm @ 1.5A, 10V 3V @ 250µA 5.6 nC @ 10 V ±20V 182 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDB0170N607L

FDB0170N607L

MOSFET N-CH 60V 300A TO263-7

Fairchild Semiconductor
2,440 -

RFQ

FDB0170N607L

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 300A (Tc) 10V 1.4mOhm @ 39A, 10V 4V @ 250µA 243 nC @ 10 V ±20V 19250 pF @ 30 V - 3.8W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP050AN06A0

FDP050AN06A0

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,755 -

RFQ

FDP050AN06A0

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 80A (Tc) 6V, 10V 5mOhm @ 80A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 3900 pF @ 25 V - 245W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS015N04B

FDMS015N04B

MOSFET N-CH 40V 31.3A/100A 8PQFN

Fairchild Semiconductor
3,328 -

RFQ

FDMS015N04B

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 31.3A (Ta), 100A (Tc) 10V 1.5mOhm @ 50A, 10V 4V @ 250µA 118 nC @ 10 V ±20V 8725 pF @ 20 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB2572

FDB2572

MOSFET N-CH 150V 4A/29A TO263AB

Fairchild Semiconductor
2,377 -

RFQ

FDB2572

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta), 29A (Tc) 6V, 10V 54mOhm @ 9A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1770 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDV305N

FDV305N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,630 -

RFQ

FDV305N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 900mA (Ta) 2.5V, 4.5V 220mOhm @ 900mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±12V 109 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF041N06BL1

FDPF041N06BL1

MOSFET N-CH 60V 77A TO220F

Fairchild Semiconductor
3,635 -

RFQ

FDPF041N06BL1

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 77A (Tc) 10V 4.1mOhm @ 77A, 10V 4V @ 250µA 69 nC @ 10 V ±20V 5690 pF @ 30 V - 44.1W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDY301NZ

FDY301NZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,063 -

RFQ

FDY301NZ

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.5V @ 250µA 1.1 nC @ 4.5 V ±12V 60 pF @ 10 V - 625mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD5612

FDD5612

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,731 -

RFQ

FDD5612

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 5.4A (Ta) 6V, 10V 55mOhm @ 5.4A, 10V 3V @ 250µA 11 nC @ 10 V ±20V 660 pF @ 30 V - 3.8W (Ta), 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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