Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76633P3-F085

HUF76633P3-F085

MOSFET N-CH 100V 39A TO220-3

Fairchild Semiconductor
2,821 -

RFQ

HUF76633P3-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 39A (Tc) 4.5V, 10V 35mOhm @ 39A, 10V 3V @ 250µA 67 nC @ 10 V ±16V 1820 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS86252L

FDMS86252L

FDMS86252 - N-CHANNEL SHIELDED G

Fairchild Semiconductor
3,514 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.4A (Ta), 12A (Tc) 4.5V, 10V 56mOhm @ 4.4A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 1335 pF @ 75 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB42AN15A0-F085

FDB42AN15A0-F085

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,385 -

RFQ

FDB42AN15A0-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 35A (Tc) 10V 42mOhm @ 12A, 10V 4V @ 250µA 36 nC @ 10 V ±20V 2040 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FCH150N65F-F155

FCH150N65F-F155

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,899 -

RFQ

FCH150N65F-F155

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 150mOhm @ 12A, 10V 5V @ 2.4mA 94 nC @ 10 V ±20V 3737 pF @ 100 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF380N60E

FCPF380N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,293 -

RFQ

FCPF380N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF650N80Z

FCPF650N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,472 -

RFQ

FCPF650N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 8A (Tc) 10V 650mOhm @ 4A, 10V 4.5V @ 800µA 35 nC @ 10 V ±20V 1565 pF @ 100 V - 30.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDN357N

FDN357N

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,465 -

RFQ

FDN357N

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta) 4.5V, 10V 60mOhm @ 2.2A, 10V 2V @ 250µA 5.9 nC @ 5 V ±20V 235 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
2N7000

2N7000

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,384 -

RFQ

2N7000

Ficha técnica

Bulk STripFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 350mA (Tc) 4.5V, 10V 5Ohm @ 500mA, 10V 3V @ 250µA 2 nC @ 5 V ±18V 43 pF @ 25 V - 350mW (Ta) 150°C (TJ) Through Hole
FDB024N06

FDB024N06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,015 -

RFQ

FDB024N06

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 2.4mOhm @ 75A, 10V 4.5V @ 250µA 226 nC @ 10 V ±20V 14885 pF @ 25 V - 395W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDP2D3N10C

FDP2D3N10C

N-CHANNEL SHIELDED GATE POWERTRE

Fairchild Semiconductor
3,992 -

RFQ

FDP2D3N10C

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 222A (Tc) 10V 2.3mOhm @ 100A, 10V 4V @ 700µA 152 nC @ 10 V ±20V 11180 pF @ 50 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDPF12N50UT

FDPF12N50UT

MOSFET N-CH 500V 10A TO220F

Fairchild Semiconductor
2,719 -

RFQ

FDPF12N50UT

Ficha técnica

Bulk FRFET® Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 800mOhm @ 5A, 10V 5V @ 250µA 30 nC @ 10 V ±30V 1395 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF290N80

FCPF290N80

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,356 -

RFQ

FCPF290N80

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 8.5A, 10V 4.5V @ 1.7mA 75 nC @ 10 V ±20V 3205 pF @ 100 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7692A

FDMS7692A

MOSFET N-CH 30V 13.5A/28A 8PQFN

Fairchild Semiconductor
2,331 -

RFQ

FDMS7692A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 28A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1350 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS8880

FDMS8880

MOSFET N-CH 30V 13.5A/21A 8PQFN

Fairchild Semiconductor
3,943 -

RFQ

FDMS8880

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta), 21A (Tc) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 2.5V @ 250µA 33 nC @ 10 V ±20V 1585 pF @ 15 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2N7002

2N7002

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,022 -

RFQ

2N7002

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 115mA (Tc) 5V, 10V 7.5Ohm @ 50mA, 5V - - ±20V 50 pF @ 25 V - 200mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB2532

FDB2532

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
3,468 -

RFQ

FDB2532

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Ta), 79A (Tc) 6V, 10V 16mOhm @ 33A, 10V 4V @ 250µA 107 nC @ 10 V ±20V 5870 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD6685

FDD6685

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,926 -

RFQ

FDD6685

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 40A (Tc) 4.5V, 10V 20mOhm @ 11A, 10V 3V @ 250µA 24 nC @ 5 V ±25V 1715 pF @ 15 V - 1.6W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDG328P

FDG328P

MOSFET P-CH 20V 1.5A SC88

Fairchild Semiconductor
2,385 -

RFQ

FDG328P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 145mOhm @ 1.5A, 4.5V 1.5V @ 250µA 6 nC @ 4.5 V ±12V 337 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA710PZ

FDMA710PZ

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,028 -

RFQ

FDMA710PZ

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 7.8A (Ta) 1.8V, 5V 24mOhm @ 7.8A, 5V 1.5V @ 250µA 42 nC @ 5 V ±8V 2015 pF @ 10 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS5690

FDS5690

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,755 -

RFQ

FDS5690

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 7A (Ta) 6V, 10V 28mOhm @ 7A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 1107 pF @ 30 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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