Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
TIP42CTU-T

TIP42CTU-T

TRANS BJTS PNP 100V 6A TO220-3 T

Fairchild Semiconductor
458,000 -

RFQ

TIP42CTU-T

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMA7628

FDMA7628

FDMA7628 - SINGLE N-CHANNEL 1.5

Fairchild Semiconductor
90,000 -

RFQ

FDMA7628

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9.4A (Ta) 1.5V, 4.5V 14.5mOhm @ 9.4A, 4.5V 1V @ 250µA 17.5 nC @ 4.5 V ±8V 1680 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC8884

FDMC8884

9A, 30V, 0.019OHM, N-CHANNEL POW

Fairchild Semiconductor
448,778 -

RFQ

FDMC8884

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 15A (Tc) 4.5V, 10V 19mOhm @ 9A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 685 pF @ 15 V - 2.3W (Ta), 18W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8796

FDD8796

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
34,346 -

RFQ

FDD8796

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 5.7mOhm @ 35A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2610 pF @ 13 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDD8780

FDD8780

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
1,003,805 -

RFQ

FDD8780

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 35A (Tc) 4.5V, 10V 8.5mOhm @ 35A, 10V 2.5V @ 250µA 29 nC @ 10 V ±20V 1440 pF @ 13 V - 50W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF3N25

FQPF3N25

MOSFET N-CH 250V 2.3A TO220F

Fairchild Semiconductor
204,848 -

RFQ

FQPF3N25

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 250 V 2.3A (Tc) 10V 2.2Ohm @ 1.15A, 10V 5V @ 250µA 5.2 nC @ 10 V ±30V 170 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6294

FDS6294

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
28,057 -

RFQ

FDS6294

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11.3mOhm @ 13A, 10V 3V @ 250µA 14 nC @ 5 V ±20V 1205 pF @ 15 V - 3W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDS8876

FDS8876

MOSFET N-CH 30V 12.5A 8SOIC

Fairchild Semiconductor
615,441 -

RFQ

FDS8876

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 12.5A (Ta) 4.5V, 10V 8.2mOhm @ 12.5A, 10V 2.5V @ 250µA 36 nC @ 10 V ±20V 1650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS5361L-F085

FDMS5361L-F085

FDMS5361 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
4,166 -

RFQ

FDMS5361L-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 15mOhm @ 16.5A, 10V 3V @ 250µA 44 nC @ 10 V ±20V 1980 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8025S

FDMS8025S

MOSFET N-CH 30V 24A/49A 8PQFN

Fairchild Semiconductor
303,536 -

RFQ

FDMS8025S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 24A (Ta), 49A (Tc) 4.5V, 10V 2.8mOhm @ 24A, 10V 3V @ 1mA 47 nC @ 10 V ±20V 3000 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD8451

FDD8451

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
5,302 -

RFQ

FDD8451

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 9A (Ta), 28A (Tc) 4.5V, 10V 24mOhm @ 9A, 10V 3V @ 250µA 20 nC @ 10 V ±20V 990 pF @ 20 V - 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD6680AS

FDD6680AS

MOSFET N-CH 30V 55A TO252

Fairchild Semiconductor
10,485 -

RFQ

FDD6680AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) 4.5V, 10V 10.5mOhm @ 12.5A, 10V 3V @ 1mA 29 nC @ 10 V ±20V 1200 pF @ 15 V - 60W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF530A

IRF530A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,966 -

RFQ

IRF530A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 110mOhm @ 7A, 10V 4V @ 250µA 36 nC @ 10 V - 790 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF2N70

FQPF2N70

MOSFET N-CH 700V 2A TO220F

Fairchild Semiconductor
42,241 -

RFQ

FQPF2N70

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 700 V 2A (Tc) 10V 6.3Ohm @ 1A, 10V 5V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC7680

FDMC7680

MOSFET N-CH 30V 14.8A 8MLP

Fairchild Semiconductor
11,422 -

RFQ

FDMC7680

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 14.8A (Ta) 4.5V, 10V 7.2mOhm @ 14.8A, 10V 3V @ 250µA 42 nC @ 10 V ±20V 2855 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDPF680N10T

FDPF680N10T

MOSFET N-CH 100V 12A TO220F

Fairchild Semiconductor
54,897 -

RFQ

FDPF680N10T

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 68mOhm @ 6A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V 1000 pF @ 50 V - 24W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB11P06TM

FQB11P06TM

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
1,678 -

RFQ

FQB11P06TM

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 11.4A (Tc) 10V 175mOhm @ 5.7A, 10V 4V @ 250µA 17 nC @ 10 V ±25V 550 pF @ 25 V - 3.13W (Ta), 53W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF33N10L

FQPF33N10L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
15,230 -

RFQ

FQPF33N10L

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 5V, 10V 52mOhm @ 9A, 10V 2V @ 250µA 40 nC @ 5 V ±20V 1630 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCU2250N80Z

FCU2250N80Z

MOSFET N-CH 800V 2.6A I-PAK

Fairchild Semiconductor
96,353 -

RFQ

FCU2250N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2.6A (Tc) 10V 2.25Ohm @ 1.3A, 10V 4.5V @ 260µA 14 nC @ 10 V ±20V 585 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDC697P

FDC697P

8A, 20V, 0.02OHM, P-CHANNEL MOSF

Fairchild Semiconductor
69,806 -

RFQ

FDC697P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 8A (Ta) 1.8V, 4.5V 20mOhm @ 8A, 4.5V 1.5V @ 250µA 55 nC @ 4.5 V ±8V 3524 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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