Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF76645P3

HUF76645P3

MOSFET N-CH 100V 75A TO220-3

Fairchild Semiconductor
1,069 -

RFQ

HUF76645P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 4.5V, 10V 14mOhm @ 75A, 10V 3V @ 250µA 153 nC @ 10 V ±16V 4400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75545S3S

HUF75545S3S

MOSFET N-CH 80V 75A D2PAK

Fairchild Semiconductor
454 -

RFQ

HUF75545S3S

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76145S3S

HUF76145S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
9,980 -

RFQ

HUF76145S3S

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 156 nC @ 10 V ±20V 4900 pF @ 25 V - 270W (Tc) -40°C ~ 150°C (TJ) Surface Mount
FDS2170N3

FDS2170N3

MOSFET N-CH 200V 3A 8SOIC

Fairchild Semiconductor
2,617 -

RFQ

FDS2170N3

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP7N80

FQP7N80

MOSFET N-CH 800V 6.6A TO220-3

Fairchild Semiconductor
16,338 -

RFQ

FQP7N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA10N60C

FQA10N60C

MOSFET N-CH 600V 10A TO3P

Fairchild Semiconductor
44,527 -

RFQ

FQA10N60C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 730mOhm @ 5A, 10V 4V @ 250µA 57 nC @ 10 V ±30V 2040 pF @ 25 V - 192W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2170N7

FDS2170N7

MOSFET N-CH 200V 3A 8SOIC

Fairchild Semiconductor
23,636 -

RFQ

FDS2170N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 3A (Ta) 10V 128mOhm @ 3A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V 1292 pF @ 100 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP460C

IRFP460C

MOSFET N-CH 500V 20A TO3P

Fairchild Semiconductor
16,135 -

RFQ

IRFP460C

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 240mOhm @ 10A, 10V 4V @ 250µA 170 nC @ 10 V ±30V 6000 pF @ 25 V - 235W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS2070N7

FDS2070N7

MOSFET N-CH 150V 4.1A 8SO

Fairchild Semiconductor
15,138 -

RFQ

FDS2070N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 4.1A (Ta) 6V, 10V 78mOhm @ 4.1A, 10V 4V @ 250µA 53 nC @ 10 V ±20V 1884 pF @ 75 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS2504SDC

FDMS2504SDC

MOSFET N-CH 25V 42A/49A DLCOOL56

Fairchild Semiconductor
7,247 -

RFQ

FDMS2504SDC

Ficha técnica

Bulk Dual Cool™, PowerTrench®, SyncFET™ Obsolete N-Channel MOSFET (Metal Oxide) 25 V 42A (Ta), 49A (Tc) 4.5V, 10V 1.25mOhm @ 32A, 10V 3V @ 1mA 119 nC @ 10 V ±20V 7770 pF @ 13 V - 3.3W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCA20N60

FCA20N60

20A, 600V, 0.19OHM, N-CHANNEL

Fairchild Semiconductor
4,567 -

RFQ

FCA20N60

Ficha técnica

Bulk SuperFET™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 250µA 98 nC @ 10 V ±30V 3080 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ)
FDP15N50

FDP15N50

MOSFET N-CH 500V 15A TO220-3

Fairchild Semiconductor
4,753 -

RFQ

FDP15N50

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 380mOhm @ 7.5A, 10V 4V @ 250µA 41 nC @ 10 V ±30V 1850 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
ISL9N302AS3ST

ISL9N302AS3ST

MOSFET N-CH 30V 75A D2PAK

Fairchild Semiconductor
50,762 -

RFQ

ISL9N302AS3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 2.3mOhm @ 75A, 10V 3V @ 250µA 300 nC @ 10 V ±20V 11000 pF @ 15 V - 345W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA13N50C

FQA13N50C

MOSFET N-CH 500V 13.5A TO3P

Fairchild Semiconductor
9,748 -

RFQ

FQA13N50C

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 13.5A (Tc) 10V 480mOhm @ 6.75A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75345P3

HUFA75345P3

MOSFET N-CH 55V 75A TO220-3

Fairchild Semiconductor
6,758 -

RFQ

HUFA75345P3

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDA15N65

FDA15N65

MOSFET N-CH 650V 16A TO3PN

Fairchild Semiconductor
2,274 -

RFQ

FDA15N65

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 16A (Tc) 10V 440mOhm @ 8A, 10V 5V @ 250µA 63 nC @ 10 V ±30V 3095 pF @ 25 V - 260W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP5500

FDP5500

N CHANNEL ULTRAFET 55V, 80A, 7M

Fairchild Semiconductor
2,045 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 7mOhm @ 80A, 10V 4V @ 250µA 269 nC @ 20 V ±20V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP7030L

FDP7030L

MOSFET N-CH 30V 80A TO220-3

Fairchild Semiconductor
29,300 -

RFQ

FDP7030L

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 80A (Ta) 4.5V, 10V 7mOhm @ 40A, 10V 3V @ 250µA 33 nC @ 5 V ±20V 2440 pF @ 15 V - 68W (Tc) -65°C ~ 175°C (TJ) Through Hole
FCP21N60N

FCP21N60N

N-CHANNEL, MOSFET

Fairchild Semiconductor
20,185 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V - - - - - - - - - - Through Hole
NDP7061

NDP7061

MOSFET N-CH 60V 64A TO220-3

Fairchild Semiconductor
5,896 -

RFQ

NDP7061

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 64A (Tc) 10V 16mOhm @ 35A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 1930 pF @ 25 V - 130W (Tc) -65°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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