Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDA2712

FDA2712

MOSFET N-CH 250V 64A TO3PN

Fairchild Semiconductor
2,332 -

RFQ

FDA2712

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 34mOhm @ 40A, 10V 5V @ 250µA 129 nC @ 10 V ±30V 10175 pF @ 25 V - 357W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA75329G3

HUFA75329G3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,700 -

RFQ

HUFA75329G3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
MMBF4091

MMBF4091

MMBF4091 - N-CHANNEL SWITCH

Fairchild Semiconductor
73,480 -

RFQ

MMBF4091

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDG312P

FDG312P

MOSFET P-CH 20V 1.2A SC88

Fairchild Semiconductor
195,282 -

RFQ

FDG312P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.5V, 4.5V 180mOhm @ 1.2A, 4.5V 1.5V @ 250µA 5 nC @ 4.5 V ±8V 330 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS356AP-NB8L005A

NDS356AP-NB8L005A

-30V P-CHANNEL LOGIC LEVEL ENHAN

Fairchild Semiconductor
105,360 -

RFQ

NDS356AP-NB8L005A

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 30 V 1.1A (Ta) 4.5V, 10V 200mOhm @ 1.3A, 10V 2.5V @ 250µA 4.4 nC @ 5 V ±20V 280 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS0349

FDMS0349

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
217,483 -

RFQ

FDMS0349

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 20A (Tc) 4.5V, 10V 8mOhm @ 14A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 1410 pF @ 15 V - 2.5W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMS0346

FDMS0346

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
108,000 -

RFQ

FDMS0346

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 17A (Ta), 28A (Tc) 4.5V, 10V 5.8mOhm @ 17A, 10V 3V @ 250µA 25 nC @ 10 V ±20V 1625 pF @ 13 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDG311N

FDG311N

MOSFET N-CH 20V 1.9A SC88

Fairchild Semiconductor
100,055 -

RFQ

FDG311N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 1.9A (Ta) 2.5V, 4.5V 115mOhm @ 1.9A, 4.5V 1.5V @ 250µA 4.5 nC @ 4.5 V ±8V 270 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQN1N60CTA

FQN1N60CTA

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
90,000 -

RFQ

FQN1N60CTA

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 300mA (Tc) 10V 11.5Ohm @ 150mA, 10V 4V @ 250µA 6.2 nC @ 10 V ±30V 170 pF @ 25 V - 1W (Ta), 3W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS0348

FDMS0348

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
63,000 -

RFQ

FDMS0348

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 35A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V 3V @ 250µA 26 nC @ 10 V ±20V 1590 pF @ 15 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS8878

FDS8878

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
622,342 -

RFQ

FDS8878

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta) 4.5V, 10V 14mOhm @ 10.2A, 10V 2.5V @ 250µA 26 nC @ 10 V ±20V 897 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDZ193P

FDZ193P

MOSFET P-CH 20V 3A 6WLCSP

Fairchild Semiconductor
780,536 -

RFQ

FDZ193P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.7V, 4.5V 90mOhm @ 1A, 4.5V 1.5V @ 250µA 10 nC @ 10 V ±12V 660 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
HUFA75307T3ST

HUFA75307T3ST

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
26,380 -

RFQ

HUFA75307T3ST

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 2.6A (Ta) 10V 90mOhm @ 2.6A, 10V 4V @ 250µA 17 nC @ 20 V ±20V 250 pF @ 25 V - 1.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDFMA2P853

FDFMA2P853

MOSFET P-CH 20V 3A 6MICROFET

Fairchild Semiconductor
21,841 -

RFQ

FDFMA2P853

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V 1.3V @ 250µA 6 nC @ 4.5 V ±8V 435 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC0202S

FDMC0202S

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
16,805 -

RFQ

FDMC0202S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 25 V 22.5A (Ta), 40A (Tc) 4.5V, 10V 3.15mOhm @ 22.5A, 10V 3V @ 1mA 44 nC @ 10 V ±20V 2705 pF @ 13 V - 2.3W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6630A

FDS6630A

MOSFET N-CH 30V 6.5A 8SOIC

Fairchild Semiconductor
59,894 -

RFQ

FDS6630A

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 38mOhm @ 6.5A, 10V 3V @ 250µA 7 nC @ 5 V ±20V 460 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6690A-NBNP006

FDS6690A-NBNP006

SINGLE N-CHANNEL, LOGIC LEVEL, P

Fairchild Semiconductor
6,321 -

RFQ

FDS6690A-NBNP006

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDFMA3P029Z

FDFMA3P029Z

MOSFET P-CH 30V 3.3A 6MICROFET

Fairchild Semiconductor
2,319 -

RFQ

FDFMA3P029Z

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta) - 87mOhm @ 3.3A, 10V 3V @ 250µA 10 nC @ 10 V - 435 pF @ 15 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS8433A-G

FDS8433A-G

FDS8433A - MOSFET 20V 47.0 MOHM

Fairchild Semiconductor
723,388 -

RFQ

FDS8433A-G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDZ663P

FDZ663P

FDZ663P - FDZ663P - MOSFET P-CHA

Fairchild Semiconductor
60,000 -

RFQ

FDZ663P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.5V, 4.5V 134mOhm @ 2A, 4.5V 1.2V @ 250µA 8.2 nC @ 4.5 V ±8V 525 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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