Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQPF33N10

FQPF33N10

MOSFET N-CH 100V 18A TO220F

Fairchild Semiconductor
1,195 -

RFQ

FQPF33N10

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 52mOhm @ 9A, 10V 4V @ 250µA 51 nC @ 10 V ±25V 1500 pF @ 25 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCPF600N60Z

FCPF600N60Z

MOSFET N-CH 600V 7.4A TO220F

Fairchild Semiconductor
203,678 -

RFQ

FCPF600N60Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 7.4A (Tc) 10V 600mOhm @ 3.7A, 10V 3.5V @ 250µA 26 nC @ 10 V ±20V 1120 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDS8425

NDS8425

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
60,351 -

RFQ

NDS8425

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 7.4A (Ta) 2.7V, 4.5V 22mOhm @ 7.4A, 4.5V 1.5V @ 250µA 18 nC @ 4.5 V ±8V 1098 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDPF5N50NZF

FDPF5N50NZF

MOSFET N-CH 500V 4.2A TO220F

Fairchild Semiconductor
552,134 -

RFQ

FDPF5N50NZF

Ficha técnica

Bulk UniFET-II™ Active N-Channel MOSFET (Metal Oxide) 500 V 4.2A (Tc) 10V 1.75Ohm @ 2.1A, 10V 5V @ 250µA 12 nC @ 10 V ±25V 485 pF @ 25 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI5N60CTU

FQI5N60CTU

MOSFET N-CH 600V 4.5A I2PAK

Fairchild Semiconductor
35,688 -

RFQ

FQI5N60CTU

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 2.5Ohm @ 2.25A, 10V 4V @ 250µA 19 nC @ 10 V ±30V 670 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS7572S

FDMS7572S

MOSFET N-CH 25V 23A/49A 8PQFN

Fairchild Semiconductor
81,825 -

RFQ

FDMS7572S

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 25 V 23A (Ta), 49A (Tc) 4.5V, 10V 2.9mOhm @ 23A, 10V 3V @ 1mA 45 nC @ 10 V ±20V 2780 pF @ 13 V - 2.5W (Ta), 46W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP380N60E

FCP380N60E

MOSFET N-CH 600V 10.2A TO220-3

Fairchild Semiconductor
26,156 -

RFQ

FCP380N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 10.2A (Tc) 10V 380mOhm @ 5A, 10V 3.5V @ 250µA 45 nC @ 10 V ±20V 1770 pF @ 25 V - 106W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF380N65FL1

FCPF380N65FL1

MOSFET N-CH 650V 10.2A TO220F

Fairchild Semiconductor
85,000 -

RFQ

FCPF380N65FL1

Ficha técnica

Bulk FRFET®, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 10.2A (Tc) 10V 380mOhm @ 5.1A, 10V 5V @ 1mA 43 nC @ 10 V ±20V 1680 pF @ 100 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD6688

FDD6688

MOSFET N-CH 30V 84A DPAK

Fairchild Semiconductor
151,902 -

RFQ

FDD6688

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 84A (Ta) 4.5V, 10V 5mOhm @ 18A, 10V 3V @ 250µA 56 nC @ 10 V ±20V 3845 pF @ 15 V - 83W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FQA32N20C

FQA32N20C

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
32,361 -

RFQ

FQA32N20C

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 82mOhm @ 16A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2220 pF @ 25 V - 204W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCPF165N65S3R0L

FCPF165N65S3R0L

FCPF165N65S3R0L - POWER MOSFET

Fairchild Semiconductor
11,630 -

RFQ

Bulk SuperFET® III Obsolete N-Channel MOSFET (Metal Oxide) 650 V 19A (Tc) 10V 165mOhm @ 9.5A, 10V 4.5V @ 410µA 35 nC @ 10 V ±30V 1415 pF @ 400 V - 35W (Tc) -55°C ~ 150°C (TJ)
FCPF190N60E-F152

FCPF190N60E-F152

FCPF190N60E - POWER MOSFET N-CHA

Fairchild Semiconductor
41,900 -

RFQ

Bulk * Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20.6A (Tj) 10V 190mOhm @ 10A, 10V 3.5V @ 250µA 82 nC @ 10 V ±20V 3175 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS3672

FDMS3672

FDMS3672 - N-CHANNEL ULTRAFET TR

Fairchild Semiconductor
56,778 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 22A (Tc) 6V, 10V 23mOhm @ 7.4A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 2680 pF @ 50 V - 2.5W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP9N60N

FCP9N60N

MOSFET N-CH 600V 9A TO220-3

Fairchild Semiconductor
35,008 -

RFQ

FCP9N60N

Ficha técnica

Bulk SuperMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) 10V 385mOhm @ 4.5A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 1240 pF @ 100 V - 83.3W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQA13N50CF

FQA13N50CF

MOSFET N-CH 500V 15A TO3PN

Fairchild Semiconductor
2,481 -

RFQ

FQA13N50CF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 480mOhm @ 7.5A, 10V 4V @ 250µA 56 nC @ 10 V ±30V 2055 pF @ 25 V - 218W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDP708AE

NDP708AE

60A, 80V, 0.022OHM, N-CHANNEL MO

Fairchild Semiconductor
3,240 -

RFQ

NDP708AE

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDB9403L-F085

FDB9403L-F085

MOSFET N-CH 40V 110A D2PAK

Fairchild Semiconductor
3,408 -

RFQ

FDB9403L-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.2mOhm @ 80A, 10V 3V @ 250µA 245 nC @ 10 V ±20V 13500 pF @ 20 V - 333W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDP039N08B

FDP039N08B

N-CHANNEL POWERTRENCH MOSFET 80V

Fairchild Semiconductor
1,390 -

RFQ

FDP039N08B

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDP8440

FDP8440

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
18,984 -

RFQ

FDP8440

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.2mOhm @ 80A, 10V 3V @ 250µA 450 nC @ 10 V ±20V 24740 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH130N60

FCH130N60

MOSFET N-CH 600V 28A TO247-3

Fairchild Semiconductor
144 -

RFQ

FCH130N60

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 130mOhm @ 14A, 10V 3.5V @ 250µA 70 nC @ 10 V ±20V 3590 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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