Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BS270

BS270

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,764 -

RFQ

BS270

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Ta) 4.5V, 10V 2Ohm @ 500mA, 10V 2.5V @ 250µA - ±20V 50 pF @ 25 V - 625mW (Ta) -55°C ~ 150°C (TJ) Through Hole
IRFW634BTMFP001

IRFW634BTMFP001

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,992 -

RFQ

IRFW634BTMFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Ta) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 3.13W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP032N08

FDP032N08

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,750 -

RFQ

FDP032N08

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 3.2mOhm @ 75A, 10V 4.5V @ 250µA 220 nC @ 10 V ±20V 15160 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDMS5360L-F085

FDMS5360L-F085

FDMS5360 - N-CHANNEL POWERTRENCH

Fairchild Semiconductor
2,669 -

RFQ

FDMS5360L-F085

Ficha técnica

Bulk Automotive, AEC-Q101, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 8.5mOhm @ 60A, 10V 3V @ 250µA 72 nC @ 10 V ±20V 3695 pF @ 30 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS0310AS

FDMS0310AS

N-CHANNEL POWERTRENCH SYNCFET 30

Fairchild Semiconductor
3,578 -

RFQ

FDMS0310AS

Ficha técnica

Bulk PowerTrench®, SyncFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 22A (Tc) 4.5V, 10V 4.3mOhm @ 19A, 10V 3V @ 1mA 37 nC @ 10 V ±20V 2280 pF @ 15 V - 2.5W (Ta), 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDD5N50UTM

FDD5N50UTM

3A, 500V, 2OHM, N-CHANNEL MOSFET

Fairchild Semiconductor
3,015 -

RFQ

FDD5N50UTM

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FDMS5362LF085

FDMS5362LF085

N-CHANNEL POWER TRENCH MOSFET

Fairchild Semiconductor
2,964 -

RFQ

FDMS5362LF085

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17.6A (Tc) 4.5V, 10V 33mOhm @ 17.6A, 10V 3V @ 250µA 21 nC @ 10 V ±20V 878 pF @ 25 V - 41.7W (Tj) -55°C ~ 175°C (TJ) Surface Mount
RFD14N05SM9A

RFD14N05SM9A

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,640 -

RFQ

RFD14N05SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 14A (Tc) 10V 100mOhm @ 14A, 10V 4V @ 250µA 40 nC @ 20 V ±20V 570 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI3457DV

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,031 -

RFQ

SI3457DV

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 4A (Ta) 4.5V, 10V 50mOhm @ 4A, 10V 3V @ 250µA 8.1 nC @ 5 V ±25V 470 pF @ 25 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS8449

FDS8449

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,423 -

RFQ

FDS8449

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 7.6A (Ta) 4.5V, 10V 29mOhm @ 7.6A, 10V 3V @ 250µA 11 nC @ 5 V ±20V 760 pF @ 20 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMA7672

FDMA7672

MOSFET N-CH 30V 9A 6MICROFET

Fairchild Semiconductor
2,821 -

RFQ

FDMA7672

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 21mOhm @ 9A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 760 pF @ 15 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP24N08

FQP24N08

MOSFET N-CH 80V 24A TO220-3

Fairchild Semiconductor
2,153 -

RFQ

FQP24N08

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 80 V 24A (Tc) 10V 60mOhm @ 12A, 10V 4V @ 250µA 25 nC @ 10 V ±25V 750 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76423P3

HUF76423P3

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
3,456 -

RFQ

HUF76423P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) Through Hole
HRF3205F102

HRF3205F102

N-CHANNEL POWER MOSFET, 100A, 55

Fairchild Semiconductor
2,011 -

RFQ

HRF3205F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQP9N50C

FQP9N50C

MOSFET N-CH 500V 9A TO220-3

Fairchild Semiconductor
2,699 -

RFQ

FQP9N50C

Ficha técnica

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 9A (Tc) 10V 800mOhm @ 4.5A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1030 pF @ 25 V - 135W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD3672-F085

FDD3672-F085

FDD3672 - N-CHANNEL ULTRAFET TRE

Fairchild Semiconductor
2,644 -

RFQ

FDD3672-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) 6V, 10V 47mOhm @ 21A, 6V 4V @ 250µA 36 nC @ 10 V ±20V 1635 pF @ 25 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQP17P06

FQP17P06

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
3,967 -

RFQ

FQP17P06

Ficha técnica

Bulk QFET® Active P-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) 10V 120mOhm @ 8.5A, 10V 4V @ 250µA 27 nC @ 10 V ±25V 900 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB19N20TM

FQB19N20TM

MOSFET N-CH 200V 19.4A D2PAK

Fairchild Semiconductor
3,828 -

RFQ

FQB19N20TM

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 200 V 19.4A (Tc) 10V 150mOhm @ 9.7A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1600 pF @ 25 V - 3.13W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP125N60E

FCP125N60E

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,787 -

RFQ

FCP125N60E

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 14.5A, 10V 3.5V @ 250µA 95 nC @ 10 V ±20V 2990 pF @ 380 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD16AN08A0

FDD16AN08A0

POWER FIELD-EFFECT TRANSISTOR, 9

Fairchild Semiconductor
2,836 -

RFQ

FDD16AN08A0

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 9A (Ta), 50A (Tc) 6V, 10V 16mOhm @ 50A, 10V 4V @ 250µA 47 nC @ 10 V ±20V 1874 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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