Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FCD3400N80Z

FCD3400N80Z

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
2,191 -

RFQ

FCD3400N80Z

Ficha técnica

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 800 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4.5V @ 200µA 9.6 nC @ 10 V ±20V 400 pF @ 100 V - 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCD620N60ZF

FCD620N60ZF

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
3,882 -

RFQ

FCD620N60ZF

Ficha técnica

Bulk HiPerFET™, Polar™ Active N-Channel MOSFET (Metal Oxide) 600 V 7.3A (Tc) 10V 620mOhm @ 3.6A, 10V 5V @ 250µA 36 nC @ 10 V ±20V 1135 pF @ 25 V - 89W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6682

FDS6682

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,835 -

RFQ

FDS6682

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 7.5mOhm @ 14A, 10V 3V @ 250µA 31 nC @ 5 V ±20V 2310 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS7682

FDMS7682

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor
2,531 -

RFQ

FDMS7682

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 16A (Ta), 22A (Tc) 4.5V, 10V 6.3mOhm @ 14A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 1885 pF @ 15 V - 2.5W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDN338P

FDN338P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,149 -

RFQ

FDN338P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 1.6A (Ta) 2.5V, 4.5V 115mOhm @ 1.6A, 4.5V 1.5V @ 250µA 6.2 nC @ 4.5 V ±8V 451 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDN352AP

FDN352AP

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,797 -

RFQ

FDN352AP

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.3A (Ta) 4.5V, 10V 180mOhm @ 1.3A, 10V 2.5V @ 250µA 1.9 nC @ 4.5 V ±25V 150 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDN340P

FDN340P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,571 -

RFQ

FDN340P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 2.5V, 4.5V 70mOhm @ 2A, 4.5V 1.5V @ 250µA 10 nC @ 4.5 V ±8V 779 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMC7660DC

FDMC7660DC

POWER FIELD-EFFECT TRANSISTOR, 3

Fairchild Semiconductor
2,774 -

RFQ

FDMC7660DC

Ficha técnica

Bulk Dual Cool™, PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 40A (Tc) 4.5V, 10V 2.2mOhm @ 22A, 10V 2.5V @ 250µA 76 nC @ 10 V ±20V 5170 pF @ 15 V - 3W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FQP85N06

FQP85N06

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,140 -

RFQ

FQP85N06

Ficha técnica

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 60 V 85A (Tc) 10V 10mOhm @ 42.5A, 10V 4V @ 250µA 112 nC @ 10 V ±25V 4120 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP5800

FDP5800

POWER FIELD-EFFECT TRANSISTOR, 8

Fairchild Semiconductor
2,403 -

RFQ

FDP5800

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 80A (Tc) 4.5V, 10V 6mOhm @ 80A, 10V 2.5V @ 250µA 145 nC @ 10 V ±20V 9160 pF @ 15 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD6296

FDD6296

MOSFET N-CH 30V 15A/50A DPAK

Fairchild Semiconductor
2,401 -

RFQ

FDD6296

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 50A (Tc) 4.5V, 10V 8.8mOhm @ 15A, 10V 3V @ 250µA 31.5 nC @ 10 V ±20V 1440 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDFM2P110

FDFM2P110

MOSFET P-CH 20V 3.5A MICROFET

Fairchild Semiconductor
2,041 -

RFQ

FDFM2P110

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 2.5V, 4.5V 140mOhm @ 3.5A, 4.5V 1.5V @ 250µA 4 nC @ 4.5 V ±12V 280 pF @ 10 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS610BFP001

IRFS610BFP001

POWER FIELD-EFFECT TRANSISTOR, N

Fairchild Semiconductor
3,463 -

RFQ

IRFS610BFP001

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tj) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK4066-DL-1EX

2SK4066-DL-1EX

2SK4066 - N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,965 -

RFQ

2SK4066-DL-1EX

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 100A (Ta) - 4.7mOhm @ 50A, 10V - 220 nC @ 10 V - 12500 pF @ 20 V - 1.65W (Ta), 90W (Tc) 150°C (TJ) Surface Mount
HUF75645P3

HUF75645P3

POWER FIELD-EFFECT TRANSISTOR, 7

Fairchild Semiconductor
2,231 -

RFQ

HUF75645P3

Ficha técnica

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDG316P

FDG316P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,686 -

RFQ

FDG316P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 190mOhm @ 1.6A, 10V 3V @ 250µA 5 nC @ 10 V ±20V 165 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS2572

FDS2572

POWER FIELD-EFFECT TRANSISTOR, 4

Fairchild Semiconductor
2,981 -

RFQ

FDS2572

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.9A (Tc) 10V 47mOhm @ 4.9A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 2870 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP40N10_F102

RFP40N10_F102

40A, 100V, 0.04OHM, N-CHANNEL PO

Fairchild Semiconductor
2,030 -

RFQ

RFP40N10_F102

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 40mOhm @ 40A, 10V 4V @ 250µA 300 nC @ 20 V ±20V - - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
NTD24N06LT4G

NTD24N06LT4G

POWER FIELD-EFFECT TRANSISTOR, 2

Fairchild Semiconductor
3,949 -

RFQ

NTD24N06LT4G

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 24A (Ta) 5V 45mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 1140 pF @ 25 V - 1.36W (Ta), 62.5W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDV302P

FDV302P

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,445 -

RFQ

FDV302P

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 25 V 120mA (Ta) 2.7V, 4.5V 10Ohm @ 200mA, 4.5V 1.5V @ 250µA 0.31 nC @ 4.5 V -8V 11000 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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